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Crystal growth of AlInGaNAs 5-alloy nitrides and fundamental investigation for fabricating optoelectronic integration circuit

AlInGaNAs 5合金氮化物的晶体生长及其光电集成电路制造的基础研究

基本信息

批准号：
13650358
负责人：
YODO Tokuo
金额：
$ 2.75万
依托单位：
Osaka Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650358/
关键词：
InN Si substrate ECR plasma Nitride alloy crystal Hexagonal crystal Crystalline quality Anneal アニール Si基板 PL発光立方晶

项目摘要

In this year, we started fundamental research on crystal growth of 2-, 3- and 4-alloy nitrides including In atom such as InN/Si, InAs/Si and InGaNAs/Si before actually proceeding crystal growth of 5-alloy nitrides such as AlInGaNAs heteroepitaxial layers with higher crystalline quality on Si substrates. Because crystal growth of alloy nitrides including In atom at high temperature is difficult because of high evaporation of In metal as a source. With increasing the content of In atoms in alloy films, it was evident that the crystalline qualities of alloy films would be much degraded. Moreover, even simple InN films did not emit the band-edge PL emission at 8.5 K. Before investigating the research on crystal growth of 5-alloy nitrides, we decided to solve these problems in the first place. Therefore, we investigated the optimum growth conditions of InN films grown on Si substrates by electron cyclotron molecular beam epitaxy. We found the optimum growth conditions that InN film grown at 500 ℃ on the 10 nm-thick InN buffer layer at a growth temperature of 250 ℃ and under nitrogen plasma with twice of the usual 357 nm-plasma emission and the weakest 391 nm-plasma emission intensities is essential to obtain hexagonal-InN with the highest crystalline quality. Moreover, the substrate nitridation before growth promoted crystal growth of hexagonal-InN and dramatically improved crystalline quality. Unless the substrate nitridation, it is evident that the quality of the films would be degraded and become amorphous. Moreover, we annealed the samples at high temperatures using infrared light imaging furnace and tried the improvement of crystalline quality. As a result, the crystalline quality was much improved with increasing the anneal temperature. However, anneals higher than 550 ℃ abruptly degraded the surface morphologies of the films probably because of re-evaporation of N atoms from the surfaces of InN films.

在这一年，我们开始了包括InN/Si、InAs/Si和InGaNAs/Si在内的2-、3-和4合金氮化物晶体生长的基础研究，然后在Si衬底上实际进行了晶体质量更高的5合金氮化物如AlInGaNAs异质外延层的晶体生长。因为含In原子的合金氮化物在高温下由于In金属的高度蒸发而难以生长。随着合金膜中In原子含量的增加，合金膜的结晶质量明显下降。此外，即使是简单的InN薄膜也不会在8.5 K时发射带边PL。在研究5合金氮化物晶体生长之前，我们决定先解决这些问题。因此，我们研究了电子回旋分子束外延在Si衬底上生长InN薄膜的最佳生长条件。研究发现，在250℃的生长温度下，在10 nm厚的InN缓冲层上，在氮等离子体条件下，在500℃的温度下生长InN薄膜，获得具有最高结晶质量的六边形InN，其发射强度是通常的357 nm的两倍，最弱的391 nm。此外，生长前的衬底氮化促进了六边形inn的晶体生长，显著提高了晶体质量。除非衬底氮化，否则很明显薄膜的质量会下降并变成非晶态。此外，我们还利用红外成像炉对样品进行了高温退火，并尝试改善晶体质量。结果表明，随着退火温度的升高，晶体质量得到了明显改善。然而，当退火温度高于550℃时，由于N原子从InN薄膜表面再蒸发，导致薄膜表面形貌突然退化。