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Development of Nanometer Ion Beam Processing Technology

纳米离子束加工技术的发展

基本信息

批准号：
02044092
负责人：
TAKAI Mikio
金额：
$ 8.7万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for international Scientific Research
财政年份：
1990
资助国家：
日本
起止时间：
1990 至 1992
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02044092/
关键词：
ion beam process full vacuum beam process maskless ion implantation SIMOX ion implanted well ion beam mixing ion beam analysis process simulation イオンイオンビ-ムプロセス集束イオンビ-ム高エネルギ-イオン注入プロセスモデリングビ-ム分析トモグラフィ-イオン注入

项目摘要

Following ion beam processes, ranging down to a nanometer scale, have been studied by collaboration of researchers between Osaka University and Fraunhofer Institute ; high energy implantation, oblique ion implantation, maskless implantation, SIMOX/SOI processes, well engineering for soft error immunity, SALICIDE processes, contact hole formation, metal deposition, etching and in situ full vacuum beam processing.Localized analysis techniques using ion beams for future ion beam processing have been developed with emphasis on following issues ; ion microprobe techniques with various energies and ion species using different types of accelerators, data acquisition system, image processing with RBS, PIXE, channeling contrast, and soft errors. Problems arising from microprobe measurements such as beam damage and ablation have been clarified. Applicability and limitation of the microprobe techniques to future ion beam processes have been tasted and clarified.Process simulators developed by the Fraunhofer group, COMPOSITE (2 dimensional) and ICECREM (1 dimensional), have been verified for future ion beam processes. Improvement and extension of these two simulators for future processing have been carried out.A process simulator, realizing the simulation of dynamic ion beam mixing, (i.e,.ion beam mixing during vapor deposition) has, for the first time, developed by the collaboration, which enables us to design material syntesis using dynamic ion mixing techniques.In-situ full vacuum Processing, avoiding semiconductor sample contamination due to exposure in the air, has been verified for material growth using molecular beam epitaxy and doping/etching/deposition using focused ion beams.

大坂大学和弗劳恩霍夫研究所的研究人员合作研究了以下离子束过程，范围低至纳米尺度;高能注入、倾斜离子注入、无掩模注入、SIMOX/SOI工艺、用于软错误免疫的阱工程、SALICIDE工艺、接触孔形成、金属沉积蚀刻和原位全真空束加工。为未来的离子束加工而开发的离子束局部分析技术，重点是以下问题：使用不同类型加速器的各种能量和离子种类的离子微探针技术、数据采集系统、RBS图像处理、PIXE、沟道对比度和软错误。微探针测量中出现的问题，如光束损伤和烧蚀已得到澄清。对微探针技术在未来离子束工艺中的适用性和局限性进行了分析和评述，并对Fraunhofer小组开发的工艺模拟器COMPOSITE（二维）和ICECREM（一维）进行了验证。对这两个模拟器进行了改进和扩展，实现了离子束动态混合的模拟，（即气相沉积过程中的离子束混合）首次由该合作开发，这使我们能够使用动态离子混合技术设计材料合成。避免了由于暴露在空气中而导致的半导体样品污染，已经在使用分子束外延和使用聚焦离子束的掺杂/蚀刻/沉积的材料生长中得到验证。