Control of spin transport in carbon nanotubes

在金属接触的碳纳米管器件中，我们得到了碳纳米管的磁隧道谱。得到了两个重要的结果：尽管本征非掺杂纳米管的费米能在零能级，但纳米管的费米能应该达到更高的能带。纳米管的电状态应该是理想的，即使在器件制造过程中纳米管必须受到高度损伤。此外，我们估计了两个排列的纳米管之间的静态电容耦合，并模拟了耦合纳米管系统中的单电子隧穿输运。

In a carbon nanotube device with metallic contacts, we got magnetic tunneling spectroscopy of the nanotube. Two important results are obtained ; The Fermi energy of the nanotube is supposed to be reached to higher energy band although an intrinsic non-doped nanotube has a Fermi energy at the zero level. The electric state of the nanotube is supposed to be ideal even tough the nanotube must be highly damaged in the device fabrication process. Furthermore, we estimated static internanotube capacitive coupling between two aligned nanotubes, and simulated single electron tunneling transport in the coupled nanotube system.