Global process analysis for thermal CVD reactor design

热 CVD 反应器设计的全局工艺分析

• 批准号: 10650749
• 负责人: SATO Tsuneyuki
• 金额: $ 2.3万
• 依托单位: KYUSHU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650749/
• 关键词: CVD; Simulation; Silicon; Film growth rate; Single wafer reactor; 熱流動; 枚葉型; シミュレーション; シリコンエピタキシー; 枚葉式

The purpose of this work is to develop and run a global process simulator for a thermal CVD reactor design, especially for a horizontal cold-wall single wafer Silicon epitaxial reactor, and to perform an experiment for the verification of the simulation results. In this year we focused on a Si epitaxy from Trichlorosilane-HィイD22ィエD2 reactants system, and analyzed numerically the fundamental phenomena encountered in the reactor as well as film deposition dynamics by means of a three dimensional numerical simulation code. The research results obtained are summarized as follows.(1) The decrease of Si film growth rate along the center line of the wafer is depressed remarkably by the relatively high inlet source gas concentration, because the dominant reaction in this system is obeyed by the Langmuir-Hinshelwood reaction mechanism which shows 0th order reaction rate in the range of high source gas concentration.(2) The local growth rate profiles on the wafer depend strongly on the fluid flow. The area where the rising flow is generated shows small growth rate, and the area where the down flow is generated large growth rate. This is caused by the difference of mass transfer rates to the depositing surface.

这项工作的目的是开发和运行一个全球性的热CVD反应器的设计，特别是水平冷壁单晶片硅外延反应器的工艺模拟器，并进行模拟结果的验证实验。在这一年中，我们专注于从三氯硅烷-H_（22）N_（22）D_2反应物体系中外延Si，并通过三维数值模拟程序数值分析了反应器中遇到的基本现象以及薄膜沉积动力学。所获得的研究结果总结如下。(1)较高的源气体浓度显著抑制了硅膜生长速率沿硅片中心线沿着方向的下降，这是因为在高源气体浓度范围内，系统中的主要反应遵循Langmuir-Hinshelwood反应机理，反应速率为零级。(2)晶片上的局部生长速率曲线强烈地依赖于流体流动。产生上升流的区域显示出小的增长率，而产生下降流的区域显示出大的增长率。这是由于到沉积表面的质量传递速率的差异引起的。

项目成果

K. Tanoue, H. Arima, S. Moriyama, T. Sato, N. Imaishi, T. Morita: "Gas Flow and Heat Transfer of a Horizontal Flow Channel Partially Heated from Below under Microgravity"Transactions of the Japan Society of Mechanical Engineers. 64(624)B. 2608-2613 (1998)

K. Tanoue、H. Arima、S. Moriyama、T. Sato、N. Imaishi、T. Morita：“微重力下从下方部分加热的水平流道的气体流动和传热”日本机械工程师学会汇刊

H. Arima ほか: "Transient behavior of gas flow and heat transfer in a horizontal flow channel locally heated from below under microgravity"J. Jpn. Soc. Microgravity Appl. 15. 458-453 (1998)

H. Arima 等人：“微重力下从下方局部加热的气体流动和传热的瞬态行为”Jpn. 15. 458-453 (1998)。

H. Arima, S. Moriyama, K. Tanoue, T. Sato, N. Imaishi, T.S.Morita, H. Kawasaki and H. Kato: "Transient behavior of Gas Flow and Heat Transfer in a Horizontal Flow Channel Locally Heated from Below under Microgrvity"J.Jpn. Soc. Microgrvity Appl.. 15. 448-4

H. Arima、S. Moriyama、K. Tanoue、T. Sato、N. Imaishi、T.S.Morita、H. Kawasaki 和 H. Kato：“从下方局部加热的水平流道中气体流动和传热的瞬态行为

田之上健一郎ほか: "微小重力下における下側加熱された矩形流路内の熱流動"日本機会学会論文集B. 64・624. 2608-2614 (1998)

Kenichiro Tanoue 等人：“微重力下底部加热矩形通道中的热流” 日本机械工程师学会汇刊 B. 64, 624. 2608-2614 (1998)