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Development of high rate and low temperature sputter-deposition method for the fabrication of oxide films on organic substrate

开发在有机基底上制备氧化膜的高速低温溅射沉积方法

基本信息

批准号：
20560309
负责人：
HOSHI Yoichi
金额：
$ 3.16万
依托单位：
Tokyo Polytechnic University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2008
资助国家：
日本
起止时间：
2008 至 2010
项目状态：
已结题

项目摘要

In this study, we tried to clarify the mechanisms of the damages induced in the organic films(BAlq film) by the sputter-deposition of electrode TCO films, and developed a new damage-less sputter-deposition method for the formation of the electrode films in OLED. Results are summarized as follows;1) Irradiation of high energy electrons and ions to the BAlq film above energy of 50 eV induced significant reduction of PL intensity of the films. This indicates that suppression of such high energy particle bombardment to the organic film surface during sputter-deposition is necessary to reduce the degradation of light emitting properties of the organic film.2) It was confirmed that deposition of the electrode films by using a facing target sputtering(FTS) method instead of conventional magnetron sputtering was effective to reduce the damages in the organic films. But, it was found that small amount of high energy secondary electrons emitted from the end of the cathode target can arrive at the substrate surface in the FTS, and leads to a significant reduction of PL intensity of the organic film. Therefore, we achieved complete suppression of such high energy electron bombardment by the insertion of Al plate near the target electrode. In addition, reduction of the kinetic energy of the sputtered particles arrived at the substrate surface by increase in sputtering gas pressure above 8 mTorr, and/or use of Kr gas instead of Ar gas was effective to reduce the damages in the organic film.Finally, we succeeded to develop a sputtering system in which incidence of secondary electrons and high energy sputtered particles to the substrate surface are completely suppressed during film deposition. As a result, sputter-deposition of the electrode films without reduction of PL intensity was successfully realized. Currently, we have been trying to make organic EL devices by using this new sputter-deposition process to confirm its usefulness in the EL device.

本研究试图阐明有机薄膜（BAlq薄膜）中的电极TCO膜的化学沉积引起的损伤的机理，并开发出一种新的无损伤的化学沉积方法用于OLED电极膜的形成。结果如下：1）高能电子和离子辐照BAlq薄膜，在50 eV以上的能量下，薄膜的PL强度显著降低。这表明在磁控管沉积期间抑制这种高能粒子轰击有机膜表面对于减少有机膜的发光性能的劣化是必要的。2）证实了通过使用对向靶溅射（FTS）方法代替常规磁控管溅射沉积电极膜对于减少有机膜中的损伤是有效的。但是，在FTS中，阴极靶末端发射的少量高能二次电子可以到达衬底表面，导致有机薄膜的PL强度显著降低。因此，我们通过在靶电极附近插入Al板实现了对这种高能电子轰击的完全抑制。此外，通过将溅射气体压力增加到8毫托以上和/或使用Kr气体代替Ar气体来减少到达基板表面的溅射粒子的动能，对于减少有机膜中的损伤是有效的。我们成功地开发了一种溅射系统，在该溅射系统中，在成膜过程中完全抑制了二次电子和高能溅射粒子入射到衬底表面。证词结果，成功地实现了电极膜的沉积而不降低PL强度。目前，我们一直试图通过使用这种新的电致发光沉积工艺来制造有机EL器件，以确认其在EL器件中的有用性。