权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

The Investigation of the Gas Flow Analysis and the Measurement of the Thermal Radiative Properties for Thin Film Deposition in the Stacked Large Silicon Wafers

堆叠大硅片薄膜沉积的气流分析及热辐射性能测量研究

基本信息

批准号：
15560164
负责人：
KIKUTA Kazushige
金额：
$ 2.24万
依托单位：
HOKKAIDO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560164/
关键词：
CVD Silicon Wafer Gas Flow Visualization Thermal Radiative Properties Thin Film LPCVD Rarefied Gas

项目摘要

This investigation showed the flow characteristics of reactant gas on the silicon wafers in a vertical LPCVD (Low-Pressure Chemical Vapor Deposition) reactor by the flow visualization and the numerical simulation. The observation was made in a model reactor in a very low-pressure condition, which makes observation quite difficult because of tracer seeding. The CFD code FLUENT was used for the numerical simulation. The results of the visualization and the numerical simulation showed that the gas flow was quite viscous and it received large resistance force from the wafers and the supporting lodes. Regardless of the low-pressure condition, the flow can be treated as continuous system and can be simulated well by the CFD code based on Navier-Stokes equation. It shows that the most of the field appeared to be laminar. For the establishment of the uniform flow pattern, twin counter-flow nozzles were better than a single nozzle. The flow was free form stagnant flow or re-circulating flow so that it appears to be suited for the prevention of particle formations.On the other hand, there is seldom data on the thermal radiative properties of semiconductor silicon wafers with various thin films. It is important to know them for the accurate measurement of wafer temperature using radiative thermometer and the estimation of the film thickness at in-situ. We measured the spectral normal emissivity of silicon wafers with various films using FT-IR without changing the condition of a thin film at 600℃ and 900℃. The result showed that radiation characteristics greatly differ by film kind and film thickness. It seems to be able to the estimation of the thin film thickness in the process by measuring the infrared spectrum at in-situ using this property.

采用流动显示和数值模拟相结合的方法，研究了垂直LPCVD（Low-Pressure Chemical Vapor Deposition）反应器中反应气体在硅片表面的流动特性。观察是在一个模型反应器中在非常低的压力条件下进行的，这使得观察非常困难，因为示踪剂播种。采用CFD软件FLUENT进行数值模拟。可视化和数值模拟的结果表明，气体流动是相当粘滞的，它受到来自晶片和支撑块的大的阻力。无论低压条件如何，流动都可以被视为连续系统，并且可以通过基于Navier-Stokes方程的CFD代码来很好地模拟。它表明，大部分的领域似乎是层流。对于均匀流态的建立，双逆流喷嘴优于单喷嘴。流动是自由形式的停滞流或再循环流，使它似乎是适合于防止颗粒formation.On另一方面，很少有数据的半导体硅晶片的热辐射性能与各种薄膜。了解它们对于用辐射温度计精确测量晶片温度和在线估算薄膜厚度是非常重要的。在600℃和900℃下，在不改变薄膜条件的情况下，用傅里叶变换红外光谱仪测量了不同薄膜硅晶片的光谱法向发射率。结果表明，薄膜种类和薄膜厚度对辐射特性影响很大。利用这一特性，可以通过原位红外光谱的测量来估计薄膜的厚度。

项目成果

期刊论文数量（53）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

The heating characteristic analysis of the silicon wafers stacked in a heating furnace for the batch processing

批量加工加热炉中堆叠硅片的加热特性分析

DOI：
发表时间：
2005
期刊：
The Sixth KSME-JSME Thermal and Fluids Engineering Conference (CD-ROM)
影响因子：
0
作者：
T.Sasaki;K.Kikuta;T.Chikahisa;Y.Hishinuma;K.Morimitsu
通讯作者：
K.Morimitsu

菊田和重, 石川温士, 佐々木隆史, 菱沼孝夫, 近久武美, 宮田敏光, 山口天和: "各種成膜シリコンウエハの放射熱物性計測"日本機械学会2003年度年次大会講演論文集. III. 9-10 (2003)

Kazushige Kikuta、Atsushi Ishikawa、Takashi Sasaki、Takao Hishinuma、Takemi Chikahisa、Toshimitsu Miyata、Tenkazu Yamaguchi：“各种薄膜沉积硅片的辐射热性能的测量”日本机械工程师学会 2003 年年会论文集 III。 .9-10 (2003)

DOI：
发表时间：
期刊：
影响因子：
0
作者：
通讯作者：

Visualization and Numerical Simulation of Rarefied Gas Flow in Vertical Low-Pressure CVD Reactors for Thin Film Formation of Semiconductors

用于半导体薄膜形成的立式低压 CVD 反应器中稀薄气流的可视化和数值模拟

DOI：
发表时间：
2005
期刊：
Transaction of the Japan Society of Mechanical Engineers (Series B) Vol.71-704
影响因子：
0
作者：
T.Sasaki;N.Saito;K.Kikuta;T.Chikahisa;Y.Hishinuma;K.Morimitsu
通讯作者：
K.Morimitsu

The Study of Thermal Radiative Properties of Silicon Wafers with Various Thin Films by Temperature Changes

不同薄膜硅片温度变化热辐射特性研究