Development of deep UV light emitting devices using nano-technology and the application
Development of deep UV light emitting devices using nano-technology and the application
批准号:
15GS0207
负责人:
AOYAGI Yoshinobu
金额:
$303.93万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Creative Scientific Research
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2007
中文摘要
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英文摘要
In this project we have proposed several new technologies on development of solid state high power deep UV (DUV) light emitting devices (LEDs), which could essentially solve a lot of environmental problems concerned by many people nowadays, and have proven the real possibility of our proposal toward the high power DUV light emitting devices. Epitaxial crystal growth procedures have fundamentally been clarified by some scientific approaches. Highly-doping technologies for p-type widegap semiconductors and highly-efficient nonlinear photonic crystals have been developed. Our results are as follows:1.Epitaxial growth mechanism of A1GaN-based materials and hetero structures has scientifically been revealed by a newly developed in-situ monitoring system instead of previous experiential approach.2.Development of vertical-type DUV LEDs emitting at 280 nm has been succeeded, which promise future high-power operation.3.InAlGaN quantum dot DUV LEDs have firstly been operated at 355nm.4.Extremely enhanced SHG has been generated by newly developed hetero nonlinear photonic crystals. The efficiency was more than 300 times compared with balk nonlinear materials. DUV laser was operated at 325 nm by this technology.5.Epitaxial growth of new nonlinear-photonic-crystal thin films (RECa4O(BO3)3RECOB) has been succeeded by flax crystal growth technique.6.P-type doping of ZnO materials has been accomplished by introducing growth temperature modulation with combinatorial technique.These results are published in about 50 original papers and presented in international conference of more than 65 including 8 invited papers. About 75 papers are presented in domestic conference. Patents obtained or required are 13. Typical examples for each are listed in following sheets
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AlGaN系深紫外発光素子およびその製造方法
AlGaN基深紫外发光器件及其制造方法
DOI:
--
发表时间:
2005
期刊:
影响因子:
--
作者:
[]
通讯作者:
発明の名称:蛍光体とその製造方法
发明名称:荧光粉及其制造方法
DOI:
--
发表时间:
2005
期刊:
影响因子:
--
作者:
[]
通讯作者:
Quaternary InAlGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by an anti-surfactant method
反表面活性剂法制备335 nm四元InAlGaN量子点紫外发光二极管
DOI:
--
发表时间:
2008
期刊:
Phys. Stat. Solidi QDQ0760
影响因子:
--
作者:
[Nakamura, T, Mima, K, H. Hirayama]
通讯作者:
H. Hirayama
TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN template
GaN模板上抗表面活性剂处理形成的界面层的TEM分析
DOI:
--
发表时间:
2007
期刊:
J. Crystal Growth 298
影响因子:
--
作者:
[Nagatomo, H. ; Johzaki, T. ; Nakamura, T. ; Sakagami, H. ; Sunahara, A. ; Mima, K., M.Yamashita et al., N. Kuwano]
通讯作者:
N. Kuwano
Improvement of crystalline quality of N-polar MN layers on c-plane sapphire by low-pressure flow-modulated MOCVD
低压流量调制 MOCVD 提高 c 面蓝宝石上 N 极性 MN 层的结晶质量
DOI:
--
发表时间:
2007
期刊:
J. Crystal. Growth 298
影响因子:
--
作者:
[Masanari Okuno, Satoshi Hayashi, Hiro-o Hamaguchi, A. Sato, 井庭崇, M.Yamashita et al., M. Takeuchi]
通讯作者:
M. Takeuchi
共 114 条
Development of new high power deep UV light emitting device
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批准号:22246051
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$31.78万
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财政年份:2010
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负责人:AOYAGI Yoshinobu
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依托单位:
Control of spin transport in carbon nanotubes
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批准号:12305003
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$28.83万
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财政年份:2000
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负责人:AOYAGI Yoshinobu
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依托单位:
Fabrication of Photonic Crystals with Spatial Phase Control Regions and their applications to Optical Devices
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批准号:10210206
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas (B)
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资助金额:$39.62万
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财政年份:1998
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负责人:AOYAGI Yoshinobu
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依托单位:
Development and Application of Bule Light-Emitting Nanocrystalline Si Materials
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批准号:08455152
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.99万
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财政年份:1996
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负责人:AOYAGI Yoshinobu
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依托单位:
Development of reactively controlled super-sonic nozzle beam epitaxial growth technique
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批准号:07505013
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$5.12万
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财政年份:1995
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负责人:AOYAGI Yoshinobu
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依托单位:
Short pulse Supersonic Beam Epitaxy
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批准号:06452115
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.93万
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财政年份:1994
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负责人:AOYAGI Yoshinobu
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依托单位:
Developement of pattern-defined-epitaxial growth employing laser MOCVD and its application to new optoelectric devices
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批准号:61460071
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.03万
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财政年份:1986
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负责人:AOYAGI Yoshinobu
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依托单位: