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Short pulse Supersonic Beam Epitaxy

短脉冲超声束外延

基本信息

批准号：
06452115
负责人：
AOYAGI Yoshinobu
金额：
$ 4.93万
依托单位：
THE INSTITUTE OF PHYSICAL AND CHEMICAL RESEARCH (RIKEN)
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06452115/
关键词：
Short pulse supersonic beam epitaxy Surface processes Control of surface process Controllability of epitaxial growth Supersonic beam Epitaxial crystal growth High kinetic energy Ultra-fine controlled epitaxial growth 短パルス超音速ノズルビームエピタキシ-法 /

项目摘要

A new technique of crystal growth, Short pulse Supersonic Beam Epitaxy, has been developed for overcoming the limitation of conventional crystal growth technique, by which ultra fine control of crystal growth is realized.It is well-known that fundamental processes in epitaxial crystal growth are separated basically into four processes, that is, feeding of source gas, the migration, the decomposition and the desorption.However, each of these processes can not be controlled in conventional epitaxial technology, though control of each process is essential for the ultra fine control of epitaxial growth.In the short pulse supersonic beam epitaxy, the source gas has high kinetic energy of a few eV,which is about 30 times higher than the kinetic energy of source gas in conventional crystal growth. This high kinetic energy of source gas makes it possible to enhance and control the surface migration of source gas, the decomposition and the desorption which was impossible in conventional technique.In this study we succeeded in(1) the development of short pulse supersonic beam epitaxy system and the epitaxial growth of GaAs,(2) large reduction of carbon incorporation into epitaxial layr by enhancing the decomposition velocity of Trimethyl Ga on the surface by introducing source gas having high kinetic energy.(3) ultra fine control of epitaxial growth rate of 0.1 monolayr/pulse.

短脉冲超声束外延晶体生长新技术是为了克服传统晶体生长技术的局限性而发展起来的，通过该技术可以实现晶体生长的超精细控制。众所周知，外延晶体生长的基本过程基本上分为四个过程，即源气的通入、迁移、分解和解吸。然而，每个过程都无法控制。在传统的外延技术中，虽然外延生长的超精细控制需要对各个过程的控制，但在短脉冲超声束外延中，源气体具有数eV的高动能，比传统晶体生长中源气体的动能高出约30倍。源气的高动能使得增强和控制源气的表面迁移、分解和解吸成为可能，这在传统技术中是不可能的。在这项研究中，我们成功地（1）开发了短脉冲超声束外延系统和GaAs的外延生长，（2）通过提高表面上三甲基Ga的分解速度，大大减少了外延层中的碳掺入引入高动能源气体。(3)超精细控制外延生长速率0.1单层/脉冲。