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Studies on Reactive Sputtering Processes of Oxide Thin Films

Studies on Reactive Sputtering Processes of Oxide Thin Films
氧化物薄膜反应溅射工艺研究
批准号:
11680488
负责人:
MATSUDA Yoshinobu
金额:
$1.02万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2001

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中文摘要
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英文摘要
In the fiscal year 2001, we have succeeded in producing the high density ICP, and investigated the fundamental discharge properties under several operation conditions such as the sole PM operation, the sole ICP operation, and the simultaneous operation of PM and ICP.The use of functional oxide thin films such as MgO, TiO_2, ZnO, and A1_2O_3 has been rapidly increasing in industry because of superior electrical, optical, mechanical, and biological nature of these materials. Thus, the high-rate deposition of high-quality oxide thin films has been more demanded than ever. In the past, various techniques such as sputtering, electron-beam evaporation, ion plating, and sol-gel methods, have been used for the fabrication of oxide thin films. In general, the sputtering method has the distinct advantages of low temperature processing for polycrystalline materials, film uniformity over large areas, and scalabiliry; however, its industrial application has been limited due to its low deposition ra … More te. For example, the deposition rate for MgO in the sputter based method is at the most 0.5 nm/s. For the purpose of high-rate deposition of high-quality magnesium oxide thin films that have been used as the protection-layers of discharge electrodes in plasma display panels, we have proposed a new reactive sputtering process in which conventional planar magnetron (PM) is assisted -by the inductively coupled plasma (ICP).Obtained results in the fiscal year 2001 are summarized as follows :1) By-using an internal single-turn coil antenna, we have succeeded in producing high-density ICP.2) Application of 13.56MHz RF power of several hundreds ofW generated an ideal ICP with a density of more than 10^<17>m^<-3>.3) As a result of the optical emission measurements of the axial and radial spatial profiles with an image-intensified CCD camera and spectrometers, we have confirmed that an ideal ICP was produced between the target and substrate electrodes.4) As a result of the comparison between the above-mentioned operation conditions, we have confirmed that the simultaneous operation of ICP and PM is effective for reionizing the sputtered metallic atoms. Less
期刊论文(41)
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通讯作者:
Koji Otomo: "Quantitative Analysis of Hysteresis Characteristics in Reactive Sputtering"Proceedings of The 17th Symposium on Plasma Processing. 177-180 (2000)
大友浩二:《反应溅射中磁滞特性的定量分析》第十七届等离子体加工研讨会论文集。
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Kei Tashiro: "Dynamic Change in Residual Oxygen Pressure during Reactive Sputtering Process of MgO"Proceedings of Plasma Science Symposium 2001/the 18^<th> Symposium on Plasma Processing, January 24-26 2001, Kyoto. 603-604 (2001)
Kei Tashiro:“MgO 反应溅射过程中残余氧压力的动态变化”2001 年等离子体科学研讨会论文集/第 18 次等离子体处理研讨会,2001 年 1 月 24-26 日,京都​​。
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Y. Matsuda, K. Tashiro, K. Otomo and H. Fujiyama: "Global Quantitative Analysis of Reactive Sputtering Process for MgO Deposition"Proceedings of the 7th International Display Workshops (IDW2000), Nov.29-Dec.1, 2000, Kobe. (invited). 667-670 (2000)
Y. Matsuda、K. Tashiro、K. Otomo 和 H. Fujiyama:“MgO 沉积反应溅射过程的全球定量分析”第七届国际显示研讨会 (IDW2000) 会议记录,2000 年 11 月 29 日至 12 月 1 日,神户
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26
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    • 批准号:
      16K04995
    • 项目类别:
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    • 资助金额:
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    • 财政年份:
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    • 负责人:
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    • 依托单位:
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    • 项目类别:
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    • 财政年份:
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    • 负责人:
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    • 依托单位:
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