Fabrication and Characterization of Vacuum Nano Electron Source by in-situ Beam Processing

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Nanometer-sized electron sources for application to vacuum micro electronics, i.e., field emission array (FEA),have been fabricated using in-situ beam processing without a mask process. Gate opening with a diameter of about 100 nm down to 50 nm was fabricated using physical sputtering by a focused ion beam (FIB). A sharp Pt or carbon cathode pillar with a tip radius than 5 nm was fabricated using chemical reaction by electron beam irradiation in a flowing gas atmosphere. Characterization of both a single emitter and FEA was done by I-V characteristics and Fowler-Nordheim plots.Following results were obtained ;(1) In-Situ fabrication of nanometer-sized electron sourcesNanometer-sized electron sources or field emitters were fabricated using dual beam (FIB and electron beam) processing. Gate opening was fabricated by physical sputtering using a 30 keV Ga FIB. Metal cathodes were fabricated by chemical reaction using electron beam irradiation in a chemical gas atmosphere.(2) Fabrication of a field emitter without a mask processFEAs were fabricated and the dual beam process using FIB and electron beams was optimized. Field emission from FEAs fabricated by this technique was observed.(3) Optimization of nanometer-sized FEAsProcess parameters were optimized and feasibility of this technique for the fabrication of nanometer-sized FEAs was confirmed.