The investigation of heat and mass transfer phenomenon for the GaAs single crystal growth solid-fluid interface control.

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The objective of this study is to clarify heat and mass transfer phenomenon in the GaAs single crystal growth. In order to clarify complicated flow phenomenon of the melt, flow observation of the melt in the crucible which was simulated the growth device was carried out using the visualization experiment equipment. And, thermal hydraulics numerical calculation in the growth device at various crystal diameters and crystal length was conducted and the elucidation of the actual phenomenon was tried by verifying in comparison with single crystal growth experimental result. Flow characteristic of the melt was able to be clarified to some extent by this study. It was also able to be clarified a heat and flow characteristic in the equipment at the different crystal diameters and crystal length.