Crystal growth of GaAsN alloy using ECR plasma and basic investigation for realizing OEIC

在本研究中，我们尝试使用ECR-MBE方法在标称Si（001）衬底上生长GaAs_<1-x>xN_x合金外延薄膜。晶格匹配的GaAs_<1-x>xN_x在Si上的合金成分(x)估计约为20%。当合金成分为15%时，GaAs_<1-x>xN_x合金不能分离GaAs和GaN相，形成均匀的合金，但GaAs_<1-x>xN_x合金的结晶质量很差。合金成分大于15%的GaAs_<1-x>xN_x合金由于混相间隙使GaAs和GaN相分离。此外，尽管合金的晶格与Si匹配密切，但合金的结晶质量却大大下降。随着合金成分的增加，薄膜的结晶质量从5%左右开始下降，这可能是由于GaAs_<1-x>xN_x合金中混合了锌闪锌矿GaAs_<1-x>xN_x合金和六方GaAs_<1-x>xN_x合金。

In this research, we tried to grow epitaxial films of GaAs_<1-x>xN_x alloy on nominal Si(001) substrates using ECR-MBE method. The alloy composition (x) of GaAs_<1-x>xN_x on Si with lattice matching is estimated to be about 20 %. The GaAs_<1-x>xN_x alloy with alloy composition of 15 % did not separate GaAs and GaN phases and form uniform alloy, but the crystalline quality of GaAs_<1-x>xN_x alloy was very bad. The GaAs_<1-x>xN_x alloy with alloy compositions of more than 15% separated GaAs and GaN phases because of miscibility gap. Moreover, the crystalline quality of the alloy was greatly degraded despite of close lattice matching with Si. The crystalline quality of the films begins to be degraded from about 5 % by increasing the alloy composition, probably because of mixture of zincblende GaAs_<1-x>xN_x alloy and hexagonal GaAs_<1-x>xN_x in GaAs_<1-x>xN_x alloy.