Carrier dynamics in GaAs/AlAs ridge quantum wire

GaAs/AlAs 脊量子线中的载流子动力学

基本信息

  • 批准号:
    12650014
  • 负责人:
  • 金额:
    $ 2.56万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    2000
  • 资助国家:
    日本
  • 起止时间:
    2000 至 2001
  • 项目状态:
    已结题

项目摘要

We have investigated the carrier dynamics in the GaAs/AlAs ridge quantum wire by the optical methods. We could solely perform the measurement of the fluorescence spectra and its lifetime.[Experimental]We used the SHG of the femtosecond output pulse from a Ti:Sapphire regenerative Amp. (λ=400nm, 100μJ, 150fs) as the excitation. The samples studied here were the quantum wells, A1458 (AlAs 10nm-GaAs 7nm-AlAs 3nm), A1472 (AlAs 5nm-Al_<0.5>Ga_<0.5>As 170nm-GaAs 6nm-Al_<0.5>Ga_<0.5>As 170nm-AlAs 5nm), A1480 (AlAs 3nm-Al_<0.3>Ga_<0.7>As 283nm-GaAs 6nm-AlAs 3nm) and the ridge quantum wire with the same layer structure. The lifetime measurement of the fluorescence from the sample (10K) was carried out by using a streak camera.[Experimental Results](1) Lifetime measurement in GaAs/AlAs quantum wellsIn the case of strong excitation, we observed the broad fluorescence spectrum. It probably results from that the lowest excited states in quantum well are saturated due to the high density of the excited carriers. In this case, the lifetime was shorter at the shorter wavelength. In the case of weak excitation, we observed the narrow spectrum from the extitons in the quantum well. The measured lifetimes were 1290ps(A1458), 427ps(A1472), 280ps(A1480), respectively. In the sample A1480, the fluorescence at 666 nm of the barrier (Al_<0.3>Ga_<0.7>As) was also observed.(2) Lifetime measurement in GaAs/AlAs ridge quantum wireWe measured the lifetime of fluorescence in A1480 ridge sample. Two peaks were observed at 678 and 725 nm in the fluorescence spectrum. The lifetime of fluorescence was measured to be very short for the wavelength of 660 nm, but to become relatively long at 680 nm. At 700 nm, the fluorescence showed the two-exponential decay and it became the single-exponential deay at 720 nm. At 740 nm, the lifetime was observed to be long again. Based on these measurement, we attribute the fluorescence peaks at 678 nm and 725 nm to side-QW and QWR, respectively.
我们用光学方法研究了GaAs/AlAs脊型量子线中的载流子动力学。我们可以单独进行荧光光谱及其寿命的测量。[实验]我们使用了钛宝石再生放大器输出的飞秒脉冲的倍频。(λ=400 nm,100μJ,150fs)作为激发光。A1458(AlAs 10 nm-GaAs7 nm-AlAs 3 nm)、A1472(AlAs 5 nm-Al_&lt;0.5&gt;Ga_&lt;0.5&gt;As 170 nm-GaAs6 nm-Al_&lt;0.5&gt;As 170 nm-AlAs 5 nm)、A1480(AlAs 3 nm-Al_&lt;0.3&gt;Ga_&lt;0.7&gt;As 283 nm-GaAs6 nm-AlAs 3 nm)和脊型量子线。用扫描相机测量了样品(10K)的荧光寿命.[实验结果](1)在强激发下,我们观察到了较宽的荧光光谱.这可能是由于高密度的激发载流子导致量子阱中最低激发态饱和的结果。在这种情况下,波长越短,寿命越短。在弱激发的情况下,我们观察到量子阱中激子的窄谱。测得的寿命分别为1290ps(A1458)、427ps(A1472)、280ps(A1480)。在样品A1480中,还观察到了666 nm处的势垒(Al_&lt;0.3&Gt;Ga_&lt;0.7&Gt;As)的荧光。(2)GaAs/AlAs脊型量子线的寿命测量。荧光光谱在678和725 nm处观察到两个峰。在660 nm处,荧光寿命很短,在680 nm处,荧光寿命变得相对较长。在700 nm处,荧光呈双指数衰减,在720 nm处为单指数衰减。在740 nm处,观察到其寿命再次变长。基于这些测量,我们分别将678 nm和725 nm的荧光峰归因于Side-QW和QWR。

项目成果

期刊论文数量(3)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Aguma, Asaka, Nakanishi, Itoh, et al.: "Optical detection system using time structure of UVSDR for combined laser-SR experiments"Nuclear Instruments & Methods in Physics Research. 467-468. 1455-1457 (2001)
Aguma、Asaka、Nakanishi、Itoh 等人:“使用 UVSDR 时间结构进行激光-SR 组合实验的光学检测系统”Nuclear Instruments
  • DOI:
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    0
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  • 通讯作者:
J. Azume, S. Asaka, T. Tsujibayashi, M. Itoh, M. Watanabe, O. Arimoto, S. Nakanishi, H. Itoh and M. Kamada: "Optical detection system using time structure of UVSOR for combined laser-SR experiments"Nuclear Instruments & Methods in Physics Research A. 467-
J. Azume、S. Asaka、T. Tsujibayashi、M. Itoh、M. Watanabe、O. Arimoto、S. Nakanishi、H. Itoh 和 M. Kamada:“使用 UVSOR 时间结构进行组合激光-SR 的光学检测系统
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  • 发表时间:
  • 期刊:
  • 影响因子:
    0
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  • 通讯作者:
Azuma, Asaka, Nakanishi, Itoh, et al.: "Optical detection system using time structure of UVSOR for combined lases-SR experiments"Nuclear Instruments & Methods in Physics Research. 467-468. 1455-1457 (2001)
Azuma、Asaka、Nakanishi、Itoh 等人:“使用 UVSOR 时间结构进行组合激光-SR 实验的光学检测系统”Nuclear Instruments
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    0
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NAKANISHI Shunsuke其他文献

Exiton Dynamics in GaNAs/GaAs Multiple Quantum Well
GaN/GaAs 多量子阱中的激子动力学
  • DOI:
  • 发表时间:
    2008
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Akinobu Kittaka;Kenshuke Fujii;Hideki Hari;Kazuki Kawashima;NAKANISHI Shunsuke;KOSHIBA Shyun;TSURUMACHI Noriaki;Hidefumi Akiyama;ITOH Hlroshi
  • 通讯作者:
    ITOH Hlroshi

NAKANISHI Shunsuke的其他文献

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{{ truncateString('NAKANISHI Shunsuke', 18)}}的其他基金

Control of photoluminescence properties in semiconductor quantum dots by using the interaction with polymers
利用与聚合物的相互作用控制半导体量子点的光致发光特性
  • 批准号:
    20540316
  • 财政年份:
    2008
  • 资助金额:
    $ 2.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Study on phonon generation and phonon coherence in dielectric.
电介质中声子产生和声子相干性的研究。
  • 批准号:
    09640400
  • 财政年份:
    1997
  • 资助金额:
    $ 2.56万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

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    71472506
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    2008
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Exploring of Bulk and Structure Inversion Asymmetry in GaAs/AlGaAs Quantum Well Structures Applying Spin Photogalvanics
应用自旋光电池探索 GaAs/AlGaAs 量子阱结构中的体积和结构反转不对称性
  • 批准号:
    40956062
  • 财政年份:
    2007
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    $ 2.56万
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    Priority Programmes
Fabrication characterization and device application of InP InGaAsP AlGaAs GaAs and Si SiGe quantum well structures
InP InGaAsP AlGaAs GaAs 和 Si SiGe 量子阱结构的制备表征和器件应用
  • 批准号:
    42570-1994
  • 财政年份:
    1996
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InP InGaAsP AlGaAs GaAs 和 Si SiGe 量子阱结构的制备表征和器件应用
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InP InGaAsP AlGaAs GaAs 和 Si SiGe 量子阱结构的制备表征和器件应用
  • 批准号:
    42570-1994
  • 财政年份:
    1994
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U.S.-France Cooperative Research: Optical Absorption in P-Type ALGaAs/GaAs Multi-Quantum-Well Infrared Detectors
美法合作研究:P型ALGaAs/GaAs多量子阱红外探测器中的光学吸收
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    9315393
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Fort Monmouth:新型 N 型调制掺杂 GaAs/A1As 和 A1As/A1GaAs 量子阱结构的光学研究
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    9311835
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    1993
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    $ 2.56万
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GaAs/AlxGa1-xAs 量子阱结构中的电子局域声子相互作用
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