Development of new high power deep UV light emitting device

介绍了一种动态控制的微等离子体激励氮化铝镓深紫外光(DUV)发光器件。该器件在任何所需波长提供高功率DUV发射，并允许扩大发射区域，如等离子显示面板，以便于低成本制造。器件制造既不需要p-n结，也不需要电脱触点。我们从平均输出功率为50 mW的AlGaN量子阱中制备了直径为2英寸的晶片大小的MIPE特定波长的DUV发射器。我们还可以用蓝宝石晶片和1m×5m板式DUV发射器制造直径6英寸的DUV发射器。

A dynamically-controlled micro-plasma-excited (MIPE) aluminum gallium nitride deepultraviolet (DUV) light-emitting device is demonstrated. This device provides high-powerDUV emission at any desired wavelength, and allows enlargement of emission areas likeplasma display panels for easy, low-cost fabrication. Neither p-n junctions nor electrodecontacts are required for device fabrication. We fabricated 2-inch diameter wafer-sizeMIPE emitters of DUV light at specific wavelengths from AlGaN quantum wells with 50 mWaverage output power. We can also fabricate 6-inch diameter DUV emitters using sapphirewafers and 1 m×5 m panel-type DUV emitters.