Elucidation of effects of point defects on electrical properties of 4H-SiC and development of nrocesses for carrier lifetime control

在这项工作中，我们在4 H-SiC样品中引入缺陷，然后观察样品中的深能级和载流子寿命。结果表明，2 MeV电子辐照在n型样品中引入了深能级，深能级来源于碳反位空位缺陷。表面复合对载流子寿命没有显著影响。另一方面，用160 keV电子辐照的p型样品显示出来自碳相关的复合缺陷的深能级，并且深能级可能充当复合中心。

In this work, we introduced defects in 4H-SiC samples, and then observed deep levels and carrier lifetimes in the samples. The results show that deep levels were introduced in n-type samples by 2 MeV electron irradiation, and the deep levels would originate from carbon-antisite-vacancy related defects. Surface recombination does not significantly effect on the carrier lifetime. On the other hand, p-type samples irradiated with 160 keV electrons show deep levels from carbon-related complex defects and the deep levels possibly act as a recombination center.