Development of new high power deep UV light emitting device

介绍了一种动态控制的微等离子体激发氮化铝镓深紫外发光器件。该器件可在任何波长下提供高功率DUV发射，并允许像等离子体显示面板一样扩大发射面积，以便于低成本制造。器件制造既不需要p-n结，也不需要电接触。我们从AlGaN量子威尔斯阱中制备了直径为2英寸的MIPE发射器，具有50 mW的平均输出功率。我们还可以使用半导体晶片和1 m×5 m平板型深紫外发射器制造6英寸直径的深紫外发射器。

A dynamically-controlled micro-plasma-excited (MIPE) aluminum gallium nitride deepultraviolet (DUV) light-emitting device is demonstrated. This device provides high-powerDUV emission at any desired wavelength, and allows enlargement of emission areas likeplasma display panels for easy, low-cost fabrication. Neither p-n junctions nor electrodecontacts are required for device fabrication. We fabricated 2-inch diameter wafer-sizeMIPE emitters of DUV light at specific wavelengths from AlGaN quantum wells with 50 mWaverage output power. We can also fabricate 6-inch diameter DUV emitters using sapphirewafers and 1 m×5 m panel-type DUV emitters.