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Study of relationship between oxygen deficiencies and electric characteristics of metal oxides, and improvement of thin film quality

研究金属氧化物缺氧与电特性的关系，提高薄膜质量

基本信息

批准号：
16360016
负责人：
YAMABE Kikuo
金额：
$ 4.86万
依托单位：
University of Tsukuba
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2005
项目状态：
已结题

项目摘要

In this study, we measured and evaluated dielectric characteristics of HfO_2-based gate oxide films as a tyical metal oxide film, of which application to ULSI is developed.To suppress instability of electric characteristics at Si surface, thin interlayer silicon dioxide is inserted between the high-k film and Si substrate. It is pointed out that the interlayer film is attacked during adhesion of metal atoms and their dielectric characteristics are degraded. This result means that in manufacturing process of the metal oxide films, the dielectric characteristics of the interlayer thin films can be degraded.It is cleared that conduction of such thin high-k metal oxide films is limited not by interface but by their bulk quality. Carrier separation method of gate leakage currents gives us understanding that both electrons and holes contribute to conduction. Both electron and hole currents are attributed to conduction of intermediate defect levels such as oxygen deficiencies and oxygen inter … More stitials. To stabilize the leakage currents, it is important that these defects are excluded or controlled. Time dependence of both electron and hole currents is explained by non-uniform distribution of both trapped electrons and trapped holes. That is, the electrons are trapped near the gate electrode in the high-k gate dielectric films and the holes are trapped near the substrate.Study using mono-energetic positron beams gives us the evidence of oxygen deficiencies in high-k gate films. This study shows relationship between oxygen deficiencies and electric characteristics of high-k metal oxide thin film. Addition of nitrogen to high-k metal oxide films suppresses the gate leakage currents and their deviation. First principle calculation supports the effect of nitrogen addition.To realize high-performance function of integrated circuits by various kinds of thin metal oxides, it is shown that establishment of both more precise manufacturing processes of metal oxides and their evaluation technologies is necessary and collaboration of experimental and calculation physics is very important. Less

在这项研究中，我们测量和评估了HfO2基栅氧化膜作为一种典型的金属氧化物薄膜在ULSI中的应用。为了抑制硅表面的电学特性的不稳定性，在高k膜和硅衬底之间插入了薄的中间层二氧化硅。指出金属原子粘结过程中夹层膜受到冲击，使其介电性能下降。这一结果表明，在金属氧化物薄膜的制备过程中，层间薄膜的介电性能会下降。这清楚地表明，这种薄的高k金属氧化物薄膜的导电性不是受界面的限制，而是受其体积质量的限制。栅漏电流的载流子分离方法使我们了解到电子和空穴对导电都有贡献。电子和空穴电流都归因于中间缺陷能级的传导，如氧缺陷和氧…间更多的统计数据。为了稳定漏电流，重要的是排除或控制这些缺陷。电子和空穴电流随时间的变化可以用俘获电子和空穴的不均匀分布来解释。也就是说，在高k栅介质膜中，电子被捕获在栅电极附近，空穴被捕获在衬底附近。利用单能正电子束的研究给出了高k栅电介质膜中氧缺乏的证据。本研究揭示了高介电常数金属氧化物薄膜的电学特性与氧缺乏之间的关系。在高k金属氧化物薄膜中添加氮气可以抑制栅漏电流及其偏差。第一性原理计算支持氮的添加效应。为了实现各种薄金属氧化物集成电路的高性能功能，建立更精确的金属氧化物制造工艺及其评估技术是必要的，实验和计算物理的协作是非常重要的。较少

项目成果

期刊论文数量（37）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Electrochem.Soc., Tran.Vol.1, No.1"Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface-5"

Electrochem.Soc., Tran.Vol.1, No.1“SiO_2 和 Si-SiO_2 Interface-5 的物理和化学”

DOI：
发表时间：
2005
期刊：
影响因子：
0
作者：
R.Hasunuma;J.Okamoto;N.Tokuda;K.Yamabe
通讯作者：
K.Yamabe

Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics

具有堆叠栅极电介质的金属氧化物半导体结构中的瞬态电容

DOI：
发表时间：
2004
期刊：
Japanese Journal of Applied Physics 43(11B)
影响因子：
0
作者：
M.Goto;K.Higuchi;K.Torii;R.Hasunuma;K.Yamabe;
通讯作者：
K.Yamabe;

Characterization of Hf_<0.3>Al_<0.7>O_x Fabricated by Atomic-Layer Deposition Technique Using Monoenergetic Positron Beams

单能正电子束原子层沉积技术制备 Hf_<0.3>Al_<0.7>O_x 的表征

DOI：
发表时间：
2004
期刊：
Japanese Journal of Applied Physics 43
影响因子：
0
作者：
A.Uedono;M.Goto;K.Higuchi;K.Shiraishi;K.Yamabe;H.Kitajima;et al.
通讯作者：
et al.

Selective growth of ag nanowires on Si(111) surfaces by electroless deposition.

DOI：
10.1021/jp052284l
发表时间：
2005-06
期刊：
The journal of physical chemistry. B
影响因子：
0
作者：
N. Tokuda;N. Sasaki;H. Watanabe;K. Miki;S. Yamasaki;R. Hasunuma;K. Yamabe
通讯作者：
N. Tokuda;N. Sasaki;H. Watanabe;K. Miki;S. Yamasaki;R. Hasunuma;K. Yamabe

The Role of Oxygen-related Defects on the Reliabilities of HfO_2-based High-k Gate Insulators

氧相关缺陷对HfO_2基高k栅绝缘体可靠性的影响

DOI：
发表时间：
2005
期刊：
Trans.Mater.Res.Soc. 30(1)
影响因子：
0
作者：
K.Torii;K.Shiraishi;S.Miyazaki;K.Yamabe;M.Boero;T.Chikyow;K.Yamada;H.Kitajima;T.Arikado
通讯作者：
T.Arikado