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Deposition of Iron Nitride Soft Magnetic Thin Films with Giant Saturation Magnetization by Sputtering type Plasma Source

溅射式等离子体源沉积大饱和磁化氮化铁软磁薄膜

基本信息

批准号：
02650229
负责人：
HOSHI Yoichi
金额：
$ 1.41万
依托单位：
Tokyo Institute of Polytechnics
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1990
资助国家：
日本
起止时间：
1990 至 1991
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02650229/
关键词：
Iron nitride thin film Ion beam deposition Facing target sputtering Sputtering type plasma source Soft magnetic thin films 対向タ-ゲット式スパッタ法イオンビ-ムデポジッションプラズマ多層膜薄膜ヘッド対向タ-ゲット式スパッタ軟磁性薄膜プラズマ源

项目摘要

In this research, deposition of iron nitride thin films with large saturation magnetization was attempted by means of a sputtering type plasma source. The sputtering type plasma source has a facing target type high rate sputtering source, and ions extracted from the plasma source can be deposited directly on the substrate, although some amounts of neutral atoms are also deposited on the substrate.Improvement of the plasma source was achieved by changing the ion extraction method from multi-holes to single extraction hole method, and by an increase of the strength of the plasma confinement magnetic field. As a result, the films can be deposited at an incident ion density as high as 1 mA/cm^2, and the life of the target could be prolonged by more than one order.The iron nitride films were deposited at various incident ion energies. The amount of ion incident to the substrate during deposition was also changed. Following results are obtained.(1)The incidence of ions with large kinetic ene … More rgy suppresses the crystal growth in the film. The nitrogen content in the film also decreases as the incident ion energy increases. These iron nitride films deposited at large ion energy has excellent soft magnetic properties (saturation magnetization : 2.0-2.2 T, coercive force : <1.0 Oe).(2)Nitrogen content in the film can be controlled by adjusting the nitrogen partial gas pressure and the bias voltage of the substrate. However, the film with Fe_<16>N_2 single phase that has a large saturation magnetization above 2.8 T could not be obtained on glass slide substrate in this research.(3)A decrease in the amount of ion incident to the substrate promotes a crystal growth in the film. This result suggests that the ions incident to the substrate increase the density of nucleation sites, which results in the suppression of the crystal growth in the film.In this research, it can be clarified that the control of the amount and energy of the incident ions to the substrate is very important to obtain the iron nitride films with desired properties. However, the deposition condition to obtain the Fe_<16>N_2 single phase film is still unclear. Less

本研究尝试以溅镀式电浆源来沉积具有大饱和磁化强度之氮化铁薄膜。溅射型等离子体源具有对靶型高速溅射源，从等离子体源引出的离子可以直接沉积在衬底上，但也有一定量的中性原子沉积在衬底上。通过将离子引出方法从多孔法改为单孔法，以及通过增加等离子体约束磁场的强度。结果表明，当入射离子密度高达1 mA/cm^2时，可以沉积出氮化铁薄膜，并且可以使靶材的寿命提高一个数量级以上。在沉积期间入射到衬底的离子的量也改变。获得了以下结果。（1）具有大动能的离子入射 ...更多信息 RGY抑制膜中的晶体生长。薄膜中的氮含量也随着入射离子能量的增加而降低。这些在大离子能量下沉积的氮化铁薄膜具有优异的软磁性能（饱和磁化强度：2.0- 2.2T，矫顽力：<1.0Oe）。（2）膜中的氮含量可以通过调节氮分压和衬底的偏压来控制。但<16>在本研究中，在载玻片基底上没有得到饱和磁化强度大于2.8T的单相Fe_ N_2薄膜。(3)A入射到衬底的离子量的减少促进了膜中的晶体生长。这一结果表明，入射到衬底上的离子增加了铁氮化物薄膜的成核密度，从而抑制了薄膜中的晶体生长，因此，控制入射到衬底上的离子的数量和能量对于获得具有所需性能的铁氮化物薄膜是非常重要的。但是，获得Fe_ N_2单相薄膜的沉积条件<16>还不清楚。少