Development of High-speed Resonant Tunneling Diodes for Room Temperature Application

室温应用高速谐振隧道二极管的开发

• 批准号: 62850067
• 负责人: SAKAKI Hiroyuki
• 金额: $ 6.91万
• 依托单位: University of Tokyo (Research Center for Advanced Sceince and Technology)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research
• 财政年份: 1987
• 资助国家: 日本
• 起止时间: 1987 至 1988
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-62850067/
• 关键词: Resonant tunneling diodes; double barrier structures; GaAs; (AlGa) As; Optical bistability device; 量子井戸

1. Speed limit of Resonant Tunneling Diodes and its control by Structural Parameter Design The ultimate speed of resonant tunneling diodes is governed by the time delay associated with multiple reflection process between the tow barriers. This delay was directly measured by picosecond laser spectroscopy and found to be reduced expoentially from 600 ps to 60 ps as the thickness of AlAS barriers is reduced from 40 A to 28 A. The observed tendency is shown to agree very well with the theoretical prediction that the delay is given by the uncertainty releatio h/ E where E is the width of the resonant peak in the tunneling transmission spectrum TT^x(E) of electrons. Hence, it is found necessary to abopt extremely thin barriers for high speed operation. In addition, the variation of diode characteristics on Al content of/Al Ga As barriers is systemtically elucidated, indicating that the use of pure AlAs barriers is most efficient in achieving high peak-to-valley ratio ratio at room temperatures.2. A Novel Scheme for High Speed Optical Switching of Resonant Tunneling Diodes An integration of a resonant tunneling diode with a quantum Strak modulators by connecting them serially is found to provide a novel optical bistable device, when a fixed bias voltage is applied across the hybrid device. The device is opaque when the incident light is weak( 1mW), but becomes transparent, as the light intensity exceed a certain value. The movel device is analysed to show that very high speed ( 100ps) switching is possible with low power ( 30fJ) with excellent on-off latio (<similar or equal>10:1). A successful operation is demonstrssion

1.共振隧穿二极管的速度极限及其结构参数控制共振隧穿二极管的极限速度取决于两个势垒之间多次反射过程的时间延迟。该延迟通过皮秒激光光谱直接测量，并且发现随着AlAS阻挡层的厚度从40 A减小到28 A，延迟从600 ps减小到60 ps。所观察到的趋势与理论预测非常一致，即延迟由不确定性关系h/ E给出，其中E是电子隧穿透射谱TT^x（E）中共振峰的宽度。因此，发现有必要采用极薄的屏障用于高速操作。此外，还系统地研究了/Al-Ga-As势垒层中Al含量对二极管特性的影响，表明在室温下使用纯Al-As势垒层可以获得较高的峰谷比.一种新的谐振隧穿二极管高速光开关方案通过将谐振隧穿二极管与量子Strak调制器串联集成，当在混合器件两端施加固定的偏置电压时，发现可以提供一种新的光开关器件。当入射光较弱（1 mW）时，器件是不透明的，但当光强超过一定值时，器件变得透明。对该器件的分析表明，在低功率（30 fJ）下，可以实现极高速（100 ps）开关，并具有良好的开关比（<similar or equal>10：1）。一次成功的手术

项目成果

H. SAKAKI; H. KURATA; M. YAMANISHI: "Novel quantum well optical bistability device with excellent on-off ratio and high-speed capability" Electronics Letters. 24. 1-2 (1988)

H.坂木；

H.Kurata;M.Tsuchiya;H.Sakaki: Int.Conf on Modulated Semiconductors Structures 詳細はApplied Physics Letters. (1889)

H.Kurata；M.Tsuchiya；H.Sakaki：应用物理快报中关于调制半导体结构的详细信息 (1889)。

M. TSUCHIYA; T. MATSUSU; SAKAI: "Tunneling escape rate of electrons from quantum well in double barrier heterostructures" Phys. Rev. Letters. 59. 2356-2359 (1987)

土屋先生；

H. MATSUSUE; M. TSUCHIYA; H. SAKAKI: "Tunnelling dynamics and resonant coupling of electrons in GaAs/AlAs coupled double-quantum well structure under electric fields" Proc. of LSA (Optical of Society of America) Topical Meeting on Quantum Wells for Optics

H.松江；

T.Matsusue;M.Tsuchiya;H.Sakaki: Proc.of OSA (optical of society of America) Topical Meeting on Quantum Wells for Optics and Opto-eldctronic. WD-1. (1989)

T.Matsusue;M.Tsuchiya;H.Sakaki：Proc.of OSA（美国光学学会）光学和光电量子井专题会议。