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EFFECT OF LIGHT IMPURITY ELEMENTS ON HYDROGEN TRANSPORT IN HIGH-Z PLASMA FACING MATERIALS

轻杂质元素对高 Z 等离子体表面材料中氢传输的影响

基本信息

批准号：
10680469
负责人：
NAGATA Shinji
金额：
$ 2.24万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10680469/
关键词：
molybdenum tungsten deuterium ion implantation carbon oxide layer thermal release helium 酸化物層ヘリウム照射水素

项目摘要

Retention and the thermal release of D atoms retained in near surface layers of Mo and W crystals were investigated by ion-beam analysis techniques in connection with influences of helium pre-implantation and light impurities such as carbon and oxygen in the surface layer.From the depth profile studies of the retained D atoms and the implantation induced disorder, it may be concluded that the trapping of the D atoms in Mo and W crystals is associated with lattice distortion caused by the implantation induced extended defects such as interstitial loops. This was consistent with the results of ion channeling experiments: D atoms implanted in the W crystal were located near the tetrahedral interstitial site and the lattice distortion may become stable due to the local relaxation by trapping D atoms, especially at room temperature.A large lattice distortion was created by 10 keV He pre-irradiation with about 1x10ィイD119ィエD1 He/mィイD12ィエD1, and the retention of the D atoms in W and Mo was str … More ongly enhanced at room temperature. At higher He dose, the D retention did not depend on the He pre-implantation dose. However, the lattice disorder was significantly accumulated in near surface layer and the thermal release of D atoms occurred at higher temperature in comparison with that for unirradiated crystals.Ion implanted D atoms accumulated in the surface oxide layer of Mo and W with a concentration of 4〜6x10ィイD128ィエD1 D atoms/ィイD13ィエD1 at room temperature. Carbon contained Mo surface layer also strongly enhanced the retention of D atoms in comparison with that for clean Mo surface, however, the D atoms distributed far beyond the carbon-enriched layer and distributed in single crystalline substrate region. Thickness of the oxide layer on the Mo was decreased during successive D implantation and heat treatment. On the other hand, the W oxide layer with high density of D atoms was stable during the annealing up to 800K. Thermal release of D atoms from the carbon containing layer of W and Mo occurred at considerably lower temperatures (〜350K) than that from clean surface. Less

用离子束分析技术研究了氦预注入和表面轻杂质（如碳和氧）对Mo和W晶体近表面层中D原子的保留和热释放的影响，从D原子的深度分布和注入引起的无序度的研究中，可以得出结论，D原子在Mo和W晶体中的俘获与注入诱导的扩展缺陷如间隙环引起的晶格畸变有关。这与离子通道实验的结果一致：在室温下，D原子被注入到W晶体中，并位于四面体间隙位附近，由于D原子被俘获而产生的局部弛豫，使得晶格畸变趋于稳定。而在W和Mo中D原子的保留是强的 ...更多信息在室温下，在较高的He剂量下，D保留不依赖于He植入前剂量。在室温下，离子注入的D原子在Mo和W的表面氧化层中积累，其浓度为4 × 6 × 10 ~（-1）D原子/10 ~（-1）D ~（-1）D原子/10 ~（-1）D ~（-1）D原子/10 ~（-1）D原子/10 ~（-1）D ~（-1）。含碳Mo表面层也大大提高了D原子的保留，但D原子分布在远离富碳层的单晶基底区域。在连续的D注入和热处理过程中，Mo上的氧化层的厚度减小。另一方面，具有高密度的D原子的W氧化物层是稳定的，在退火到800 K。D原子从W和Mo的含碳层的热释放发生在比从清洁表面的温度低得多的温度（~ 350 K）。少