Effects of residual oxygen on properties of cubic silicon carbide films

残余氧对立方碳化硅薄膜性能的影响

• 批准号: 11650029
• 负责人: SUN Yong
• 金额: $ 2.18万
• 依托单位: Kyushu Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650029/
• 关键词: Silicon carbide; Hydrogen plasma; Epitaxial growth; Low temperature; Silicon substrate; Impurity; Oxygen; Crystallinity; 3C-SiC薄膜; スパッタリング; 不純物酸素; ドーピング; 欠陥; 成長メカニズム

We report the self-organized growth of 0D-, 1D- and 2D-nanoscale SiC structures (grains, whiskers, and flakes) by a hydrogen plasma sputtering technique in which a small amount of oxygen is added to the hydrogen feed gas. Selective growth of the different structure is controlled by the substrate temperature, whiskers below approximately 800℃, grains in the range 800-900℃, and flakes at higher temperature. In the case of the first, the additional O atoms bond to Si resulting in tetragonal SiO_2 microcrystals in the SiC films, which nucleate whisker growth electrostatically. When the substrate temperature is above 800℃ deposits of amorphous carbon break up the developing film into small grains. With further increase of temperature, the carbon deposits are increasingly graphitic due to preferential formation of sp^2 bonding due to the presence of oxygen, resulting in the growth of SiC flakes.

我们报道了在氢气中加入少量氧气的氢等离子体溅射技术，自组织生长了0D、1D和2D纳米尺度的碳化硅结构(颗粒、晶须和片状)。不同结构的选择性生长是由衬底温度控制的，晶须在大约800℃以下，颗粒在800-900℃之间，片状在更高的温度下。在第一种情况下，额外的O原子与硅键合，在碳化硅薄膜中形成四方的SiO_2微晶，从而在静电作用下形成晶须生长。当衬底温度高于800时，非晶态碳的℃沉积将显影薄膜分解成小颗粒。随着温度的进一步升高，由于氧的存在优先形成了sp^2键，导致了碳化硅的片状生长，从而使沉积的碳层越来越石墨化。

项目成果

T.Miyasato,Y.sun et.al: "Growth and Characterization of Nanoscale 3D-SiC Islands on Si substrate"Journal of Applied Physics. 85. 3565-3568 (1999)

T.Miyasato、Y.sun 等人：“硅基板上纳米级 3D-SiC 岛的生长和表征”应用物理学杂志。

Y.Sun and T.Miyasato: "Characterization of Cubic SiC Films Grown on Thermally Oxidized Si Substrate"Journal of Applied Physics. 84. 2602-2611 (1998)

Y.Sun 和 T.Miyasato：“热氧化硅基板上生长的立方碳化硅薄膜的表征”应用物理学杂志。

Yong Sun,Tokihiro Ayabe and Tatsuro Miyasato: "Activation Energy of Nanoscale 3C-SiC Island Growth on Si Sunstrate"Japanese Journal of Applied Physics. 38. L1166-L1168 (1999)

Yong Sun、Tokihiro Ayabe 和 Tatsuro Miyasato：“Si Sunstrate 上纳米级 3C-SiC 岛生长的活化能”日本应用物理学杂志。

Yong Sun Tatsuro Miyasato and J.Keith Wigmore: "Self-organized Growth of Zero-, One-, and Two-dimensional Nanoscale SiC Structures by Oxygen-enhanced Hydrogen Plasma Sputtering"Japanese Journal of Applied Physics. 86. 3076-3082 (1999)

Yong Sun Tatsuro Miyasato 和 J.Keith Wigmore：“通过氧增强氢等离子体溅射实现零、一、二维纳米级 SiC 结构的自组织生长”《日本应用物理学杂志》。

Y.Sun,T.Miyasato et.al: "Outdiffusion of the Excess Carbon in SiC Films into Si substrate during Film Growth"Journal of Applied Physics. 84. 6451-6453 (1998)

Y.Sun、T.Miyasato 等人：“薄膜生长过程中 SiC 薄膜中的过量碳向外扩散到硅衬底中”应用物理学杂志。