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Fabrication of Field Emitter Arrays Using Beam Assisted Processing and Their Stabilization

Fabrication of Field Emitter Arrays Using Beam Assisted Processing and Their Stabilization
使用束辅助加工制造场发射器阵列及其稳定性
批准号:
12135205
负责人:
TAKAI Mikio
金额:
$21.44万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2003

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中文摘要
翻译
发展了一种利用聚焦电子束和束流(双束)结合金属有机气体制备纳米尺寸的场发射电子源及其阵列的工艺。基于PT的栅极和发射极结构以及绝缘Hayers已经制造了几到数百秒。这些纳米尺寸的发射体作为场发射体工作,发射电流高达1微安/尖端。只有通过电子诱导沉积工艺才能获得最小特征尺寸为10 nm的铂和绝缘层,从而实现了纳米尺寸的场发射及其阵列。利用电子束诱导工艺可以制作出纳米带隙发射体,用于未来对纳米带隙发射体发射电子的干扰实验。发展了一种用于Spindt型和Si型场发射体阵列的紫外激光清洗技术。波长为350 nm的激光辐照改善了电子发射,而可见光和/或更短波长(如300mN)的激光照射不能改善发射行为。研究发现,激光清洗可以消除场发射阵列中水组分的脱附,碳纳米管(CNT)阴极中的电子发射点数受紫外激光或低能电子照射的控制。紫外激光照射印刷碳纳米管阴极后,电子发射增强了4个数量级,并且在阳极上的荧光屏上观察到均匀的发射图案。碳纳米管阴极的工作真空度
英文摘要
A fabrication process of a nanometer-sized field emission electron source and its arrays using focused electron and ion beams (dual beams) with beam diameters of down to a few nanometers combined with metal-organic gas species has been developed. Pt based gate and emitter structures together with insulating hayers have been fabricated for a several to hundreds seconds. The nanometer-sized emitters worked as field emitters with an emission current of up to 1 uA/tip. A minimum feature size of down to 10 nm with Pt and insulating layer could be obtained only by electron-induced deposition processes, which realized a nanometer-sized field emitter and its arrays. A nanometer-gapped emitter could be fabricated using electron beam induced processes for future experiment on electron interference for emitted electrons from nanometer-gapped emitters.A laser cleaning technique using ultra-violet (UV) wavelength has been developed for Spindt-type and Si-type field emitter arrays. The laser irradiation with a wavelength of 350 nm resulted in improvement in electron emission, while visible and/or shorter-wavelength such as 300 mn did not improve the emission behavior. The desorption of water components was found to be removed from field emitter arrays by laser clearning.The number of electron emission site in carbon nanotube (CNT) cathodes was found to be controlled by UV laser or low energy electron irradiation. The UV laser irradiation to printed CNT cathodes resulted in the enhancement of electron emission by four orders of magnitude and a homogeneous emission pattern was observed at a phosphor screen on the anode. the working vacuum for CNT cathodes
期刊论文(116)
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会议论文
C.Ochiai: "Fabrication Process of Field Emitter Arrays Using Focused Ion and Electron Beam Induced Reaction"J.Vac.Sci.Technl.. B19(in press). (2001)
C.Ochiai:“使用聚焦离子和电子束诱导反应的场发射器阵列的制造过程”J.Vac.Sci.Technl.. B19(印刷中)。
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通讯作者:
T.Shiroishi, T.Sawada, A.Hosono, S.Nakata, Y.Kanazawa, M.Takai: "Low Temperature Growth of Carbon Nanotube by Thermal CVD with FeZrN Catalyst"J. Vac Sci. & Technol., in press. B. (2004)
T.Shiroishi、T.Sawada、A.Hosono、S.Nakata、Y.Kanazawa、M.Takai:“使用 FeZrN 催化剂通过热 CVD 低温生长碳纳米管”J。
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C.Ochai: "Fabrication Process of Field Emitter Arrays Using Focused Ion and Electron Beam Induced Reaction"J.Vac.Sci.Technl.. B19. 933-935 (2001)
C.Ochai:“使用聚焦离子和电子束诱导反应的场发射器阵列的制造过程”J.Vac.Sci.Technl.. B19。
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