Control of spin transport in carbon nanotubes

在带有金属接触的碳纳米管器件中，我们得到了纳米管的磁隧穿谱。得到了两个重要的结果：尽管本征非掺杂纳米管的费米能处于零能级，但该纳米管的费米能应达到更高的能带。纳米管的电性状态被认为是理想的，甚至是坚韧的，在器件制造过程中必须对纳米管进行高度损伤。此外，我们估计了两个排列的纳米管之间的静态管内电容耦合，并模拟了耦合纳米管系统中的单电子隧穿输运。

In a carbon nanotube device with metallic contacts, we got magnetic tunneling spectroscopy of the nanotube. Two important results are obtained ; The Fermi energy of the nanotube is supposed to be reached to higher energy band although an intrinsic non-doped nanotube has a Fermi energy at the zero level. The electric state of the nanotube is supposed to be ideal even tough the nanotube must be highly damaged in the device fabrication process. Furthermore, we estimated static internanotube capacitive coupling between two aligned nanotubes, and simulated single electron tunneling transport in the coupled nanotube system.