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Development of deep UV light emitting devices using nano-technology and the application

纳米技术深紫外发光器件的研制及应用

基本信息

批准号：
15GS0207
负责人：
AOYAGI Yoshinobu
金额：
$ 303.93万
依托单位：
Ritsumeikan University (2007)Tokyo Institute of Technology (2003-2006)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Creative Scientific Research
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15GS0207/
关键词：
deep UV LED two light beam in-situ monitoring system vertical type Deep UV LED hetero nonlinear photonic crystal anti-surfactant method flax crystal growth technique boron oxide material temperature modulation technique 縦型深紫外LED 良質AlGaN

项目摘要

In this project we have proposed several new technologies on development of solid state high power deep UV (DUV) light emitting devices (LEDs), which could essentially solve a lot of environmental problems concerned by many people nowadays, and have proven the real possibility of our proposal toward the high power DUV light emitting devices. Epitaxial crystal growth procedures have fundamentally been clarified by some scientific approaches. Highly-doping technologies for p-type widegap semiconductors and highly-efficient nonlinear photonic crystals have been developed. Our results are as follows:1.Epitaxial growth mechanism of A1GaN-based materials and hetero structures has scientifically been revealed by a newly developed in-situ monitoring system instead of previous experiential approach.2.Development of vertical-type DUV LEDs emitting at 280 nm has been succeeded, which promise future high-power operation.3.InAlGaN quantum dot DUV LEDs have firstly been operated at 355nm.4.Extremely enhanced SHG has been generated by newly developed hetero nonlinear photonic crystals. The efficiency was more than 300 times compared with balk nonlinear materials. DUV laser was operated at 325 nm by this technology.5.Epitaxial growth of new nonlinear-photonic-crystal thin films (RECa4O(BO3)3RECOB) has been succeeded by flax crystal growth technique.6.P-type doping of ZnO materials has been accomplished by introducing growth temperature modulation with combinatorial technique.These results are published in about 50 original papers and presented in international conference of more than 65 including 8 invited papers. About 75 papers are presented in domestic conference. Patents obtained or required are 13. Typical examples for each are listed in following sheets

在本计画中，我们提出了几项固态高功率深紫外发光元件的新技术，可以从根本上解决目前许多人所关心的环境问题，并证明我们的方案对于高功率深紫外发光元件的真实的可能性。外延晶体生长过程已经通过一些科学方法从根本上阐明。p型宽禁带半导体和高效非线性光子晶体的高掺杂技术已经发展起来。主要研究结果如下：1.利用新开发的原位监测系统，科学地揭示了AlGaN基材料和异质结构的外延生长机理; 2.成功研制了280 nm垂直型深紫外发光二极管，有望实现未来的大功率工作; 3.首次实现了355 nm波长的InAlGaN量子点深紫外发光二极管; 4.利用新开发的异质非线性光子晶体产生了极大增强的二次谐波。与一般非线性材料相比，效率提高了300倍以上。利用该技术实现了325 nm深紫外激光输出。5.新型非线性光子晶体薄膜的外延生长（RECa_4O（BO_3）_3RECOB）的晶体生长工艺，并采用亚麻籽晶生长技术进行了改进。通过引入生长温度调制和组合技术，实现了ZnO材料的掺杂，发表了约50篇原创论文，并在65多个国际会议上发表包括8篇特邀论文。在国内会议上发表论文75篇。获得或需要的专利有13项。下表中列出了每种方法的典型示例