Development of sputter deposition method to control microstructure of thin film magnetic recording media with ultra high density.

开发溅射沉积方法来控制超高密度薄膜磁记录介质的微观结构。

• 批准号: 10650320
• 负责人: HOSHI Yoichi
• 金额: $ 2.24万
• 依托单位: Tokyo Institute of Polytechnics
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650320/
• 关键词: supptered thin films; BaM film; microstructure of film; low voltage sputtering; Deposition at liquid nitrogen temperature; sputter beam deposition; 液体窒素温度堆積; スパッタ; 低エネルギースパッタ

In order to control microstructure of sputtered thin films to use for ultra-high density magnetic recording, we proposed four types of new sputter deposition methods, (1)alternate periodic layer deposition method, (2)low voltage sputtering (3)sputter deposition method at liquid nitrogen temperature, and (4)sputter beam deposition method. In this research project, we tried to clarify the effectiveness of these new deposition methods to obtain a film with desired microstructure and following results were obtained :(1) Alternate periodic layer deposition method for the formation of hexagonal BaM films.Compared with conventional sputter deposition method, it became clear that alternate periodic deposition technique of S layer and R layer is useful to obtain a hexagonal BaM films at low temperature with excellent c-axis orientation.(2) Low voltage sputtering by means of rf-dc coupled sputtering.Sputtering at a voltage as low as 100 V is effective to suppress the bombardment of film surface during deposition by high energy oxygen atoms and obtain oxide films with good quality.(3) Sputter deposition at liquid nitrogen temperature.Sputter deposition at liquid nitrogen temperature was found to be For the sputter deposition of metal films such as Fe, Co and Ni on a substrate which is cooled to liquid nitrogen temperature.(4) Sputter beam deposition method.We proposed a new sputter deposition system which can control both kinetic energy and incident angles of deposition particles and confirmed that this new deposition method is useful to control crystal orientation and microstructure in the deposition of Ti films.

为了控制用于超高密度磁记录的溅射薄膜的微观结构，我们提出了四种新的溅射沉积方法，（1）交替周期层沉积方法，（2）低压溅射（3）液氮温度下的溅射沉积方法，和（4）溅射束沉积方法。在本研究项目中，我们试图阐明这些新的沉积方法在获得具有所需微结构的薄膜方面的有效性，并获得了以下结果：（1）交替周期层沉积法制备六方BaM薄膜，与传统的溅射沉积法相比，S层和R层交替周期层沉积技术可以在低温下获得具有良好c轴取向的六方BaM薄膜。(2)采用射频-直流耦合溅射的低电压溅射方法，在100 V的低电压下溅射，可以有效地抑制沉积过程中高能氧原子对膜表面的轰击，获得质量较好的氧化膜。(3)液氮温度下的溅射沉积被发现是用于在冷却到液氮温度的衬底上溅射沉积诸如Fe、Co和Ni的金属膜。(4)提出了一种新的溅射沉积系统，该系统可以同时控制沉积粒子的动能和入射角，并证实了这种新的沉积方法对控制Ti薄膜的晶体取向和微观结构是有用的。

项目成果

H.Shimizu, H.Shinozaki, Y.Hoshi, K.Kato, F.Kaneko: "Deposition of c-axis oriented Ba-ferrite ultra-thin films by the alternate layer deposition method."J.Magn.Soc.Japan. 23,(42), in Japanese. 1209-1212 (1999)

H.Shimizu、H.Shinozaki、Y.Hoshi、K.Kato、F.Kaneko：“通过交替层沉积法沉积 c 轴取向的 Ba 铁氧体超薄膜。”J.Magn.Soc.Japan。

Y.Hoshi and R.Ohki: "Low energy rf sputtering system for the deposition of LTO thin films."Electrochemica Acta. 44. 3927-3932 (1999)

Y.Hoshi 和 R.Ohki：“用于沉积 LTO 薄膜的低能射频溅射系统。”电化学学报。

Y.Hoshi,E.Suzuki,H.Shimizu: "Control of crystal orientation of Ti thin films by sputtering" Electrochemica Acta. (掲載予定). (1999)

Y.Hoshi、E.Suzuki、H.Shimizu：“通过溅射控制 Ti 薄膜的晶体取向”（即将出版）。

H.Shimizu, E.Suzuki, Y.Hoshi: "Crystal structure and microstructure of nickel film deposited at liquid nitrogen temperature by sputtering."Electrochemica Acta. 44. 3933-3944 (1999)

H.Shimizu、E.Suzuki、Y.Hoshi：“液氮温度下溅射沉积的镍薄膜的晶体结构和微观结构。”电化学学报。

H.Shimizu,E.Suzuki,Y.Hoshi: "Crystal structure and microstructure of nickel film deposited at liquid nitrogen temperature by sputtering"Electrochinica Acta. 44. 3933-3944 (1999)

H.Shimizu，E.Suzuki，Y.Hoshi：“液氮温度下溅射沉积的镍薄膜的晶体结构和微观结构”《电工学报》。