High Brightness Electron Source Array and Its Development to Vacuum Microelectronics (Summary)

高亮度电子源阵列及其在真空微电子领域的发展（综述）

• 批准号: 12135101
• 负责人: TAKAI Mikio
• 金额: $ 3.58万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research on Priority Areas
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12135101/
• 关键词: Vacuum microelectronics; Laser Cleaning; Transition metal nitride and carbide cathodes; Nano-sized electron source; Field emitter array; Electron emission; Low energy spread; Field emission; 電界放出電子源; 電子源の高輝度化; 電子源の安定化; FED; ディスプレイ; 陰極材料

1)As new cathode materials for field emitter arrays, transition metal nitride (HfN, TaN, NbN) and carbide (HfC, WC, VC, ZrC, CrC) have been investigated, in which NbN was found to be the most stable cathode material among investigated materials.2)Nanometer-sized field emitters could be fabricated using focused ion and electron beams (dual beams) in a same chamber by introducing metal-organic reaction gas species. A nano-gapped split emitter has been fabricated using beam induced processes for possible electron beam interference measurement.3)UV (ultra-violet) laser irradiation over Si or Spindt-type field emitter arrays was found to improve the electron emission behavior, where laser photons desorb the water components adsorbed in the air. UV laser treatment of carbon nanotube (CNT) cathodes was found to increase the electron emission by 4 orders of magnitude. The field emission from CNT cathodes was found to stable even at a vacuum of 10^<-4> Pa.4)Through the precise investigation of … More local work function and surface modification by molecular beams, surface reaction controls via work functions were found possible.5)The stability and emission percentage of Spindt-type field emitters were investigated using a field emission microscope. The percentage of active micro tips were found to be increased up to 90% by a gas ambient emission.6)The energy spread of field emitted electrons has been investigated. Resonant tunneling emitters using GaAs/AlAs quantum structures have been fabricated. The energy spreads of 0.4 and 0.8 eV were obtained for n-and -type Si, respectively.7)An emission current of more than 1 mA could be obtained for a single crystalline Si lateral emitter with a nano gap.8)Single and poly-crystalline diamonds were fabricated on Si emitters for high brightness field emitters. A coating of thin poly crystalline diamond film on Si emitter was found to improve the emission behavior, while a single crystalline diamond coating resulted in poor electron emission.9)Electron emission due to a GaAs Gunn effect for micro-and milli-meter wavelength application was observed. Smith-Purcell radiation in a visible-to-near infrared wavelength was observed for the low energy field emitted electron beam passing close to a grating. A miniature sized pulsed X-ray source was fabricated and a time-resolved X-ray radiography with a time resolution of 10 us was demonstrated. Less

1)研究了过渡金属氮化物（HfN、TaN、NbN）和碳化物（HfC、WC、VC、ZrC、CrC）作为场极阵列的新型正极材料，其中NbN是研究材料中最稳定的正极材料。2)通过引入金属-有机反应气体，利用离子束和电子束（双束）在同一腔室中聚焦制备纳米级场发射体。利用束流诱导工艺制备了一种用于电子束干涉测量的纳米间隙分裂发射极。3)发现紫外（紫外线）激光照射在Si或spindt型场发射阵列上可以改善电子发射行为，其中激光光子解吸吸附在空气中的水成分。紫外激光处理碳纳米管（CNT）阴极，发现电子发射增加了4个数量级。在10^<-4> pa的真空条件下，碳纳米管阴极的场发射也保持稳定。通过对分子束的局部功函数和表面修饰的精确研究，发现通过功函数控制表面反应是可能的。5)利用场发射显微镜研究了spindt型场发射体的稳定性和发射率。研究发现，由于气体环境的排放，活跃微针尖的百分比增加了90%。研究了场发射电子的能量扩散。利用GaAs/AlAs量子结构制备了共振隧道发射体。n型和Si型的能差分别为0.4和0.8 eV。7)单晶硅横向发射极具有纳米间隙，发射电流可达1ma以上。8)在Si发射体上制备了单晶和多晶金刚石作为高亮度场发射体。在Si发射极表面涂覆薄的多晶金刚石薄膜可以改善发射性能，而单晶金刚石涂层导致发射性能差。9)在微米和毫米波应用中观察到砷化镓Gunn效应引起的电子发射。研究了低能场发射的电子束经过光栅附近时，在可见至近红外波段的史密斯-珀塞尔辐射。制作了一个小型脉冲x射线源，并演示了时间分辨率为10us的时间分辨x射线照相。少

项目成果

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M.Y.Liao：“纳米结构异质 HfNxOy 薄膜的场电子发射”应用物理快报 83・8（2003）。

Y.Saitho, H.Nakane, H.Adachi: "Field electron emission from W covered with In"J. Vac. Sci. Technol.. B188(2). 1093-1096 (2000)

Y.Saitho、H.Nakane、H.Adachi：“In 覆盖的 W 的场电子发射”J。

H.Shimawaki: "Submicron poly-Si gate Si field-emitter array for generation of a collimated electron beeam"J. Vac. Sci. Tech.. B21. 1594-1597 (2003)

H.Shimawaki：“用于生成准直电子束的亚微米多晶硅栅极硅场发射器阵列”J。

Y.Gotoh: "Formation and control of stoichiometric hafnium nitride thin films by direct sputtering of hafnium nitride target"Japan. J. of Appl. Phys. Part 2. 42(7A). L778-L780 (2003)

Y.Gotoh：“通过直接溅射氮化铪靶材形成和控制化学计量氮化铪薄膜”，日本。

H.Ishizuka et al.: "Laser-assisted electron emission from gated field-emitters"Nuclear Instr.Meth.Phys.Resear.A. 483. 305-309 (2002)

H.Ishizuka 等人：“门控场发射器的激光辅助电子发射”Nuclear Instr.Meth.Phys.Resear.A。