Feasibility of an InP Reflective Semiconductor Optical Amplifier on a Silicon Nitride hybrid integration platform.

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The goal of this Engage project is to establish the feasibility of InGaAsP/InP Quantum Well (QW) Reflective Semiconductor Optical Amplifier (RSOA) configured for a flip chip assembly using a Silicon Nitride (Si3N4) hybrid integration platform and to assess the performance of the RSOA as a gain block for an External Cavity Tuneable Laser (ECTL) over the C-band for the WDM telecommunications market. The study will consider adiabatic couplers exploiting sub-wavelength structures and vertically as well as horizontally thinned tapers for efficient evanescent optical energy transfer between the RSOA and Si3N4 waveguide. An asymmetric multiple quantum well (AMQW) RSOA will be modelled and simulated with the design goal of high gain and high saturation power over a wide-band. All elements will then be assembled in a simulation to determine the