Silicon-Carbide Switches for Post-Silicon Efficiency of Power Electronics

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The aim of this project is to create a prototype of a silicon carbide (SiC)-based power-electronic switch for improved energy efficiency and reduced size of power-electronic circuits, well beyond the theoretical limits of silicon technology. Until very recently, the dominant controlled switch in electronics could only be implemented as a silicon transistor. A new method of electronic passivation of SiC surfaces has enabled the recent commercialisation of SiC transistors. It is expected that the material advantages of SiC can be fully exploited by a new device structure and a new fabrication process.