Development of highly sensitive analysis technique for semiconductor process induced contamination impurities

通过日本和德国的合作，获得了以下结果：(1)阐明了日本开发的带有FIB-RBS和TOF-RBS的使用离子微纳探针的无损局域分析技术与德国使用的破坏性晶片规模分析技术(如SIMS、VPD-TXRF和VPD-AAS)之间的权衡。(2)对污染杂质进行了从晶片级到设备级的分析，以识别每个杂质并进行定量测量。微纳米探针在SOI MOSFET的浅掺杂分布和可塑性等方面的应用得到了进一步的发展。(3)利用局域离子束分析，成功地将硅片中的少数载流子映射和扩散常数映射与污染杂质映射数据进行了对比。(4)为超高灵敏度的局域化分析技术奠定了基础。

The object of this study was to establish localized analysis techniques with ultra high sensetivity for process contaminated impurities using the same samples for both localized ion probe techniques with ultra high sensitivity being developed in Japan and destructive wafer-scale analysis techniques being used in Germany, which is a key issue for future ultra high density integrated circuit development. The following results were obtained through Japan and German collaboration.(1) The trade-off between non-destructive localized analysis techniques using ion micro and nano probes with FIB-RBS and TOF-RBS developed in Japan and destructive wafer-scale analysis techniques such as SIMS, VPD-TXRF and VPD-AAS used in Germany was clarified for analysis steps.(2) Analysis of contaminated impurities from a wafer-level to device levels has been performed to identify each of the impurities and to measure quantatively. Further applications of micro and nano probes to shallow dopat profiling and iastability of SOI MOSFET have been developed.(3) Minority carrier mapping and diffusion constant mapping in a wafer were successfully conpared with contaminated impurity mapping data using localized ion beam analyses.(4) Fundamental basis for localized analysis techniques with ultra high sensitivity was established through the collaboration.