Developement of pattern-defined-epitaxial growth employing laser MOCVD and its application to new optoelectric devices

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The laser defined epitaxial growth of GaAs using meetalorganic compounds as source gases has been investigated for the purpose of its application on the new optoelectric devices structure. We have obtained results as follows;I) The enhancement of the growth fate of GaAs by the Ar^+ laser irradiation during the epitaxial growth was caused from the surface photochemical reaction of alkylgallium.II) The laser-assisted atomic layer epitaxy (laser-ALE) and the strict structural control of the epitaxial layers have been also studied. It is clarified that the photochemical "site-selective decomposition" process of metalorganic compounds at the As-terminated surface due to the absorption band broadening of adsorbed alkylgallium is the main mechanism for the laser-ALE.III) We have proposed the unified growth model which was based upon the rate equations for the dissociation of alkylgallium at the growing surface. This model well explains with results both of the conventional and the pulsed MOVPE.IV) The applications of the laser-ALE for the device fabrication technology was also discussed. We have successfuly realized the GaAs/ALAs multiquantum well (MQW) structure and the direct patterned growth with the Ar^+ laser scanning.