Development of highly sensitive analysis technique for semiconductor process induced contamination impurities

本研究的目的是为日本正在开发的超高灵敏度局部离子探针技术和德国正在使用的破坏性晶圆级分析技术，在相同的样品中建立对工艺污染杂质的超高灵敏度局部分析技术，这是未来超高密度集成电路发展的关键问题。通过日本和德国的合作，获得了以下结果。(1)在分析步骤中，明确了日本开发的使用FIB-RBS和TOF-RBS的离子微纳米探针的无损定位分析技术与德国使用的SIMS、VPD-TXRF和VPD-AAS等破坏性晶圆级分析技术之间的权衡。(2)对从晶圆级到器件级的污染杂质进行了分析，以确定每种杂质并进行定量测量。微纳探针在SOI MOSFET的浅dopat谱和稳定性方面的进一步应用得到了发展。(3)利用局域离子束分析，成功地将硅片中的少数载流子映射和扩散常数映射与污染杂质映射数据进行了比较。(4)通过合作，为超高灵敏度的局部分析技术奠定了基础。

The object of this study was to establish localized analysis techniques with ultra high sensetivity for process contaminated impurities using the same samples for both localized ion probe techniques with ultra high sensitivity being developed in Japan and destructive wafer-scale analysis techniques being used in Germany, which is a key issue for future ultra high density integrated circuit development. The following results were obtained through Japan and German collaboration.(1) The trade-off between non-destructive localized analysis techniques using ion micro and nano probes with FIB-RBS and TOF-RBS developed in Japan and destructive wafer-scale analysis techniques such as SIMS, VPD-TXRF and VPD-AAS used in Germany was clarified for analysis steps.(2) Analysis of contaminated impurities from a wafer-level to device levels has been performed to identify each of the impurities and to measure quantatively. Further applications of micro and nano probes to shallow dopat profiling and iastability of SOI MOSFET have been developed.(3) Minority carrier mapping and diffusion constant mapping in a wafer were successfully conpared with contaminated impurity mapping data using localized ion beam analyses.(4) Fundamental basis for localized analysis techniques with ultra high sensitivity was established through the collaboration.