Fabrication of Field Emitter Arrays Using Beam Assisted Processing and Their Stabilization

使用束辅助加工制造场发射器阵列及其稳定性

• 批准号: 12135205
• 负责人: TAKAI Mikio
• 金额: $ 21.44万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research on Priority Areas
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12135205/
• 关键词: nanometer-sized field emission electron source; cathode; dual beams; electron emission; field emitter array; UV laser cleaning; cabon nanotube (CNT); electron emission site; 電界放出電子源; 電子源の高輝度化; 電子源の安定化; FED; ディスプレイ; 陰極材料; 真空マイクロエレクトロニクス; 超微構

A fabrication process of a nanometer-sized field emission electron source and its arrays using focused electron and ion beams (dual beams) with beam diameters of down to a few nanometers combined with metal-organic gas species has been developed. Pt based gate and emitter structures together with insulating hayers have been fabricated for a several to hundreds seconds. The nanometer-sized emitters worked as field emitters with an emission current of up to 1 uA/tip. A minimum feature size of down to 10 nm with Pt and insulating layer could be obtained only by electron-induced deposition processes, which realized a nanometer-sized field emitter and its arrays. A nanometer-gapped emitter could be fabricated using electron beam induced processes for future experiment on electron interference for emitted electrons from nanometer-gapped emitters.A laser cleaning technique using ultra-violet (UV) wavelength has been developed for Spindt-type and Si-type field emitter arrays. The laser irradiation with a wavelength of 350 nm resulted in improvement in electron emission, while visible and/or shorter-wavelength such as 300 mn did not improve the emission behavior. The desorption of water components was found to be removed from field emitter arrays by laser clearning.The number of electron emission site in carbon nanotube (CNT) cathodes was found to be controlled by UV laser or low energy electron irradiation. The UV laser irradiation to printed CNT cathodes resulted in the enhancement of electron emission by four orders of magnitude and a homogeneous emission pattern was observed at a phosphor screen on the anode. the working vacuum for CNT cathodes

提出了一种利用聚焦电子束和离子束（双束）与金属有机气体相结合的纳米级场发射电子源及其阵列的制造工艺。铂基栅极和发射极结构连同绝缘海耶已经制造了几到几百秒。纳米尺寸的发射体作为场发射体工作，发射电流高达1 μ A/尖端。只有通过电子诱导沉积工艺才能获得最小特征尺寸为10 nm的Pt和绝缘层，从而实现了纳米尺寸的场发射体及其阵列。为了进一步开展纳米间隙发射极的电子干涉实验，利用电子束诱导工艺制备了纳米间隙发射极，并针对Spindt型和Si型场发射极阵列，提出了一种紫外激光清洗技术。波长为350 nm的激光照射导致电子发射的改善，而可见光和/或更短波长如300 nm的激光照射没有改善发射行为。通过激光清洗去除了场发射阵列中的水分，并通过紫外激光或低能电子辐照控制了碳纳米管阴极中电子发射点的数量。印刷的CNT阴极的UV激光照射导致电子发射的增强四个数量级和均匀的发射模式被观察到在阳极上的荧光屏。CNT阴极的工作真空

项目成果

K.Murakami: "Fabrication of Nano Electron Source Using Beam Assisted Process"to be published in Jpn. J. Appl. Phys.. (In press). (2003)

K.Murakami：“使用束辅助工艺制造纳米电子源”将在日本出版。

T.Shiroishi, T.Sawada, A.Hosono, S.Nakata, Y.Kanazawa, M.Takai: "Low Temperature Growth of Carbon Nanotube by Thermal CVD with FeZrN Catalyst"J. Vac Sci. & Technol., in press. B. (2004)

T.Shiroishi、T.Sawada、A.Hosono、S.Nakata、Y.Kanazawa、M.Takai：“使用 FeZrN 催化剂通过热 CVD 低温生长碳纳米管”J。

C.Ochai: "Fabrication Process of Field Emitter Arrays Using Focused Ion and Electron Beam Induced Reaction"J.Vac.Sci.Technl.. B19. 933-935 (2001)

C.Ochai：“使用聚焦离子和电子束诱导反应的场发射器阵列的制造过程”J.Vac.Sci.Technl.. B19。

C.Ochiai: "Fabrication Process of Field Emitter Arrays Using Focused Ion and Electron Beam Induced Reaction"J.Vac.Sci.Technl.. B19(in press). (2001)

C.Ochiai：“使用聚焦离子和电子束诱导反应的场发射器阵列的制造过程”J.Vac.Sci.Technl.. B19（印刷中）。

C.Ochiai: "Wedge Emitter Fabrication Using Focused Ion Beam"J.Vac.Sci.Technl.. B19,No.3. 904-906 (2001)

C.Ochiai：“使用聚焦离子束制造楔形发射器”J.Vac.Sci.Technl.. B19，No.3。