Fabrication of Nanometer Structure and Its Application

纳米结构的制备及其应用

基本信息

项目摘要

Fabrication of nanometer structure and its application have been investigated by a joint research between Osaka University and Fraunhofer Institut fuer Feskoerpertechnologie under the International Scientific Research Program of the Ministry of Education, Science, Sport and Culture.Localized electrolytic reaction by a scanning tunneling microscope (STM) tip, dipped in a solution, induced a localized metal deposition with a size of several hundred nanometers, while a metal-covered STM tip could realize a controlled deposition with a size of nanometer by field evaporation. Metal species could be controlled by a precise adjustment of applied pulsed-bias between the tip and a target sample, which would determine the electric field for field evaporation on the STM tip. This technique would facilitate to fabricate metal electrode structures of quantum electron devices such as single electron transistors. Nano-scale interdigital metal structures would also provide a new sensing application.Medium energy ion scattering with and without focused ion beams has been applied to modified surface nano-structures in order to characterize the atomic positions of ad-atoms. The results were compared with those investigated by STM to exactly locate ad-atoms on crystalline surface.A silicon (Si) nanometer structure by anodization, porous Si, has been applied to electron emitter tips of field emission arrays (FEAs). FEAs with nano-structure emission tips showed enhanced emission by an order of magnitude over FEAs with conventional single crystalline Si emitter tips. Further application of nano-structures fabricated by the technique developed in this study is in progress.
大阪大学和Fraunhofer Feskoerpertechnologie研究所在教育、科学、体育和文化部的国际科学研究计划下共同研究了纳米结构的制造及其应用。扫描隧道显微镜(STM)针尖在溶液中浸出局部电解反应,可形成数百纳米尺寸的局部金属沉积,而覆盖金属的STM针尖可通过场蒸发实现纳米尺寸的可控沉积。金属种类可以通过精确调整尖端和目标样品之间施加的脉冲偏压来控制,这将决定STM尖端上场蒸发的电场。该技术将有助于制作单电子晶体管等量子电子器件的金属电极结构。纳米级数字间金属结构也将提供一种新的传感应用。有或没有聚焦离子束的中能离子散射已被应用于修饰的表面纳米结构,以表征原子的原子位置。将结果与STM法进行比较,以精确定位晶体表面的ad-原子。通过阳极氧化制备的硅纳米结构多孔硅已被应用于场发射阵列(FEAs)的电子发射端。与传统单晶硅发射极相比,纳米结构发射极的发射强度提高了一个数量级。本研究开发的纳米结构的进一步应用正在进行中。

项目成果

期刊论文数量(17)
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H.Andoh: "Nanoscale Deposition from a Metal-Covered Scanning Tunneling Microscope Tip" J.Appl. Phys.(in press).
H.Andoh:“金属覆盖的扫描隧道显微镜尖端的纳米级沉积”J.Appl。
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M.Takai: "Laser Surface Processing of Thin Films for Micro Electronics Application" SPIE-The International Society for Optical Engineering(to be published).
M.Takai:“用于微电子应用的薄膜激光表面处理”SPIE-国际光学工程学会(待出版)。
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R.Mimura: "Development of a 200kV FIB System for Nondestructive Three Dimensional Surface Analysis" Nucl. Instr. and Methods. B85. 756-759 (1994)
R.Mimura:“用于无损三维表面分析的 200kV FIB 系统的开发”Nucl。
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M.Takai: "Nuclear Microprobe Development and Application to Microelectronics" Nucl. Instr. and Methods. B85. 664-675 (1994)
M.Takai:“核微探针的开发及其在微电子学中的应用”Nucl。
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H.Andoh: "Nanoscale Deposition from a Metal-Covered Scanning Tunneling Microscope Tip" J.Appl.Phys.(in press).
H.Andoh:“金属覆盖的扫描隧道显微镜尖端的纳米级沉积”J.Appl.Phys.(正在出版)。
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TAKAI Mikio其他文献

TAKAI Mikio的其他文献

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{{ truncateString('TAKAI Mikio', 18)}}的其他基金

Electron emission from pyroelectric crystal excited by laser light and its miniature X-ray source application
激光激发热释电晶体电子发射及其微型X射线源应用
  • 批准号:
    23360022
  • 财政年份:
    2011
  • 资助金额:
    $ 6.91万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Fabrication of Electron Source with Electron-Wave Interference by Nano Beam Induced Deposition Process
纳米束诱导沉积电子波干涉电子源的制作
  • 批准号:
    19206008
  • 财政年份:
    2007
  • 资助金额:
    $ 6.91万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Fabrication of Field Emitter Arrays Using Beam Assisted Processing and Their Stabilization
使用束辅助加工制造场发射器阵列及其稳定性
  • 批准号:
    12135205
  • 财政年份:
    2000
  • 资助金额:
    $ 6.91万
  • 项目类别:
    Grant-in-Aid for Scientific Research on Priority Areas
High Brightness Electron Source Array and Its Development to Vacuum Microelectronics (Summary)
高亮度电子源阵列及其在真空微电子领域的发展(综述)
  • 批准号:
    12135101
  • 财政年份:
    2000
  • 资助金额:
    $ 6.91万
  • 项目类别:
    Grant-in-Aid for Scientific Research on Priority Areas
Development of highly sensitive analysis technique for semiconductor process induced contamination impurities
开发半导体工艺引起的污染杂质的高灵敏度分析技术
  • 批准号:
    11694157
  • 财政年份:
    1999
  • 资助金额:
    $ 6.91万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Fabrication and Characterization of Vacuum Nano Electron Source by in-situ Beam Processing
原位束流加工真空纳米电子源的制备和表征
  • 批准号:
    10450138
  • 财政年份:
    1998
  • 资助金额:
    $ 6.91万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of Three Dimensional Nano Analysis Technique
三维纳米分析技术的发展
  • 批准号:
    08044148
  • 财政年份:
    1996
  • 资助金额:
    $ 6.91万
  • 项目类别:
    Grant-in-Aid for international Scientific Research
Development of Nanometer Ion Beam Processing Technology
纳米离子束加工技术的发展
  • 批准号:
    02044092
  • 财政年份:
    1990
  • 资助金额:
    $ 6.91万
  • 项目类别:
    Grant-in-Aid for international Scientific Research
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