Surface characterization of iron silicides by energy tunable X-ray excited photoelectron spectroscopy

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Depth profiling of iron silicide films, crystals and homoepitaxial films was performed by X-ray photoelectron spectroscopy using energy tunable X-rays from synchrotron radiation. The analysis indicated that native silicon oxide layers with the thickness of about 1 nm were formed on the silicides. The chemical states in the homoepitaxial films depended on the substrate temperature during film growth. This means that the optimization of the substrate temperature is important to obtain homoepitaxial films with good quality.