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Development of reactively controlled super-sonic nozzle beam epitaxial growth technique

反应控制超音速喷嘴束外延生长技术的发展

基本信息

批准号：
07505013
负责人：
AOYAGI Yoshinobu
金额：
$ 5.12万
依托单位：
The Institute of Physical and Chemical Research (RIKEN)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

项目摘要

We developed the growth technique which is called "supersonic beam epitaxy" (SSBE). Using the technique, we in-situ observed and understood dynamic processes of GaAs growing surface in a milisecond range by means of high-speed RHEED and RD.Precise control of the growth rate to 1/10 monolayr per pulse was also achieved simply by arrangeing the pulse width. Furthermore, we succeeded in the control of surface reaction processes by using supersonic beam source. As a result, by using supersonic beam source, incorporation of carbon inpurities into the crystal during the growth was greatly suppressed and the concentration of carbon in the GaAs crystal is two-order less than that using usual one. All these indicates that the technique is useful and hopeful for the future applications.Wide band-gap GaN and related III-V nitride materials have shown a strong potential for use in optical devices, especially blue and ultraviolet light emitting diodes (LEDs) and laser diodes (LDs). Many efforts have been done to grow such kind of materials by various growth techniques, such as MOCVD,MBE and etc. We successfully combined two techniques namely SSBE and GSMBE together, for the fabrication of GaN quantum dot structures. We used Si as an "anti-surfactant" for the GaN dot fabrication, where methylsilane (CH_3SiH_3) was used as a Si source. Since it was reported that CH_3SiH_3 begins to decompose above 800ﾟC,it is difficult to use it because usually GSMBE growth is carried out at a relatively low temperature. But by using SSBE technique, this difficulty was overcome since high energy of the source beam is thought to enhance the decompositon of the CH_3SiH_3 molecules into Si atoms. As a result, GaN quantum dot structures were successfully fabricated by GSMBE.

我们开发了称为“超音速束外延”（SSBE）的生长技术。利用该技术，我们通过高速RHEED和RD在毫秒范围内原位观察和了解GaAs生长表面的动态过程。通过简单地安排脉冲宽度，还可以将生长速率精确控制到每脉冲1/10单层。此外，我们还利用超声束源成功地控制了表面反应过程。结果，通过使用超声波束源，在生长过程中碳杂质进入晶体中的掺入被大大抑制，并且GaAs晶体中碳的浓度比通常使用的晶体中的碳浓度低两个数量级。所有这些都表明该技术在未来的应用中是有用的和充满希望的。宽带隙GaN和相关的III-V氮化物材料在光学器件，特别是蓝光和紫外发光二极管（LED）和激光二极管（LD）中显示出强大的应用潜力。为了通过各种生长技术来生长此类材料已经做了很多努力，例如MOCVD、MBE等。我们成功地将SSBE和GSMBE两种技术结合在一起，用于制造GaN量子点结构。我们使用 Si 作为 GaN 点制造的“抗表面活性剂”，其中甲基硅烷 (CH_3SiH_3) 用作 Si 源。据报道，CH_3SiH_3在800℃以上开始分解，由于通常GSMBE生长是在相对较低的温度下进行，因此很难使用它。但通过使用SSBE技术，这个困难被克服了，因为源束的高能量被认为可以增强CH_3SiH_3分子分解成Si原子。结果，GSMBE成功制备了GaN量子点结构。