In-situ TEM observation of silicon fatigue process using resonance compressive fatigue test

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The purpose of this study is to observe directly silicon fatigue process from initial defect to fatigue fracture by in-situ TEM fatigue test for surveying the fatigue mechanism. Compressive-tensile test device with comb drive actuator was fabricated using SOI-MEMS technologies. TEG (test element group) device was electrically actuated by applying voltage under vacuum environment. For fatigue test with controlled stress ratio, TEM holder was developed by assembling a load cell, piezo actuator, and electrostatic probe. Under cyclic compressive load, accumulation of recombination defect was observed using electron beam induced current imaging. It was found that this defect was deeply related with decrease in fracture strength of silicon.