Developement of pattern-defined-epitaxial growth employing laser MOCVD and its application to new optoelectric devices

激光MOCVD模式定义外延生长技术的发展及其在新型光电器件中的应用

• 批准号: 61460071
• 负责人: AOYAGI Yoshinobu
• 金额: $ 4.03万
• 依托单位: The Institute of Physical and Chemical Research
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1986
• 资助国家: 日本
• 起止时间: 1986 至 1987
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-61460071/
• 关键词: MOVPE; Ar^+ laser; 有機金属; アルコンイオンレーザ; レーザーMOCV; ALE; 原子層エピタキシー; パターン化結晶成長

The laser defined epitaxial growth of GaAs using meetalorganic compounds as source gases has been investigated for the purpose of its application on the new optoelectric devices structure. We have obtained results as follows;I) The enhancement of the growth fate of GaAs by the Ar^+ laser irradiation during the epitaxial growth was caused from the surface photochemical reaction of alkylgallium.II) The laser-assisted atomic layer epitaxy (laser-ALE) and the strict structural control of the epitaxial layers have been also studied. It is clarified that the photochemical "site-selective decomposition" process of metalorganic compounds at the As-terminated surface due to the absorption band broadening of adsorbed alkylgallium is the main mechanism for the laser-ALE.III) We have proposed the unified growth model which was based upon the rate equations for the dissociation of alkylgallium at the growing surface. This model well explains with results both of the conventional and the pulsed MOVPE.IV) The applications of the laser-ALE for the device fabrication technology was also discussed. We have successfuly realized the GaAs/ALAs multiquantum well (MQW) structure and the direct patterned growth with the Ar^+ laser scanning.

为了将其应用在新型光电器件结构上，研究了使用金属有机化合物作为源气体的 GaAs 激光限定外延生长。我们得到如下结果：I)外延生长过程中Ar^+激光照射对GaAs生长效果的增强是由烷基镓的表面光化学反应引起的。II)激光辅助原子层外延(laser-ALE)和外延层的严格结构控制也进行了研究。阐明了由于吸附的烷基镓的吸收带展宽而导致的金属有机化合物在As端接表面的光化学“位点选择性分解”过程是激光ALE的主要机制。III）我们提出了基于生长表面烷基镓解离速率方程的统一生长模型。该模型很好地解释了传统MOVPE 和脉冲MOVPE 的结果。IV) 还讨论了激光ALE 在器件制造技术中的应用。我们成功实现了GaAs/ALA多量子阱（MQW）结构和Ar^+激光扫描直接图案化生长。

项目成果

Jun-ichi Kusano;Yusasburo Segawa;Sohachi Iwai;Yoshinobu Aoyagi;Susumu Namba: Journal of Applied Physics. 62. 1376-1380 (1987)

Jun-ichi Kusano;Yusasburo Sekawa;Sohachi Iwai;Yoshinobu Aoyagi;Susumu Namba：应用物理学杂志。

Yoshinobu Aoyagi;Atsutoshi Doi;Souhachi Iwai;Susumu Namba: Journal of Vacuum Science and Technology. B5. 1460-1464 (1987)

Yoshinobu Aoyagi；Atsutoshi Doi；Souhachi Iwai；Susumu Namba：真空科学与技术杂志。

Atsutoshi Doi;Yoshinobu Aoyagi;Susumu Namba: Applied Physics Letters. 49. 785-787 (1986)

Atsutoshi Doi；Yoshinobu Aoyagi；Susumu Namba：应用物理快报。

Atsutoshi Doi;Yoshinobu Aoyagi;Susumu Namba: Materials Research Society Symposia Proceedings. 75. 217 (1987)

Atsutoshi Doi；Yoshinobu Aoyagi；Susumu Namba：材料研究学会研讨会论文集。

Yoshinobu Aoyagi;Atsutoshi Doi;Takashi Meguro;Sohachi Iwai;Susumu Namba: Journal of Electrochemcal Society.

Yoshinobu Aoyagi；Atsutoshi Doi；Takashi Meguro；Sohachi Iwai；Susumu Namba：电化学学会杂志。