Short pulse Supersonic Beam Epitaxy

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A new technique of crystal growth, Short pulse Supersonic Beam Epitaxy, has been developed for overcoming the limitation of conventional crystal growth technique, by which ultra fine control of crystal growth is realized.It is well-known that fundamental processes in epitaxial crystal growth are separated basically into four processes, that is, feeding of source gas, the migration, the decomposition and the desorption.However, each of these processes can not be controlled in conventional epitaxial technology, though control of each process is essential for the ultra fine control of epitaxial growth.In the short pulse supersonic beam epitaxy, the source gas has high kinetic energy of a few eV,which is about 30 times higher than the kinetic energy of source gas in conventional crystal growth. This high kinetic energy of source gas makes it possible to enhance and control the surface migration of source gas, the decomposition and the desorption which was impossible in conventional technique.In this study we succeeded in(1) the development of short pulse supersonic beam epitaxy system and the epitaxial growth of GaAs,(2) large reduction of carbon incorporation into epitaxial layr by enhancing the decomposition velocity of Trimethyl Ga on the surface by introducing source gas having high kinetic energy.(3) ultra fine control of epitaxial growth rate of 0.1 monolayr/pulse.