Development of High Resolution Beam-Profile Monitor for GeV Photon Beam
Development of High Resolution Beam-Profile Monitor for GeV Photon Beam
批准号:
09640358
负责人:
NAKANO Takashi
金额:
$1.79万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998
中文摘要
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英文摘要
The GeV photon beam at Spring-8 is produced by backward-Compton scattering of laser photons from 8 GeV electrons. The energy of the photon beam is in the range of 2 〜 4 GeV are obtained by scatterings of 4 〜 6 eV laser photons. The aim of this research is to develop a high resolution beam profile monitor which is essential for the commissioning of the GeV photon beam.In the fiscal year of 1997, we developed prototypes of the Silicon-Strip Detectors (SSD). Three SSDs with different thickness were tested with a 400 MeV proton beam as well as with β rays from 90Sr. The study showed the 300 μm-thick would be best for the purpose. In the following year, a 512-ch SSD was constructed based on the result. A repeater card for a high-speed readout system of the SSD was also developed and tested successfully.The beam profile monitor developed by this research will be used for the commissioning of GeV photon beam at SPring8 in May, 1999.
期刊论文(3)
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会议论文
T.Hotta et al.: "Studies of 100μm-thick silicon strip detector with analog VLSI readout" Nucl.Instr.Meth.A. (発表予定). (1998)
T.Hotta 等人:“具有模拟 VLSI 读数的 100μm 厚硅条检测器的研究”Nucl.Instr.Meth.A(待提交)。
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通讯作者:
T.Hotta et al.: "Studies of 100 μm-thick silicon strip detector with analog VLSI"Nucl. Instr. Meth. A. (発売予定). (1999)
T.Hotta 等人:“使用模拟 VLSI 的 100 μm 厚硅条检测器的研究”Nucl. A.(待发布)。
DOI:
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发表时间:
期刊:
影响因子:
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作者:
[]
通讯作者:
T. Hotta el al.: "Studies of 100 μm-thick silicon strip detector with analog VLSI"Nucl. Instr. Meth. A. (1999)
T. Hotta 等人:“使用模拟 VLSI 的 100 μm 厚硅条检测器的研究”Nucl A. (1999)
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发表时间:
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Supply Platform of Short-lived Radioisotopes
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