Development of high rate sputtering system for the deposition of transparent conductive thin films with low resistivity and high adhesion on plastic film substrate.
开发高速率溅射系统,用于在塑料薄膜基材上沉积低电阻率和高附着力的透明导电薄膜。
基本信息
- 批准号:16560281
- 负责人:
- 金额:$ 2.37万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2004
- 资助国家:日本
- 起止时间:2004 至 2005
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In this study, damage-less sputter-deposition method with high deposition rate have been developed for the deposition of transparent conductive thin films with low resistivity on a plastic substrate.1)The substrate heating during sputter-deposition was mainly caused by the incidence of electrons from the plasma in both magnetron sputtering and facing target sputtering. Incidence of high energy secondary electrons emitted from the target surface was one of the other sources for the substrate heating. Compared with the magnetron sputtering system, the amount of the incident heating energy was much lower in facing target sputtering system, since the substrate was kept in a plasma free condition.2)The suppression of crystal growth was necessary to obtain a film with excellent surface smoothness. The addition of small amount of Zn into ITO was effective to suppress the crystal growth of the film. The suppression of crystal growth was also effective to reduce the compressive film stress and stress free films can be realized at a proper sputtering gas pressure around 8 m Torr.3)We showed that pulse sputtering of dual cathodes with opposed target arrangement was useful to realize a stable high rate sputtering of oxide film in a dc mode, and bombardment of substrate surface by charged particles in plasma can be suppressed by keeping the anode potential at earth potential. We also showed that combination of facing targets sputtering source and magnetron source works effectively as a dual sputtering system.4)We found that the electrical properties of the ITO films changes significantly with substrate position, and clarified that this non-uniformity of the film is mainly caused by the differences in the distribution of emission angles between oxygen atoms and In atoms from the target surface.
1)磁控溅射和对向靶溅射中,衬底加热主要是由等离子体电子入射引起的。从靶表面发射的高能二次电子的入射是衬底加热的另一个来源。与磁控溅射系统相比,对向靶溅射系统的入射加热能量要低得多,因为衬底处于无等离子体状态。2)抑制晶体生长是获得具有良好表面平整度的薄膜所必需的。在ITO中加入少量的锌可以有效地抑制薄膜的晶体生长。抑制晶体生长也有效地降低了薄膜的压应力,当溅射气体气压在8m Torr左右时,可以实现薄膜的无应力。3)研究表明,采用靶排列相反的双阴极脉冲溅射有利于实现直流模式下氧化物薄膜的稳定高速溅射,并通过将阳极电位保持在地电位来抑制等离子体中带电粒子对衬底表面的轰击。4)我们发现ITO薄膜的电学性质随衬底位置的不同而发生明显的变化,并阐明这种不均匀主要是由于氧原子和In原子之间的发射角分布与靶表面的不同造成的。
项目成果
期刊论文数量(18)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Electrical properties of indium-tin oxide films deposited on nonheated substarte using a planar-magnetron sputtering system and a facing target sputtering systems.
使用平面磁控溅射系统和面对靶溅射系统沉积在非加热基板上的氧化铟锡薄膜的电性能。
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:Hideo Iwase;Youichi Hoshi;Makoto Kameyama
- 通讯作者:Makoto Kameyama
Electrical properties of indium-tin oxide films deposited on nonheated substarte using a palanar-magnetron sputtering system and a facing target sputtering system
使用平面磁控溅射系统和面对靶溅射系统在非加热基板上沉积的氧化铟锡薄膜的电性能
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:Hideo Iwase;Youichi Hoshi;Makoto Kameyama
- 通讯作者:Makoto Kameyama
Low temperature deposition of ITO thin films by low voltage sputtering in various rare gases
各种稀有气体中低压溅射低温沉积ITO薄膜
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:Y.Hoshi;H.Shimizu
- 通讯作者:H.Shimizu
Suppression of substrate heating in the sputter-deposition of ITO films.
ITO 薄膜溅射沉积中基板加热的抑制。
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:Hideo Iwase;Youichi Hoshi;Makoto Kameyama
- 通讯作者:Makoto Kameyama
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HOSHI Yoichi其他文献
HOSHI Yoichi的其他文献
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{{ truncateString('HOSHI Yoichi', 18)}}的其他基金
Development of high rate glancing angle deposition techniques with oxygen radical source for the fabrication of titanium oxide films with excellent photo-catalytic properties
开发氧自由基源高速掠射角沉积技术,用于制备具有优异光催化性能的氧化钛薄膜
- 批准号:
15K04682 - 财政年份:2015
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of high rate and low temperature sputter-deposition method for the fabrication of oxide films on organic substrate
开发在有机基底上制备氧化膜的高速低温溅射沉积方法
- 批准号:
20560309 - 财政年份:2008
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of soft magnetic thin films with large saturation magnetization for magnetic recording head by sputter-deposition at liquid nitrogen temperature
液氮温度下溅射沉积磁记录头用大饱和磁化强度软磁薄膜的研制
- 批准号:
13650357 - 财政年份:2001
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of sputter deposition method to control microstructure of thin film magnetic recording media with ultra high density.
开发溅射沉积方法来控制超高密度薄膜磁记录介质的微观结构。
- 批准号:
10650320 - 财政年份:1998
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of hightly oriented and low noise barium ferrite thin film media for high density magnetic recording
用于高密度磁记录的高取向、低噪声钡铁氧体薄膜介质的开发
- 批准号:
06650374 - 财政年份:1994
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Deposition of Iron Nitride Films with Large Saturation Magnetization by Using a Sputtering Type Plasma Source.
使用溅射型等离子体源沉积具有大饱和磁化强度的氮化铁薄膜。
- 批准号:
04650272 - 财政年份:1992
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Deposition of Iron Nitride Soft Magnetic Thin Films with Giant Saturation Magnetization by Sputtering type Plasma Source
溅射式等离子体源沉积大饱和磁化氮化铁软磁薄膜
- 批准号:
02650229 - 财政年份:1990
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Development of Sputtering Type Large Current Ion Source and its Application for the Synthesis of Superconducting Oxide thin Films.
溅射式大电流离子源的研制及其在超导氧化物薄膜合成中的应用。
- 批准号:
01850065 - 财政年份:1989
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research
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Low temperature deposition of barrierless insulating film applicable to 3D and 2.5 D-IC
适用于3D和2.5D-IC的无阻挡绝缘薄膜的低温沉积
- 批准号:
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职业:超临界二氧化碳溶液低温沉积金属薄膜
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Low-Temperature Deposition of Dielectric Films Using Synchrotron Radiation-Assisted Gas-Source CVD
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