Development of deep UV light emitting devices using nano-technology and the application

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In this project we have proposed several new technologies on development of solid state high power deep UV (DUV) light emitting devices (LEDs), which could essentially solve a lot of environmental problems concerned by many people nowadays, and have proven the real possibility of our proposal toward the high power DUV light emitting devices. Epitaxial crystal growth procedures have fundamentally been clarified by some scientific approaches. Highly-doping technologies for p-type widegap semiconductors and highly-efficient nonlinear photonic crystals have been developed. Our results are as follows:1.Epitaxial growth mechanism of A1GaN-based materials and hetero structures has scientifically been revealed by a newly developed in-situ monitoring system instead of previous experiential approach.2.Development of vertical-type DUV LEDs emitting at 280 nm has been succeeded, which promise future high-power operation.3.InAlGaN quantum dot DUV LEDs have firstly been operated at 355nm.4.Extremely enhanced SHG has been generated by newly developed hetero nonlinear photonic crystals. The efficiency was more than 300 times compared with balk nonlinear materials. DUV laser was operated at 325 nm by this technology.5.Epitaxial growth of new nonlinear-photonic-crystal thin films (RECa4O(BO3)3RECOB) has been succeeded by flax crystal growth technique.6.P-type doping of ZnO materials has been accomplished by introducing growth temperature modulation with combinatorial technique.These results are published in about 50 original papers and presented in international conference of more than 65 including 8 invited papers. About 75 papers are presented in domestic conference. Patents obtained or required are 13. Typical examples for each are listed in following sheets