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Deposition of Iron Nitride Soft Magnetic Thin Films with Giant Saturation Magnetization by Sputtering type Plasma Source

Deposition of Iron Nitride Soft Magnetic Thin Films with Giant Saturation Magnetization by Sputtering type Plasma Source
溅射式等离子体源沉积大饱和磁化氮化铁软磁薄膜
批准号:
02650229
负责人:
HOSHI Yoichi
金额:
$1.41万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1990
资助国家:
日本
项目状态:
已结题
起止时间:
1990 至 1991

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中文摘要
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英文摘要
In this research, deposition of iron nitride thin films with large saturation magnetization was attempted by means of a sputtering type plasma source. The sputtering type plasma source has a facing target type high rate sputtering source, and ions extracted from the plasma source can be deposited directly on the substrate, although some amounts of neutral atoms are also deposited on the substrate.Improvement of the plasma source was achieved by changing the ion extraction method from multi-holes to single extraction hole method, and by an increase of the strength of the plasma confinement magnetic field. As a result, the films can be deposited at an incident ion density as high as 1 mA/cm^2, and the life of the target could be prolonged by more than one order.The iron nitride films were deposited at various incident ion energies. The amount of ion incident to the substrate during deposition was also changed. Following results are obtained.(1)The incidence of ions with large kinetic ene … More rgy suppresses the crystal growth in the film. The nitrogen content in the film also decreases as the incident ion energy increases. These iron nitride films deposited at large ion energy has excellent soft magnetic properties (saturation magnetization : 2.0-2.2 T, coercive force : <1.0 Oe).(2)Nitrogen content in the film can be controlled by adjusting the nitrogen partial gas pressure and the bias voltage of the substrate. However, the film with Fe_<16>N_2 single phase that has a large saturation magnetization above 2.8 T could not be obtained on glass slide substrate in this research.(3)A decrease in the amount of ion incident to the substrate promotes a crystal growth in the film. This result suggests that the ions incident to the substrate increase the density of nucleation sites, which results in the suppression of the crystal growth in the film.In this research, it can be clarified that the control of the amount and energy of the incident ions to the substrate is very important to obtain the iron nitride films with desired properties. However, the deposition condition to obtain the Fe_<16>N_2 single phase film is still unclear. Less
期刊论文(11)
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会议论文
Y.Hoshi, D.E.Speliotis and J.H.Judy: "Annealing synthesis of Ba ferrite thin films deposited by facing target sputtering" Proceedings of the 6th International Conference on Ferrites. (1992)
Y.Hoshi、D.E.Speliotis 和 J.H.Judy:“通过面对靶溅射沉积的 Ba 铁氧体薄膜的退火合成”第六届国际铁氧体会议论文集。
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Y.Hoshi, T.Tezuka, and M.Naoe: "Angular distribution of particles sputtered from multicomponent oxide target" Proceedings of the 6th International Conference on Ferrites. (1992)
Y.Hoshi、T.Tezuka 和 M.Naoe:“多组分氧化物靶溅射粒子的角分布”第六届国际铁氧体会议论文集。
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通讯作者:
Y.Hoshi and M.Naoe: "Suppression of crystal growth by the addition of Zr, Nb, Mo, and Ta in Fe-N/Si-N multilayer films" Proceedings of the 6th International Conference on Ferrites. (1992)
Y.Hoshi 和 M.Naoe:“在 Fe-N/Si-N 多层膜中添加 Zr、Nb、Mo 和 Ta 来抑制晶体生长”第六届国际铁氧体会议论文集。
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通讯作者:
Y.Hoshi and M.Naoe: "magnetic properties of Fe-N/Si-N multilayer films deposited by an opposed targets sputtering" IEEE Trans.Mag. Vol.26, No.5. 2344-2346 (1990)
Y.Hoshi 和 M.Naoe:“通过对置靶溅射沉积的 Fe-N/Si-N 多层薄膜的磁性”IEEE Trans.Mag。
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11
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    • 批准号:
      15K04682
    • 项目类别:
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    • 资助金额:
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    • 财政年份:
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    • 依托单位:
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    • 批准号:
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    • 项目类别:
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    • 资助金额:
      $3.16万
    • 财政年份:
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    • 依托单位:
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    • 批准号:
      16560281
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.37万
    • 财政年份:
      2004
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    • 依托单位:
    Development of soft magnetic thin films with large saturation magnetization for magnetic recording head by sputter-deposition at liquid nitrogen temperature
    • 批准号:
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    • 项目类别:
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    • 资助金额:
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    • 财政年份:
      2001
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    • 依托单位:
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