Control of spin transport in carbon nanotubes

在具有金属触点的碳纳米管器件中，我们得到了碳纳米管的磁隧穿光谱。得到了两个重要的结果；虽然非掺杂纳米管的费米能处于零能级，但其费米能应该达到更高的能带。尽管纳米管在器件制造过程中必须受到高度破坏，但其电学状态仍被认为是理想的。此外，我们估计了两个排列的纳米管之间的静态电容耦合，并模拟了耦合纳米管系统中的单电子隧穿输运。

In a carbon nanotube device with metallic contacts, we got magnetic tunneling spectroscopy of the nanotube. Two important results are obtained ; The Fermi energy of the nanotube is supposed to be reached to higher energy band although an intrinsic non-doped nanotube has a Fermi energy at the zero level. The electric state of the nanotube is supposed to be ideal even tough the nanotube must be highly damaged in the device fabrication process. Furthermore, we estimated static internanotube capacitive coupling between two aligned nanotubes, and simulated single electron tunneling transport in the coupled nanotube system.