Growth of high-quality thick InGaN by raised-pressure MOVPE

MOVPE反应器有两个缓冲罐，用于供应加压的TMGa和TMIn，已从1atm运行到10atm。研究发现，随着反应器压力的增加，气体的导热系数增大，金属有机前驱体在到达基体之前就被完全分解。因此，对反应器进行了重新设计和维修。然后，我们可以成功地在高压下生长出高In含量的InGaN。与在1atm下生长的量子阱相比，在6atm下生长的InGaN基量子阱的发射波长长于120nm。

MOVPE reactor having two buffer tanks for the supply of pressurized TMGa and TMIn, has been operated from 1 atm to 10 atm. It was found that with increasing the reactor pressure, thermal conductivity of the gas increases, thus metalorganic precursors were fully decomposed before reaching the substrate. Therefore, reactor was redesigned and repaired. Then, we can successfully grow high In content InGaN at raised pressure. InGaN based-quantum wells grown at 6 atm shows emission wavelength longer than 120 nm compared with that grown at 1 atm.