High Brightness Electron Source Array and Its Development to Vacuum Microelectronics (Summary)

1）作为场致发射阵列的新型阴极材料，研究了过渡金属氮化物（HfN，TaN，NbN）和碳化物（HfC，WC，VC，ZrC，CrC），其中NbN是最稳定的阴极材料。利用束诱导工艺制备了一种纳米间隙的分裂发射体，用于可能的电子束干涉测量。3）紫外激光辐照Si或Spindt型场发射体阵列可以改善电子发射行为，其中激光光子解吸吸附在空气中的水组分。紫外激光处理碳纳米管（CNT）阴极被发现增加了4个数量级的电子发射。发现来自CNT阴极的场发射即使在10 μ Pa的真空下也是稳定<-4>的。 ...更多信息 通过分子束局部功函数和表面改性，发现利用功函数控制表面反应是可能的。5）利用场发射显微镜研究了Spindt型场发射体的稳定性和发射百分比。实验结果表明，采用气体环境发射可以使有源微尖的比例提高到90%以上。6）研究了场发射电子的能量分布。制备了GaAs/AlAs量子结构共振隧穿发射体。n型和n型硅的能量分布分别为0.4和0.8 eV。7）对于具有纳米间隙的单晶硅横向发射体，可以获得大于1 mA的发射电流。8）在硅发射体上制备单晶和多晶金刚石，用于高亮度场发射体。在硅发射极上镀一层金刚石薄膜可以改善发射性能，而镀一层金刚石薄膜则会导致电子发射性能下降。9）观察到GaAs古恩效应在微米和毫米波段的电子发射。低能场发射电子束通过光栅附近时，观察到可见-近红外波段的Smith-Purcell辐射。研制了一种微型脉冲X射线源，并进行了时间分辨X射线照相实验，时间分辨为10 μ s。少

1)As new cathode materials for field emitter arrays, transition metal nitride (HfN, TaN, NbN) and carbide (HfC, WC, VC, ZrC, CrC) have been investigated, in which NbN was found to be the most stable cathode material among investigated materials.2)Nanometer-sized field emitters could be fabricated using focused ion and electron beams (dual beams) in a same chamber by introducing metal-organic reaction gas species. A nano-gapped split emitter has been fabricated using beam induced processes for possible electron beam interference measurement.3)UV (ultra-violet) laser irradiation over Si or Spindt-type field emitter arrays was found to improve the electron emission behavior, where laser photons desorb the water components adsorbed in the air. UV laser treatment of carbon nanotube (CNT) cathodes was found to increase the electron emission by 4 orders of magnitude. The field emission from CNT cathodes was found to stable even at a vacuum of 10^<-4> Pa.4)Through the precise investigation of … More local work function and surface modification by molecular beams, surface reaction controls via work functions were found possible.5)The stability and emission percentage of Spindt-type field emitters were investigated using a field emission microscope. The percentage of active micro tips were found to be increased up to 90% by a gas ambient emission.6)The energy spread of field emitted electrons has been investigated. Resonant tunneling emitters using GaAs/AlAs quantum structures have been fabricated. The energy spreads of 0.4 and 0.8 eV were obtained for n-and -type Si, respectively.7)An emission current of more than 1 mA could be obtained for a single crystalline Si lateral emitter with a nano gap.8)Single and poly-crystalline diamonds were fabricated on Si emitters for high brightness field emitters. A coating of thin poly crystalline diamond film on Si emitter was found to improve the emission behavior, while a single crystalline diamond coating resulted in poor electron emission.9)Electron emission due to a GaAs Gunn effect for micro-and milli-meter wavelength application was observed. Smith-Purcell radiation in a visible-to-near infrared wavelength was observed for the low energy field emitted electron beam passing close to a grating. A miniature sized pulsed X-ray source was fabricated and a time-resolved X-ray radiography with a time resolution of 10 us was demonstrated. Less