Development of Nanometer Ion Beam Processing Technology
纳米离子束加工技术的发展
基本信息
- 批准号:02044092
- 负责人:
- 金额:$ 8.7万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for international Scientific Research
- 财政年份:1990
- 资助国家:日本
- 起止时间:1990 至 1992
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Following ion beam processes, ranging down to a nanometer scale, have been studied by collaboration of researchers between Osaka University and Fraunhofer Institute ; high energy implantation, oblique ion implantation, maskless implantation, SIMOX/SOI processes, well engineering for soft error immunity, SALICIDE processes, contact hole formation, metal deposition, etching and in situ full vacuum beam processing.Localized analysis techniques using ion beams for future ion beam processing have been developed with emphasis on following issues ; ion microprobe techniques with various energies and ion species using different types of accelerators, data acquisition system, image processing with RBS, PIXE, channeling contrast, and soft errors. Problems arising from microprobe measurements such as beam damage and ablation have been clarified. Applicability and limitation of the microprobe techniques to future ion beam processes have been tasted and clarified.Process simulators developed by the Fraunhofer group, COMPOSITE (2 dimensional) and ICECREM (1 dimensional), have been verified for future ion beam processes. Improvement and extension of these two simulators for future processing have been carried out.A process simulator, realizing the simulation of dynamic ion beam mixing, (i.e,.ion beam mixing during vapor deposition) has, for the first time, developed by the collaboration, which enables us to design material syntesis using dynamic ion mixing techniques.In-situ full vacuum Processing, avoiding semiconductor sample contamination due to exposure in the air, has been verified for material growth using molecular beam epitaxy and doping/etching/deposition using focused ion beams.
大阪大学和弗劳恩霍夫研究所的研究人员合作研究了以下离子束过程:高能注入、斜向离子注入、无掩模注入、SIMOX/SOI工艺、软错误抗扰性良好工程、SALICIDE工艺、接触孔形成、金属沉积、蚀刻和原位全真空束处理。利用离子束进行未来离子束处理的局部化分析技术已经开发出来,重点关注以下问题:使用不同类型加速器的不同能量和离子种类的离子探针技术、数据采集系统、RBS图像处理、PIXE、沟道对比度和软错误。微探头测量引起的问题,如束流损坏和烧蚀,已经得到澄清。微探针技术对未来离子束过程的适用性和局限性已经得到了检验和澄清。由Fraunhofer小组开发的过程模拟器,COMPAY(2维)和ICECREM(1维),已经被验证用于未来的离子束过程。对这两个模拟器进行了改进和扩展,以用于未来的加工。合作开发了一个工艺模拟器,实现了动态离子束混合(即气相沉积过程中的离子束混合)的模拟,使我们能够使用动态离子混合技术设计材料合成。原位全真空工艺避免了半导体样品因暴露在空气中而受到污染,已经通过分子束外延和聚焦离子束掺杂/刻蚀/沉积验证了材料生长。
项目成果
期刊论文数量(149)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
A.KINOMURA: "RBS Tomography of SOI Structures using a MeV Ion Microprobe" Nucl.Instr.and Methods. B45. 523-526 (1990)
A.KINOMURA:“使用 MeV 离子微探针对 SOI 结构进行 RBS 断层扫描”Nucl.Instr.and 方法。
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H.SANDA: "Change in Magnetic Characteristic of Stainless-Steel by Laser and Ion Beams" Beam-Solid Interactions: Physical Phenomena,ed.by P.Borgesen,J.A.Knapp,and R.A.Zuhr (Materials Research Society). 813-818 (1990)
H.SANDA:“激光和离子束改变不锈钢的磁特性”梁-固相互作用:物理现象,由 P.Borgesen、J.A.Knapp 和 R.A.Zuhr(材料研究协会)编辑。
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Y.HORINO: "Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis" Japan.J.Appl.Phys.29. 2680-2683 (1990)
Y.HORINO:“用于材料改性和原位分析的 MeV 重离子微束线”Japan.J.Appl.Phys.29。
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M.TAKAI: "Influence of Beam Current Fluctuation on Secondary Electron and RBS Mapping Images" Nucl.Instr.and Methods. B54. 279-283 (1991)
M.TAKAI:“束流波动对二次电子和 RBS 映射图像的影响”Nucl.Instr.and 方法。
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Y.F.Lu: "Modification of Magnetic Property in Mn-Zn Ferrite by MeV Ion Implantation" Appl.phys.Lett.58. 983-985 (1991)
Y.F.Lu:“MeV离子注入对Mn-Zn铁氧体磁性的改性”Appl.phys.Lett.58。
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TAKAI Mikio其他文献
TAKAI Mikio的其他文献
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{{ truncateString('TAKAI Mikio', 18)}}的其他基金
Electron emission from pyroelectric crystal excited by laser light and its miniature X-ray source application
激光激发热释电晶体电子发射及其微型X射线源应用
- 批准号:
23360022 - 财政年份:2011
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Fabrication of Electron Source with Electron-Wave Interference by Nano Beam Induced Deposition Process
纳米束诱导沉积电子波干涉电子源的制作
- 批准号:
19206008 - 财政年份:2007
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Fabrication of Field Emitter Arrays Using Beam Assisted Processing and Their Stabilization
使用束辅助加工制造场发射器阵列及其稳定性
- 批准号:
12135205 - 财政年份:2000
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
High Brightness Electron Source Array and Its Development to Vacuum Microelectronics (Summary)
高亮度电子源阵列及其在真空微电子领域的发展(综述)
- 批准号:
12135101 - 财政年份:2000
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
Development of highly sensitive analysis technique for semiconductor process induced contamination impurities
开发半导体工艺引起的污染杂质的高灵敏度分析技术
- 批准号:
11694157 - 财政年份:1999
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Fabrication and Characterization of Vacuum Nano Electron Source by in-situ Beam Processing
原位束流加工真空纳米电子源的制备和表征
- 批准号:
10450138 - 财政年份:1998
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of Three Dimensional Nano Analysis Technique
三维纳米分析技术的发展
- 批准号:
08044148 - 财政年份:1996
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for international Scientific Research
Fabrication of Nanometer Structure and Its Application
纳米结构的制备及其应用
- 批准号:
06044139 - 财政年份:1994
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Overseas Scientific Survey.