Development of deep UV light emitting devices using nano-technology and the application
Development of deep UV light emitting devices using nano-technology and the application
批准号:
15GS0207
负责人:
AOYAGI Yoshinobu
金额:
$303.93万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Creative Scientific Research
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2007
中文摘要
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英文摘要
In this project we have proposed several new technologies on development of solid state high power deep UV (DUV) light emitting devices (LEDs), which could essentially solve a lot of environmental problems concerned by many people nowadays, and have proven the real possibility of our proposal toward the high power DUV light emitting devices. Epitaxial crystal growth procedures have fundamentally been clarified by some scientific approaches. Highly-doping technologies for p-type widegap semiconductors and highly-efficient nonlinear photonic crystals have been developed. Our results are as follows:1.Epitaxial growth mechanism of A1GaN-based materials and hetero structures has scientifically been revealed by a newly developed in-situ monitoring system instead of previous experiential approach.2.Development of vertical-type DUV LEDs emitting at 280 nm has been succeeded, which promise future high-power operation.3.InAlGaN quantum dot DUV LEDs have firstly been operated at 355nm.4.Extremely enhanced SHG has been generated by newly developed hetero nonlinear photonic crystals. The efficiency was more than 300 times compared with balk nonlinear materials. DUV laser was operated at 325 nm by this technology.5.Epitaxial growth of new nonlinear-photonic-crystal thin films (RECa4O(BO3)3RECOB) has been succeeded by flax crystal growth technique.6.P-type doping of ZnO materials has been accomplished by introducing growth temperature modulation with combinatorial technique.These results are published in about 50 original papers and presented in international conference of more than 65 including 8 invited papers. About 75 papers are presented in domestic conference. Patents obtained or required are 13. Typical examples for each are listed in following sheets
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Remarkable Breakdown Voltage Enhancement in A1GaN Channel HEMTs operation of A1GaN channel high electron mobility transistors with sufficiently low resistive source/drain contact formed by Si ion implantation
通过 Si 离子注入形成具有足够低电阻的源极/漏极接触的 A1GaN 沟道高电子迁移率晶体管的 A1GaN 沟道 HEMT 操作中击穿电压显着增强
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[T.Asano, B.-S.Song, S.Noda, 中西祥人, A.Yamasaki et al., 〓, H.Sumiya, T. Nanjo,]
通讯作者:
T. Nanjo,
終端バリア層厚制御によるA1GaN系深紫外LEDの注入効率の向上
通过控制终端势垒层的厚度提高AlGaN基深紫外LED的注入效率
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[Nagao, K., Takahashi, K., Hanada, K., Kioka, N., Matsuo, M., and Ueda, K., 武内 道一]
通讯作者:
武内 道一
Characteristics of Two Dimensional Nonlinear Photonic Crystals and those applications, (invited talk)
二维非线性光子晶体的特性及其应用(特邀报告)
DOI:
--
发表时间:
2005
期刊:
影响因子:
--
作者:
[Sakai, H., Tanaka, Y., Tanaka, M., Ban, N., Yamada, K., Matsumura, Y., Kita, T., and Inagaki, N., S. Inoue]
通讯作者:
S. Inoue
'「次世代エレクトロニクス薄膜技術」、第6章コンビナトリアルテクノロジー集積化薄膜技術による材料開発の革新
“下一代电子薄膜技术”,第 6 章通过组合技术集成薄膜技术进行材料开发创新
DOI:
--
发表时间:
2003
期刊:
株式会社シーエムシー出版
影响因子:
--
作者:
[A. Sato, et al, 松本 祐司]
通讯作者:
松本 祐司
Quaternary InAlGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by an anti-surfactant method
反表面活性剂法制备335 nm四元InAlGaN量子点紫外发光二极管
DOI:
--
发表时间:
2008
期刊:
Phys. Stat. Solidi QDQ0760
影响因子:
--
作者:
[Nakamura, T, Mima, K, H. Hirayama]
通讯作者:
H. Hirayama
共 114 条
Development of new high power deep UV light emitting device
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批准号:22246051
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$31.78万
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财政年份:2010
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负责人:AOYAGI Yoshinobu
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依托单位:
Control of spin transport in carbon nanotubes
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批准号:12305003
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$28.83万
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财政年份:2000
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负责人:AOYAGI Yoshinobu
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依托单位:
Fabrication of Photonic Crystals with Spatial Phase Control Regions and their applications to Optical Devices
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批准号:10210206
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas (B)
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资助金额:$39.62万
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财政年份:1998
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负责人:AOYAGI Yoshinobu
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依托单位:
Development and Application of Bule Light-Emitting Nanocrystalline Si Materials
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批准号:08455152
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.99万
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财政年份:1996
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负责人:AOYAGI Yoshinobu
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依托单位:
Development of reactively controlled super-sonic nozzle beam epitaxial growth technique
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批准号:07505013
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$5.12万
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财政年份:1995
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负责人:AOYAGI Yoshinobu
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依托单位:
Short pulse Supersonic Beam Epitaxy
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批准号:06452115
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.93万
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财政年份:1994
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负责人:AOYAGI Yoshinobu
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依托单位:
Developement of pattern-defined-epitaxial growth employing laser MOCVD and its application to new optoelectric devices
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批准号:61460071
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.03万
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财政年份:1986
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负责人:AOYAGI Yoshinobu
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依托单位: