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Development of sputter deposition method to control microstructure of thin film magnetic recording media with ultra high density.

Development of sputter deposition method to control microstructure of thin film magnetic recording media with ultra high density.
开发溅射沉积方法来控制超高密度薄膜磁记录介质的微观结构。
批准号:
10650320
负责人:
HOSHI Yoichi
金额:
$2.24万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 1999

项目摘要

项目成果

HOSHI Yoichi的其他基金

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中文摘要
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英文摘要
In order to control microstructure of sputtered thin films to use for ultra-high density magnetic recording, we proposed four types of new sputter deposition methods, (1)alternate periodic layer deposition method, (2)low voltage sputtering (3)sputter deposition method at liquid nitrogen temperature, and (4)sputter beam deposition method. In this research project, we tried to clarify the effectiveness of these new deposition methods to obtain a film with desired microstructure and following results were obtained :(1) Alternate periodic layer deposition method for the formation of hexagonal BaM films.Compared with conventional sputter deposition method, it became clear that alternate periodic deposition technique of S layer and R layer is useful to obtain a hexagonal BaM films at low temperature with excellent c-axis orientation.(2) Low voltage sputtering by means of rf-dc coupled sputtering.Sputtering at a voltage as low as 100 V is effective to suppress the bombardment of film surface during deposition by high energy oxygen atoms and obtain oxide films with good quality.(3) Sputter deposition at liquid nitrogen temperature.Sputter deposition at liquid nitrogen temperature was found to be For the sputter deposition of metal films such as Fe, Co and Ni on a substrate which is cooled to liquid nitrogen temperature.(4) Sputter beam deposition method.We proposed a new sputter deposition system which can control both kinetic energy and incident angles of deposition particles and confirmed that this new deposition method is useful to control crystal orientation and microstructure in the deposition of Ti films.
期刊论文(28)
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会议论文
H.Shimizu, H.Shinozaki, Y.Hoshi, K.Kato, F.Kaneko: "Deposition of c-axis oriented Ba-ferrite ultra-thin films by the alternate layer deposition method."J.Magn.Soc.Japan. 23,(42), in Japanese. 1209-1212 (1999)
H.Shimizu、H.Shinozaki、Y.Hoshi、K.Kato、F.Kaneko:“通过交替层沉积法沉积 c 轴取向的 Ba 铁氧体超薄膜。”J.Magn.Soc.Japan。
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通讯作者:
Y.Hoshi and R.Ohki: "Low energy rf sputtering system for the deposition of LTO thin films."Electrochemica Acta. 44. 3927-3932 (1999)
Y.Hoshi 和 R.Ohki:“用于沉积 LTO 薄膜的低能射频溅射系统。”电化学学报。
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通讯作者:
Y.Hoshi,E.Suzuki,H.Shimizu: "Control of crystal orientation of Ti thin films by sputtering" Electrochemica Acta. (掲載予定). (1999)
Y.Hoshi、E.Suzuki、H.Shimizu:“通过溅射控制 Ti 薄膜的晶体取向”(即将出版)。
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H.Shimizu, E.Suzuki, Y.Hoshi: "Crystal structure and microstructure of nickel film deposited at liquid nitrogen temperature by sputtering."Electrochemica Acta. 44. 3933-3944 (1999)
H.Shimizu、E.Suzuki、Y.Hoshi:“液氮温度下溅射沉积的镍薄膜的晶体结构和微观结构。”电化学学报。
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27
    Development of high rate glancing angle deposition techniques with oxygen radical source for the fabrication of titanium oxide films with excellent photo-catalytic properties
    • 批准号:
      15K04682
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.16万
    • 财政年份:
      2015
    • 负责人:
      HOSHI Yoichi
    • 依托单位:
    Development of high rate and low temperature sputter-deposition method for the fabrication of oxide films on organic substrate
    • 批准号:
      20560309
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.16万
    • 财政年份:
      2008
    • 负责人:
      HOSHI Yoichi
    • 依托单位:
    Development of high rate sputtering system for the deposition of transparent conductive thin films with low resistivity and high adhesion on plastic film substrate.
    • 批准号:
      16560281
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.37万
    • 财政年份:
      2004
    • 负责人:
      HOSHI Yoichi
    • 依托单位:
    Development of soft magnetic thin films with large saturation magnetization for magnetic recording head by sputter-deposition at liquid nitrogen temperature
    • 批准号:
      13650357
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $0.64万
    • 财政年份:
      2001
    • 负责人:
      HOSHI Yoichi
    • 依托单位: