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Development and Application of Bule Light-Emitting Nanocrystalline Si Materials

蓝光纳米晶硅材料的开发与应用

基本信息

批准号：
08455152
负责人：
AOYAGI Yoshinobu
金额：
$ 4.99万
依托单位：
The Institute of Physical and Chemical Research (RIKEN)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455152/
关键词：
nanocrystalline Si blue light emission quantum size effect Si quantum dot direct transition Er all-Si laser optical communication

项目摘要

In Si nanostructures, quantum size effects are expected to give rise to new optical and electrical properties to replace present materials. The motivation of this study is to develop such new materials and new devices. Nanocrystalline Si (nc-Si) provides a way to fabricate Si into am scale. We have developed a successful process to fabricate nc-Si with controllable crystallite sizes and demonstrated a blue light emission from nc-Si at room temperature. Main results of this project are shown in bellow.(1).Size-dependent blue light emission from nc-SiSize control of Si nanocrystallites formed in a-Si matrix is achieved by using Er as a nucleation center. We have fabricated a series of nc-Si samples with size from 3 nm to 10 am. The smallest crystallite size was 2.7 nm, a Si dot including .-l000 atoms. The nc-Si layers are homogeneous both in the crystallite size and in the optoelectronic properties and show a blue emission band and a sharp peak at 1.54mum which is caused by intra-shell t … More ransitions in Er atoms up to room temperature. We showed that the blue emission shift to higher energies with decreasing size. The value of the shift is in good agreement with the absorption data and could be explained by a novel quantum size effect.(2).First evidence of quantum size effect in ne-SiBy controlling the nanocrystallite size of nc-Si, we demonstrated that both the absorption and reflection spectra of nc-Si shift to higher energy side with decreasing crystallite size. The shift was well explained by the quantum size effect which originates direct transitions in the indirect semiconductor Si. The nc-Si is a promising material with size-tunable optical and electronic properties.(3).A new model of nc-Si/a-Si quantum dot systemWe proposed a new model of order (nc-Si phase)/disorder (a-Si phase) quantum dots system to understand the size effect of electrons in nc-Si materials. A theoretical calculation indicates that direct transitions enhanced by a modification of k-selection rules due to the size reduction result in the blue light emission, Both the absorption and reflection spectra calculated by the proposed model show size effect and are in good agreement with our experimental results.(4).An Er-doped nc-Si laser operated at room temperatureWe have fabricated Er-doped nc-Si waveguides on Si substrates and demonstrated a stimulated emission at 1.54 .tm at room temperature under optical pumping. This is the first breakthrough of realizing an all-Si laser. Less

在硅纳米结构中，量子尺寸效应有望产生新的光学和电学性质，以取代现有的材料。本研究的动机是开发这种新材料和新器件。纳米晶Si（nc-Si）为将Si制备成纳米尺度提供了一种途径。我们已经开发出一种成功的工艺来制备具有可控晶粒尺寸的nc-Si，并在室温下展示了nc-Si的蓝光发射。本项目的主要成果如下。（1）.通过使用Er作为成核中心，实现了在a-Si基质中形成的Si纳米晶体的尺寸控制的nc-Si的尺寸依赖的蓝光发射。制备了一系列尺寸从3 nm到10 nm的nc-Si样品。最小的微晶尺寸为2.7 nm，其中Si点包括：一千个原子。nc-Si层的晶粒尺寸和光电性能都是均匀的，并显示出蓝色发射带和1.54 μ m的尖锐峰，这是由壳层内的热膨胀引起的。 ...更多信息在室温下的Er原子的跃迁。我们发现，随着尺寸的减小，蓝光发射向更高的能量移动。位移的值与吸收数据吻合得很好，可以用一种新的量子尺寸效应来解释。（2）nc-Si中量子尺寸效应的首次发现通过控制nc-Si的纳米微晶尺寸，我们发现nc-Si的吸收光谱和反射光谱都随着微晶尺寸的减小而向高能侧移动。这一转变可以用间接半导体Si中直接跃迁的量子尺寸效应来解释。纳米硅是一种具有尺寸可调的光学和电学性质的有前途的材料。(3).A nc-Si/a-Si量子点系统的新模型我们提出了一个新的有序（nc-Si相）/无序（a-Si相）量子点系统模型来理解nc-Si材料中电子的尺寸效应。理论计算表明，由于尺寸减小，直接跃迁被k选择规则的修正所增强，从而导致蓝光发射。由该模型计算的吸收和反射光谱都显示出尺寸效应，并与实验结果符合得很好。（4）室温下工作的掺铒nc-Si激光器我们在Si基片上制作了掺铒nc-Si光波导，并在光泵浦下在室温下获得了1.54 μ m的受激辐射。这是实现全硅激光器的首次突破。少