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Fabrication and Characterization of Vacuum Nano Electron Source by in-situ Beam Processing

原位束流加工真空纳米电子源的制备和表征

基本信息

批准号：
10450138
负责人：
TAKAI Mikio
金额：
$ 7.87万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10450138/
关键词：
nanometer-sized electron sources vacuum micro electronics field emission array (FEA)in-situ beam processing focused ion beam (FIB)chemical reaction by electron beam dual beam process Fowler-Nordheim plots 電子ビーム支援科化学反応極微冷陰極電界放出電子源 /

项目摘要

Nanometer-sized electron sources for application to vacuum micro electronics, i.e., field emission array (FEA),have been fabricated using in-situ beam processing without a mask process. Gate opening with a diameter of about 100 nm down to 50 nm was fabricated using physical sputtering by a focused ion beam (FIB). A sharp Pt or carbon cathode pillar with a tip radius than 5 nm was fabricated using chemical reaction by electron beam irradiation in a flowing gas atmosphere. Characterization of both a single emitter and FEA was done by I-V characteristics and Fowler-Nordheim plots.Following results were obtained ;(1) In-Situ fabrication of nanometer-sized electron sourcesNanometer-sized electron sources or field emitters were fabricated using dual beam (FIB and electron beam) processing. Gate opening was fabricated by physical sputtering using a 30 keV Ga FIB. Metal cathodes were fabricated by chemical reaction using electron beam irradiation in a chemical gas atmosphere.(2) Fabrication of a field emitter without a mask processFEAs were fabricated and the dual beam process using FIB and electron beams was optimized. Field emission from FEAs fabricated by this technique was observed.(3) Optimization of nanometer-sized FEAsProcess parameters were optimized and feasibility of this technique for the fabrication of nanometer-sized FEAs was confirmed.

应用于真空微电子学的纳米级电子源，即场发射阵列（FEA），已经采用原位光束加工而不采用掩膜工艺。利用聚焦离子束物理溅射技术制备了直径从100 nm到50 nm的栅极开口。在流动气体环境中，利用电子束辐照化学反应制备了尖端半径大于5nm的Pt或碳尖阴极柱。通过I-V特性和Fowler-Nordheim图对单发射极和FEA进行了表征。得到以下结果：(1)原位制备纳米电子源采用双束（FIB和电子束）工艺制备纳米电子源或场发射体。利用30 keV的Ga FIB进行物理溅射制备栅极开口。利用电子束辐照在化学气体气氛中进行化学反应制备了金属阴极。(2)制备了无掩模场发射极，并对利用FIB和电子束的双光束工艺进行了优化。观察了用这种方法制备的FEAs的场发射。优化了工艺参数，验证了该工艺制备纳米FEAs的可行性。