Feasibility of an InP Reflective Semiconductor Optical Amplifier on a Silicon Nitride hybrid integration platform.

该Engage项目的目标是确定InGaAsP/InP量子阱（QW）反射半导体光放大器（RSOA）的可行性，该放大器配置用于使用氮化硅（Si3N4）混合集成平台的倒装芯片组装，并评估RSOA作为WDM电信市场c波段外腔可调谐激光器（ECTL）增益块的性能。该研究将考虑利用亚波长结构的绝热耦合器，以及在RSOA和Si3N4波导之间高效的倏逝光能传输的垂直和水平变细锥体。以宽频带高增益和高饱和功率为设计目标，对非对称多量子阱（AMQW） RSOA进行了建模和仿真。然后，所有元素将在模拟中组装以确定

The goal of this Engage project is to establish the feasibility of InGaAsP/InP Quantum Well (QW) Reflective Semiconductor Optical Amplifier (RSOA) configured for a flip chip assembly using a Silicon Nitride (Si3N4) hybrid integration platform and to assess the performance of the RSOA as a gain block for an External Cavity Tuneable Laser (ECTL) over the C-band for the WDM telecommunications market. The study will consider adiabatic couplers exploiting sub-wavelength structures and vertically as well as horizontally thinned tapers for efficient evanescent optical energy transfer between the RSOA and Si3N4 waveguide. An asymmetric multiple quantum well (AMQW) RSOA will be modelled and simulated with the design goal of high gain and high saturation power over a wide-band. All elements will then be assembled in a simulation to determine the