Development of highly sensitive analysis technique for semiconductor process induced contamination impurities

本研究的目的是建立本地化分析技术与超高灵敏度的过程中污染的杂质使用相同的样品的本地化离子探针技术与超高灵敏度正在开发中的日本和破坏性的晶圆级分析技术正在使用在德国，这是一个关键问题，为未来的超高密度集成电路的发展。通过日本和德国的合作取得了以下成果。(1)阐明了在分析步骤中，使用日本开发的具有FIB RBS和TOF-RBS的离子微米和纳米探针的非破坏性局部分析技术与德国使用的诸如西姆斯、VPD-TXRF和VPD-AAS的破坏性晶片级分析技术之间的权衡。(2)从晶圆级到器件级的污染杂质分析已被执行，以识别每种杂质并测量定量。微纳探针在SOI MOSFET的浅掺杂分布和不稳定性研究中的应用也得到了进一步的发展。(3)用定域离子束分析方法成功地将晶片中的少数载流子分布和扩散常数分布与杂质分布数据相结合。(4)通过合作，为超高灵敏度的本地化分析技术奠定了基础。

The object of this study was to establish localized analysis techniques with ultra high sensetivity for process contaminated impurities using the same samples for both localized ion probe techniques with ultra high sensitivity being developed in Japan and destructive wafer-scale analysis techniques being used in Germany, which is a key issue for future ultra high density integrated circuit development. The following results were obtained through Japan and German collaboration.(1) The trade-off between non-destructive localized analysis techniques using ion micro and nano probes with FIB-RBS and TOF-RBS developed in Japan and destructive wafer-scale analysis techniques such as SIMS, VPD-TXRF and VPD-AAS used in Germany was clarified for analysis steps.(2) Analysis of contaminated impurities from a wafer-level to device levels has been performed to identify each of the impurities and to measure quantatively. Further applications of micro and nano probes to shallow dopat profiling and iastability of SOI MOSFET have been developed.(3) Minority carrier mapping and diffusion constant mapping in a wafer were successfully conpared with contaminated impurity mapping data using localized ion beam analyses.(4) Fundamental basis for localized analysis techniques with ultra high sensitivity was established through the collaboration.