High Brightness Electron Source Array and Its Development to Vacuum Microelectronics (Summary)
High Brightness Electron Source Array and Its Development to Vacuum Microelectronics (Summary)
批准号:
12135101
负责人:
TAKAI Mikio
金额:
$3.58万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2003
中文摘要
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英文摘要
1)As new cathode materials for field emitter arrays, transition metal nitride (HfN, TaN, NbN) and carbide (HfC, WC, VC, ZrC, CrC) have been investigated, in which NbN was found to be the most stable cathode material among investigated materials.2)Nanometer-sized field emitters could be fabricated using focused ion and electron beams (dual beams) in a same chamber by introducing metal-organic reaction gas species. A nano-gapped split emitter has been fabricated using beam induced processes for possible electron beam interference measurement.3)UV (ultra-violet) laser irradiation over Si or Spindt-type field emitter arrays was found to improve the electron emission behavior, where laser photons desorb the water components adsorbed in the air. UV laser treatment of carbon nanotube (CNT) cathodes was found to increase the electron emission by 4 orders of magnitude. The field emission from CNT cathodes was found to stable even at a vacuum of 10^<-4> Pa.4)Through the precise investigation of … More local work function and surface modification by molecular beams, surface reaction controls via work functions were found possible.5)The stability and emission percentage of Spindt-type field emitters were investigated using a field emission microscope. The percentage of active micro tips were found to be increased up to 90% by a gas ambient emission.6)The energy spread of field emitted electrons has been investigated. Resonant tunneling emitters using GaAs/AlAs quantum structures have been fabricated. The energy spreads of 0.4 and 0.8 eV were obtained for n-and -type Si, respectively.7)An emission current of more than 1 mA could be obtained for a single crystalline Si lateral emitter with a nano gap.8)Single and poly-crystalline diamonds were fabricated on Si emitters for high brightness field emitters. A coating of thin poly crystalline diamond film on Si emitter was found to improve the emission behavior, while a single crystalline diamond coating resulted in poor electron emission.9)Electron emission due to a GaAs Gunn effect for micro-and milli-meter wavelength application was observed. Smith-Purcell radiation in a visible-to-near infrared wavelength was observed for the low energy field emitted electron beam passing close to a grating. A miniature sized pulsed X-ray source was fabricated and a time-resolved X-ray radiography with a time resolution of 10 us was demonstrated. Less
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A.Seidl: "Accuracy Problems in Simulation of Field Emitter Devices Using Finite Elements"J.Computational Physics. 166. 159-164 (2001)
A.Seidl:“使用有限元模拟场发射器装置的精度问题”J.计算物理学。
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M.Y.Liao: "Field electron emission from nanostructured heterogeneous HfNxOy films"Applied Physics Letters. 83・8. 1626-1628 (2003)
M.Y.Liao:“纳米结构异质 HfNxOy 薄膜的场电子发射”应用物理快报 83・8(2003)。
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Y.Saitho, H.Nakane, H.Adachi: "Field electron emission from W covered with In"J. Vac. Sci. Technol.. B188(2). 1093-1096 (2000)
Y.Saitho、H.Nakane、H.Adachi:“In 覆盖的 W 的场电子发射”J。
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Y.Gotoh: "Formation and control of stoichiometric hafnium nitride thin films by direct sputtering of hafnium nitride target"Japan. J. of Appl. Phys. Part 2. 42(7A). L778-L780 (2003)
Y.Gotoh:“通过直接溅射氮化铪靶材形成和控制化学计量氮化铪薄膜”,日本。
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H.Shimawaki: "Submicron poly-Si gate Si field-emitter array for generation of a collimated electron beeam"J. Vac. Sci. Tech.. B21. 1594-1597 (2003)
H.Shimawaki:“用于生成准直电子束的亚微米多晶硅栅极硅场发射器阵列”J。
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共 96 条
Electron emission from pyroelectric crystal excited by laser light and its miniature X-ray source application
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批准号:23360022
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项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$12.4万
-
财政年份:2011
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负责人:TAKAI Mikio
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依托单位:
Fabrication of Electron Source with Electron-Wave Interference by Nano Beam Induced Deposition Process
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批准号:19206008
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$28.95万
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财政年份:2007
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负责人:TAKAI Mikio
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依托单位:
Fabrication of Field Emitter Arrays Using Beam Assisted Processing and Their Stabilization
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批准号:12135205
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$21.44万
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财政年份:2000
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负责人:TAKAI Mikio
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依托单位:
Development of highly sensitive analysis technique for semiconductor process induced contamination impurities
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批准号:11694157
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$9.91万
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财政年份:1999
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负责人:TAKAI Mikio
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依托单位:
Fabrication and Characterization of Vacuum Nano Electron Source by in-situ Beam Processing
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批准号:10450138
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.87万
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财政年份:1998
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负责人:TAKAI Mikio
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依托单位:
Development of Three Dimensional Nano Analysis Technique
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批准号:08044148
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$8.9万
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财政年份:1996
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负责人:TAKAI Mikio
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依托单位:
Fabrication of Nanometer Structure and Its Application
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批准号:06044139
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项目类别:Grant-in-Aid for Overseas Scientific Survey.
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资助金额:$6.91万
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财政年份:1994
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负责人:TAKAI Mikio
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依托单位:
Development of Nanometer Ion Beam Processing Technology
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批准号:02044092
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$8.7万
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财政年份:1990
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负责人:TAKAI Mikio
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依托单位:
海外基金