Crystal growth of InGaAsN alloy using ECR plasma and basic investigation for realizing OEIC

使用ECR等离子体的InGaAsN合金晶体生长及实现OEIC的基础研究

• 批准号: 11650336
• 负责人: YODO Tokuo
• 金额: $ 2.3万
• 依托单位: Osaka Instizute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650336/
• 关键词: OEIC; ECR plasma; As doping; galium nitride; InGaAsN alloy; lattice matching; GaAsN alloy; Crystal structure; 結晶性; シリコン基板上窒化ガリウム; シリコン基板表面; プラズマダメージ; エピタキシャル成長; 立方晶窒化ガリウム; 窒化ガリウムインジウム砒素

In this research, we tried to grow epitaxial growth of In_XGa_<1-X>As_YN_<1-Y> alloy on nominal Si(001) and Si(111) substrates using ECR-MBE method. The alloy composition (Y) of In_XGa_<1-X>As_YN_<1-Y> alloy (x=0) on Si with lattice matching is estimated to be about 0.2. The alloy composition (Y) of In_XGa_<1-X>As_YN_<1-Y> alloy (y≠0) on Si with lattice matching is expected to be less than 0.2. Therefore, The crystal growth of In_XGa_<1-X>As_YN_<1-Y> alloy with good crystalline quality would be possible and well-matched with lattice constant of Si. However, the crystalline quality and crystal structure of In_XGa_<1-X>As_YN_<1-Y> alloy (x=0) are strongly dependent on the quantity of As-doping. The crystal structure has a zincblende type in light doping of As impurity while the crystal structure has a hexagonal type and the crystalline quality is greatly deteriorated in heavy doping. Moreover, the inert nitrogen molecules during ECR plasma obstructs the growth of GaN and drastically lowers the growth rates of GaN epitaxial layers. We have investigated whether this obstruction phenomenon occurs even in epitaxial growth of In_XGa_<1-X>As_YN_<1-Y> alloy (x and y≠0) or not at present.

在本研究中，我们尝试使用ECR-MBE方法在标称Si(001)和Si(111)衬底上外延生长In_XGa_<1-X>As_YN_<1-Y>合金。具有晶格匹配的Si上In_XGa_<1-X>As_YN_<1-Y>合金(x=0)的合金成分(Y)估计约为0.2。具有晶格匹配的Si上In_XGa_<1-X>As_YN_<1-Y>合金(y≠0)的合金成分(Y)预计小于0.2。因此，具有良好晶体质量且与Si晶格常数匹配良好的In_XGa_<1-X>As_YN_<1-Y>合金的晶体生长是可能的。然而，In_XGa_<1-X>As_YN_<1-Y>合金(x=0)的晶体质量和晶体结构强烈依赖于As掺杂量。 As杂质轻掺杂时，晶体结构为闪锌矿型，而重掺杂时，晶体结构为六方晶型，晶体质量大大恶化。此外，ECR等离子体过程中的惰性氮分子阻碍了GaN的生长并大大降低了GaN外延层的生长速率。我们目前已经研究了即使在In_XGa_<1-X>As_YN_<1-Y>合金(x和y≠0)的外延生长中是否也会出现这种阻碍现象。

项目成果

T.YODO,H.ANDO,H.TSUCHIYA,D.NOSEI,M.SHIMENO,Y.HARADA,M.FURUSAWA and M.YoSHIMOTO: "Influence of Inert Molecules,Nitrogen Radical Atoms and Nitrogen Molecular Ions an Growth Process and Crystal Structure of GaN Heteroepitaxial Layers Grown on Si(001) and Si(

T.YODO,H.ANDO,H.TSUCHIYA,D.Nosei,M.SHIMENO,Y.HARADA,M.FURUSAWA 和 M.YoSHIMOTO：“惰性分子、氮自由基原子和氮分子离子对生长过程和晶体的影响

T.YODO, H.Ando, H.Tsuchiya, D.Nosei, M.Shimeno and Y.Harada: "Influences of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE"Eleventh International Conference on

T.YODO、H.Ando、H.Tsuchiya、D.Nosei、M.Shimeno 和 Y.Harada：“生长前衬底氮化对在 Si(001) 和 Si(111) 上生长的 GaN 异质外延层的初始生长过程的影响

Tokuo Yodo,Masaaki Toyama,Yasuyuki Imai and Hideki Shirasawa: "Influences of off-angle and off-direction, of substrate on crystalline quality of GaAs and Ge heteroepitaxial films grown on vicinal Si(110) substrates by molecular-beam epitaxy"J.Cryst.Growth

Tokuo Yodo、Masaaki Toyama、Yasuyuki Imai 和 Hideki Shirasawa：“衬底偏角和偏向对分子束外延在邻位 Si(110) 衬底上生长的 GaAs 和 Ge 异质外延薄膜晶体质量的影响”J.

T.Yodo: "Model of Crystal Lattice Strained Along the Preferential Direction by Anisotropic Stress for GaAs Heteroepitaxial Films grown on Vicinal Si(001) and Si(110) Substrates by Molecular-Beam Epitaxy"J.Vac.Sci.Technol. A19・1. 287-291 (2001)

T.Yodo：“通过分子束外延在邻位 Si(001) 和 Si(110) 基板上生长的 GaAs 异质外延膜沿各向异性应力沿优先方向应变的晶格模型”J.Vac.Sci.Technol。 1. 287-291 (2001)

Tokuo YODO, Hironori TSUCHIYA, Hironori ANDO and Yoshiyuki HARADA: "Damage Due to Nitrogen Molecular Ions of GaN Heteroepitaxial Layers Grown on Si(001) Substrates by Molecular-Beam Epitaxy Assisted by Electron Cyclotron Resonance"Jpn.J.Appl.Phys. 39. 252

Tokuo YODO、Hironori TSUCHIYA、Hironori ANDO 和 Yoshiyuki HARADA：“通过电子回旋共振辅助的分子束外延在 Si(001) 基板上生长的 GaN 异质外延层的氮分子离子造成的损伤”Jpn.J.Appl.Phys。