Establishment of an reliability evaluation scheme based on statistical analysis and electronic defect sensing for the reliability of silicon against fatigue failure

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A new scheme for statistical evaluation and estimation of fatigue lifetime of silicon was established. By applying the method developed in this study, a possible fatigue mechanism other than the already well-known hypothesis with surface oxidation as a key feature was newly suggested. It was also newly discovered by using electronic sensing method for mechanical damages on silicon surface that the electronic state of mechanical damage on silicon surface was sensitive to the gas species in environment, which suggests a possible mechanism inside the bulk material to reduce lifetime due to the existence of water or hydrogen.