Monolithic integration of multi-wavelength light emitter By vapor-diffusion-dominated selective-area growth

通过蒸汽扩散主导的选择性区域生长单片集成多波长光发射器

• 批准号: 20686022
• 负责人: SUGIYAMA Masakazu
• 金额: $ 16.31万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (A)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20686022/
• 关键词: InGaN; MOVPE; 選択成長; 多重量子井戸; 発光ダイオード; 波長シフト; 有機金属気相成長; GaN; 発光波長制御; 多色集積

Selective-area growth (SAG) of InGaN/GaN multiple quantum wells (MQWs), taking advantage of the vapor-phase diffusion of layer precursors with the use of wide (more than 100μm in width) masks, has been investigated in order to achieve in-plane modulation of light-emission wavelength. The mechanism behind such wavelength modulation has been explored through the analysis of the SAG of GaN, InN and InGaN bulk layers. Aiming at a wider range of wavelength modulation, a GaN hexagonal pyramid, with tailored mask width surrounding it, has been adopted and InGaN/GaN MQWs have been grown on the semi-polar surfaces on the pyramids. A multi-wavelength light emitter has been fabricated on the basis of this approach.

利用气相扩散技术，采用宽掩模（大于100μm）生长InGaN/GaN多量子威尔斯（MQW），实现了发光波长的面内调制。通过对GaN、InN和InGaN体层的SAG的分析，探索了这种波长调制背后的机制。针对更宽的波长调制范围，采用了GaN六角金字塔，并在金字塔的半极性表面上生长了InGaN/GaN多量子阱。在此基础上研制了一种多波长光发射器。

项目成果

Role of vapor-phase diffusion in selective-area MOVPE of InGaN/GaN MQWs

InGaN/GaN MQW 选择性区域 MOVPE 中气相扩散的作用

• 发表时间: 2009
• 期刊: J.Crystal Growth 311
• 作者: Yuki Tomita;Tomonari Shioda;Masakazu Sugiyama;Yukihiro Shimogaki;Yoshiaki Nakano
• 通讯作者: Yoshiaki Nakano

Selective Area Metal–Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission

• DOI: 10.1109/jstqe.2009.2015433
• 发表时间: 2009-07
• 期刊: IEEE Journal of Selected Topics in Quantum Electronics
• 影响因子: 4.9
• 作者: T. Shioda;Y. Tomita;M. Sugiyama;Y. Shimogaki;Y. Nakano

Monolithically integrated InGaN-based multicolor light-emitting diodes fabricated by wide-sripe selective area metal-organic vapor phase epitaxy

宽幅选区金属有机气相外延单片集成InGaN基多色发光二极管

• 发表时间: 2010
• 期刊: Applied Physics Express
• 影响因子: 2.3
• 作者: Tomonari Shioda;Masakazu Sugiyama;Yukihiro Shimogaki;Yoshiaki Nakano
• 通讯作者: Yoshiaki Nakano

マルチスケール製膜速度分布を用いたGaN MOVPE反応機構の解析

利用多尺度沉积速率分布分析GaN MOVPE反应机理

• 发表时间: 2009
• 作者: 杉山正和;安河内諭;塩田倫也;霜垣幸浩;中野義昭
• 通讯作者: 中野義昭

Monolithically integrated muti-color light emitting diode fabrication by wide-stripe selective area metal-organic vapor phase epitaxy

通过宽条纹选区金属有机气相外延制造单片集成多色发光二极管

• 发表时间: 2009
• 作者: Tomonari Shioda;Masakazu Sugiyama;Yukihiro Shimogaki;Yoshiaki Nakano:
• 通讯作者: Yoshiaki Nakano: