Development of Three Dimensional Nano Analysis Technique
Development of Three Dimensional Nano Analysis Technique
批准号:
08044148
负责人:
TAKAI Mikio
金额:
$8.9万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for international Scientific Research
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1998
中文摘要
具有几十纳米尺寸的结构的制造在应用于下一代超大规模集成(ULSI)电路和介观领域中的新器件的处理中引起了极大的兴趣。因此,开展二维和三维非破坏性分析对实现这类结构是非常重要的。大坂大学和Fraunhofer Institut fuer Integrierte Schaltungen之间的双边合作已经完成,以建立具有纳米分辨率的三维分析技术。大坂大学开发了一种使用聚焦离子束进行三维分析的离子微探针(或核微探针)技术,并与弗劳恩霍夫研究所使用相同样品的破坏性分析技术(如TOF-SIMS)进行了比较。离子微探针可以在不需要材料去除技术的情况下提供样品材料的化学计量比、结晶度和杂质分布。三维结构,如真空微电子器件和量子效应器件的基本结构,在大坂大学制造,已成功地使用非破坏性和破坏性技术进行了分析。证明了本研究所开发的技术的优势.在Fraunhofer研究所使用光束诱导化学和物理过程制造的微型结构可以使用开发的技术以80 nm的分辨率进行分析。利用离子微探针开发了材料化学计量比和杂质分布的二维和三维映射(层析成像)技术。
英文摘要
Fabrication of structures with a size of a few tens of nanometer has drawn much interest in the application to the processing of a future generation of ultra large scale integration (ULSI) circuits and new devices in the field of mesoscopic area. Therefore development of non-destructive two and three dimensional analyses is quite important to realize such structures. A bilateral collaboration between Osaka University and Fraunhofer Institut fuer Integrierte Schaltungen has been performed to establish a three dimensional analysis technique with a nanometer resolution. An ion micro probe (or nuclear micro probe) technique using a focused ion beam for three dimensional analysis has been developed at Osaka University and compared with the destructive analysis technique such as TOF-SIMS being used at Fraunhofer Institut using the same samples. The ion micro probe could provide stoichiometry, crystallinity, and impurity distribution in a sample material without material removal techniques.Following results were obtained :1. Three dimensional structures such as vacuum micro electronics devices and basic structures for quantum effect devices, fabricated at Osaka University, have successfully been analyzed using non-destructive and destructive techniques. Advantage of the techniques developed in this study was demonstrated.2. Miniature structures fabricated at Fraunhofer Institute using beam induced chemical and physical processes could have been analyzed with a resolution of 80 nm using the techniques developed.3. Two and three dimensional mapping (tomography) techniques of material stoichiometry and impurity distribution have been developed using ion micro probes.
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Y.K.Park: "Microanalysis of Impurity Con tomingtion in Maskiossly Etched Avea using FIB" Jpn.J.Appl.Pluys.36. 7712-7716 (1997)
Y.K.Park:“使用 FIB 对 Maskiossly 蚀刻的 Avea 中的杂质成分进行微量分析”Jpn.J.Appl.Pluys.36。
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M.Takai: "Applications of Nuclear Microprobes in Semiconductor Industry" Nucl.Instr.and Meth.B113. 330-335 (1996)
M.Takai:“核微探针在半导体工业中的应用”Nucl.Instr.and Meth.B113。
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T.Kishimoto: "Control of Carrier Collection Efficiency in n+p Diode with Retrograde Well and Epitaxial Layers" Jan.J.Appl.Phys.(in press).
T.Kishimoto:“具有逆行阱和外延层的 np 二极管中载流子收集效率的控制”Jan.J.Appl.Phys.(印刷中)。
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M.Takai: "Multi-Dimensional Micro Analysis of Semiconductor Device Structures Using Ion Microprobe" Housyasen. 23. 15-23 (1997)
M.Takai:“使用离子微探针对半导体器件结构进行多维微观分析”Housyasen。
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Y.K.Park: "Investigation of Cu Films by Focused Ion Beam Induced Deposition Using Nuclear Microprobe" to be published in Nucl.Instr.and Methods B.
Y.K.Park:“Investigation of Cu Films by Focused Ion Beam Induced Deposition using Nuclear Microprobe”将发表在 Nucl.Instr.andMethods B 上。
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共 60 条
Electron emission from pyroelectric crystal excited by laser light and its miniature X-ray source application
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批准号:23360022
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$12.4万
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财政年份:2011
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依托单位:
Fabrication of Electron Source with Electron-Wave Interference by Nano Beam Induced Deposition Process
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财政年份:2007
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Fabrication of Field Emitter Arrays Using Beam Assisted Processing and Their Stabilization
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批准号:12135205
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财政年份:2000
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High Brightness Electron Source Array and Its Development to Vacuum Microelectronics (Summary)
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$3.58万
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财政年份:2000
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负责人:TAKAI Mikio
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Development of highly sensitive analysis technique for semiconductor process induced contamination impurities
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批准号:11694157
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$9.91万
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财政年份:1999
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依托单位:
Fabrication and Characterization of Vacuum Nano Electron Source by in-situ Beam Processing
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批准号:10450138
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.87万
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财政年份:1998
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负责人:TAKAI Mikio
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依托单位:
Fabrication of Nanometer Structure and Its Application
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批准号:06044139
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项目类别:Grant-in-Aid for Overseas Scientific Survey.
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资助金额:$6.91万
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财政年份:1994
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负责人:TAKAI Mikio
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依托单位:
Development of Nanometer Ion Beam Processing Technology
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批准号:02044092
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项目类别:Grant-in-Aid for international Scientific Research
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财政年份:1990
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负责人:TAKAI Mikio
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依托单位:
海外基金