Passivation of dislocations in GaAs-on-Si

GaAs-on-Si 中位错的钝化

• 批准号: 12650013
• 负责人: SOGA Tetsuo
• 金额: $ 1.66万
• 依托单位: Nagoya Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650013/
• 关键词: Gallium Arsenide; Silicon Substrate; Defects; Dislocation; Passivation; Solar Cell; Minority Carrier Lifetime; Photoluminescence; 水素プラズマ; フォスフィン

Effects of PH_3/H_2 plasma passivation of GaAs grown on Si substrate have been investigated in detail. It is observed that both the surface phosphidation and hydrogenation can be realized simultaneously with a reduced plasma-induced damage by using PH_3/H_2 plasma exposure. The optical and electrical properties of GaAs on Si are effectively improved by PH_3/H_2 plasma exposure due to the passivation of bulk and surface defects-related nonradiative recombination centers by incorporation of hydrogen and phosphorous atoms. The experimental results show that the AlGaAs/GaAs recombination rate is reduced and the minority carrier lifetime is improved by the PH_3/H_2 plasma exposure. The PH_3/H_2 plasma exposed GaAs Schottky diodes on Si show an increase in the reverse breakdown voltage by a factor of about 1.6, and the as-passivated GaAs solar cell grown on Si shows an increase in the conversion efficiency from 15.9% to 18.6 % compared to that of the as-grown samples. The passivated GaAs dev … More ices on Si show outstanding thermal stability, which is probably due to the active participation of both H and P atoms in the PH_3/H_2 plasma passivation process. It is found that the high density of dislocations in GaAs/Si heteroepitaxial layers largely enhance the diffusion of phosphorous atoms during the PH_3/H_2 plasma exposure. Electron beam-induced current proved that the defect-related dark spot density was effectively reduced by adding P into the pure H_2 plasma In addition, PH_3/H_2 plasma exposure greatly increased the minority carrier properties and decreased the saturation current of GaAs pn junction structure grown on Si substrate. The incorporated P atoms strongly passivated the electrical states of residual dislocations in GaAs/Si solar cell. Significant spontaneous emission enhancement is observed at the cavity mode for the hydrogen plasma passivated AlGaAs/GaAs multi-quantum well samples., which results from the passivation of electrical activity of defect-related non-radiative deep centers and increased minority carrier lifetime. The defect passivation of InGaP grown on Si substrates was achived without dissociation of phosphorous from the surface by PH_3/H_2 plasma exposure. A significant enhancement of the photoluminescence intensity was observed, which is due to the hydrogenation defect-related nonradiative recombination centers. Less

本文详细研究了PH_3/H_2等离子体对Si衬底上生长的GaAs的钝化作用。结果表明，采用PH_3/H_2等离子体辐照，可以同时实现表面磷化和氢化，并降低等离子体损伤。PH_3/H_2等离子体辐照能有效地改善GaAs/Si的光电性能，这是由于氢和磷原子的掺入钝化了与体缺陷和表面缺陷相关的非辐射复合中心。实验结果表明，PH_3/H_2等离子体辐照降低了AlGaAs/GaAs复合率，提高了少子寿命。在Si上生长的PH_3/H_2等离子体暴露的GaAs肖特基二极管的反向击穿电压提高了约1.6倍，钝化的GaAs太阳电池的转换效率从15.9%提高到18.6%。钝化GaAs器件 ...更多信息 Si上的冰具有优异的热稳定性，这可能是由于H和P原子在PH_3/H_2等离子体钝化过程中的积极参与。发现GaAs/Si异质外延层中的高位错密度大大增强了PH_3/H_2等离子体暴露过程中磷原子的扩散。电子束感生电流实验表明，在纯H_2等离子体中加入P元素，可以有效地降低缺陷引起的暗斑密度。此外，PH_3/H_2等离子体暴露还大大提高了Si衬底上生长的GaAs pn结结构的少子特性，降低了饱和电流。掺入的P原子强烈钝化了GaAs/Si太阳电池中残余位错的电态。氢等离子体钝化的AlGaAs/GaAs多量子阱样品在腔模处观察到显著的自发辐射增强。这是由缺陷相关的非辐射深中心的电活性的钝化和增加的少数载流子寿命引起的。用PH_3/H_2等离子体对生长在Si衬底上的InGaP进行了钝化处理，使磷不从表面解离。一个显着增强的光致发光强度观察到，这是由于氢化缺陷相关的非辐射复合中心。少

项目成果

G. Wang, T. Soga, T. Egawa, T. Jimbo and M. Umeno: "Enhanced spontaneous emission in hydrogen-plasma-passivated AlGaAs/GaAs vertical-cavity surface-emitting laser structures grown on Si substrate"Electron. Lett.. 36. 1462 (2000)

G. Wang、T. Soga、T. Ekawa、T. Jimbo 和 M. Umeno：“在硅衬底上生长的氢等离子体钝化 AlGaAs/GaAs 垂直腔表面发射激光器结构中的增强自发发射”电子。

G. Wang, T. Ogawa, K. Murase, K. Hori, T. Soga, B. Zhang, G. Zhao, H. Ishikawa, T. Egawa, T. Jimbo and M. Umeno: "Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by radio Frequency Phosphine/Hydrogen Plasma Exposure"Jpn. J. Appl. Phy

G. Wang、T. Okawa、K. Murase、K. Hori、T. Soga、B. Zhu、G. Zhao、H. Ishikawa、T. Egawa、T. Jimbo 和 M. Umeno：“体和表面的钝化

G.Wang: "Surface and bulk passivation of GaAs solar cell on Si substrate by H_2+PH_3 plasma"Appl. Phys. Lett.. 76・6. 730-732 (2000)

G.Wang：“H_2+PH_3等离子体对GaAs太阳能电池的表面和整体钝化”Lett.76・6（2000）。

G.Wang: "Adetailed study of H_2 plasmapassivation effects on GaAs/Si solar cell"Solar Energy Materials & Solar Cells. 66. 599-605 (2001)

G.Wang：“H_2等离子体钝化对GaAs/Si太阳能电池影响的详细研究”太阳能材料

G. Wang, T. Ogawa, T. Soga, T. Jimbo and M. Umeno: "Passivation of dislocations in GaAs grown on Si substrates by phosphine (PH_3) plasma exposure"Appl. Phys. Lett.. 78. 3463 (2001)

G. Wang、T. Okawa、T. Soga、T. Jimbo 和 M. Umeno：“通过磷化氢 (PH_3) 等离子体暴露在 Si 衬底上生长的 GaAs 中位错的钝化”Appl。