Development and Application of Bule Light-Emitting Nanocrystalline Si Materials

蓝光纳米晶硅材料的开发与应用

基本信息

批准号：
08455152
负责人：
AOYAGI Yoshinobu
金额：
$ 4.99万
依托单位：
The Institute of Physical and Chemical Research (RIKEN)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455152/
关键词：
nanocrystalline Si blue light emission quantum size effect Si quantum dot direct transition Er all-Si laser optical communication

项目摘要

In Si nanostructures, quantum size effects are expected to give rise to new optical and electrical properties to replace present materials. The motivation of this study is to develop such new materials and new devices. Nanocrystalline Si (nc-Si) provides a way to fabricate Si into am scale. We have developed a successful process to fabricate nc-Si with controllable crystallite sizes and demonstrated a blue light emission from nc-Si at room temperature. Main results of this project are shown in bellow.(1).Size-dependent blue light emission from nc-SiSize control of Si nanocrystallites formed in a-Si matrix is achieved by using Er as a nucleation center. We have fabricated a series of nc-Si samples with size from 3 nm to 10 am. The smallest crystallite size was 2.7 nm, a Si dot including .-l000 atoms. The nc-Si layers are homogeneous both in the crystallite size and in the optoelectronic properties and show a blue emission band and a sharp peak at 1.54mum which is caused by intra-shell t … More ransitions in Er atoms up to room temperature. We showed that the blue emission shift to higher energies with decreasing size. The value of the shift is in good agreement with the absorption data and could be explained by a novel quantum size effect.(2).First evidence of quantum size effect in ne-SiBy controlling the nanocrystallite size of nc-Si, we demonstrated that both the absorption and reflection spectra of nc-Si shift to higher energy side with decreasing crystallite size. The shift was well explained by the quantum size effect which originates direct transitions in the indirect semiconductor Si. The nc-Si is a promising material with size-tunable optical and electronic properties.(3).A new model of nc-Si/a-Si quantum dot systemWe proposed a new model of order (nc-Si phase)/disorder (a-Si phase) quantum dots system to understand the size effect of electrons in nc-Si materials. A theoretical calculation indicates that direct transitions enhanced by a modification of k-selection rules due to the size reduction result in the blue light emission, Both the absorption and reflection spectra calculated by the proposed model show size effect and are in good agreement with our experimental results.(4).An Er-doped nc-Si laser operated at room temperatureWe have fabricated Er-doped nc-Si waveguides on Si substrates and demonstrated a stimulated emission at 1.54 .tm at room temperature under optical pumping. This is the first breakthrough of realizing an all-Si laser. Less

在SI纳米结构中，预计量子尺寸效应将产生新的光学和电气特性，以更换现有材料。这项研究的动机是开发这种新材料和新设备。纳米晶Si（NC-SI）提供了一种将Si构成AM量表的方法。我们已经开发了一个成功的过程来制造具有控制的结晶尺寸的NC-SI，并在室温下显示了NC-SI的蓝光发射。该项目的主要结果以波纹管的形式显示。（1）。通过使用ER用作成核中心，可以实现对A-SI矩阵中的NC-SiSize对Si Nanocrystallites的尺寸依赖性蓝光发射。我们制造了一系列的NC-SI样品，其大小从3 nm到上午10点。最小的结晶石尺寸为2.7 nm，一个包括。-l000原子在内的Si点。 NC-SI层在结晶石尺寸和光电特性中都是均匀的，并且在1.54MUM处显示出蓝色的发射带和尖峰的尖峰，这是由内壳T造成的…ER原子中的更多ransition在室温到室温。我们表明，蓝色的发射转向较高的能量，尺寸降低。转移的价值与吸收数据非常吻合，可以通过新颖的量子尺寸效应来解释。（2）。在控制NC-SI的纳米晶体大小的NE量子尺寸效应的第一个证据中，我们证明了吸收和NC-SI的反射光谱均转移到NC-SI的较高能量侧向较高的晶体尺寸。量子尺寸效应很好地解释了这一移位，该量构成了间接半导体SI中的直接过渡。 NC-SI是一种具有尺寸可调的光学和电子特性的承诺材料。（3）.NC-SI/A-SI量子点系统的新模型，我们提出了一种新的订单模型（NC-SI相）/疾病（A-SI相）量子点系统，以了解NC-SI材料中电子尺寸效应。理论上的计算表明，由于尺寸降低而导致的K选择规则的修改会导致蓝光发射，从而增强了直接过渡，这是通过所提出的模型计算出的吸收和反射光谱，这表明尺寸效果很好地显示了我们的实验结果。（4）。在光泵下，在室温下在1.54 .tm处刺激发射。这是意识到全si激光器的第一个突破。较少的