on-Beam-Assisted Deposition of Hard cBN Films and Internal Stress Relaxation by Laminated layer

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Boron nitride (BN) films were prepared by depositing B vapor under simultaneous irradiation of N ions, that is ion mixing and vapor deposition technique. The effects of processing parameters on the internal stress of films were investigated. As a result, compressive internal stress increases at low acceleration voltage and high transport ratio B/N, of which the conditions correspond to those for formation of cubic BN phase. The hardness also becomes high at these conditions and there is a high negative correlation between internal stress and hardness of BN films. Especially, relaxation of internal stress without degradation of high hardness can be achieved when the crystal structure of inner layer is hexagonal BN.