Feasibility of an InP Reflective Semiconductor Optical Amplifier on a Silicon Nitride hybrid integration platform.

氮化硅混合集成平台上 InP 反射半导体光放大器的可行性。

• 批准号: 477622-2014
• 负责人: Dolgaleva, Ksenia
• 金额: $ 1.82万
• 依托单位: University of Ottawa
• 依托单位国家: 加拿大
• 项目类别: Engage Grants Program
• 财政年份: 2014
• 资助国家: 加拿大
• 起止时间: 2014-01-01 至 2015-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=565862
• 关键词: Feasibility; InP; Reflective; Semiconductor; Optical

The goal of this Engage project is to establish the feasibility of InGaAsP/InP Quantum Well (QW) Reflective Semiconductor Optical Amplifier (RSOA) configured for a flip chip assembly using a Silicon Nitride (Si3N4) hybrid integration platform and to assess the performance of the RSOA as a gain block for an External Cavity Tuneable Laser (ECTL) over the C-band for the WDM telecommunications market. The study will consider adiabatic couplers exploiting sub-wavelength structures and vertically as well as horizontally thinned tapers for efficient evanescent optical energy transfer between the RSOA and Si3N4 waveguide. An asymmetric multiple quantum well (AMQW) RSOA will be modelled and simulated with the design goal of high gain and high saturation power over a wide-band. All elements will then be assembled in a simulation to determine the

该Engage项目的目标是确定InGaAsP/InP量子阱（QW）反射半导体光放大器（RSOA）的可行性，该放大器配置为使用氮化硅（Si 3 N4）混合集成平台的倒装芯片组件，并评估RSOA作为WDM电信市场C波段外腔可调谐激光器（ECTL）增益模块的性能。这项研究将考虑绝热耦合器，利用亚波长结构和垂直以及水平减薄的锥体之间的RSOA和氮化硅波导的有效的倏逝光能量转移。本论文将以宽频带高增益及高饱和功率为设计目标，对非对称多量子阱RSOA进行建模与模拟。然后，所有元素将在模拟中组装，以确定