Silicon-Carbide Switches for Post-Silicon Efficiency of Power Electronics

用于电力电子后硅效率的碳化硅开关

• 批准号: LP150100525
• 负责人: Prof Sima Dimitrijev
• 金额: $ 36万
• 依托单位: Griffith University
• 依托单位国家: 澳大利亚
• 项目类别: Linkage Projects
• 财政年份: 2016
• 资助国家: 澳大利亚
• 起止时间: 2016-04-26 至 2021-04-25
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/LP150100525
• 关键词: Silicon; Carbide; Switches; Post; Efficiency

The aim of this project is to create a prototype of a silicon carbide (SiC)-based power-electronic switch for improved energy efficiency and reduced size of power-electronic circuits, well beyond the theoretical limits of silicon technology. Until very recently, the dominant controlled switch in electronics could only be implemented as a silicon transistor. A new method of electronic passivation of SiC surfaces has enabled the recent commercialisation of SiC transistors. It is expected that the material advantages of SiC can be fully exploited by a new device structure and a new fabrication process.

该项目的目标是创建基于碳化硅（SiC）的电力电子开关原型，以提高能源效率并缩小电力电子电路的尺寸，远远超出硅技术的理论极限。直到最近，电子器件中占主导地位的控制开关只能用硅晶体管来实现。碳化硅表面电子钝化的新方法使得碳化硅晶体管最近实现了商业化。预计新的器件结构和新的制造工艺可以充分发挥SiC的材料优势。