Growth of high-quality thick InGaN by raised-pressure MOVPE

MOVPE反应器具有两个用于供应加压TMGa和TMIn的缓冲罐，已经在1大气压至10大气压下操作。结果发现，随着反应器压力的增加，气体的热导率增加，因此金属有机前驱物在到达衬底之前被完全分解。因此，对反应器进行了重新设计和修复。然后，我们可以成功地生长高In含量的InGaN在升高的压力。在6个大气压下生长的InGaN基威尔斯量子阱的发射波长比在1个大气压下生长的InGaN基量子阱的发射波长长120 nm。

MOVPE reactor having two buffer tanks for the supply of pressurized TMGa and TMIn, has been operated from 1 atm to 10 atm. It was found that with increasing the reactor pressure, thermal conductivity of the gas increases, thus metalorganic precursors were fully decomposed before reaching the substrate. Therefore, reactor was redesigned and repaired. Then, we can successfully grow high In content InGaN at raised pressure. InGaN based-quantum wells grown at 6 atm shows emission wavelength longer than 120 nm compared with that grown at 1 atm.