Development of electron spin qubits using silicon quantum dots

这项工作的目的是研究物理学和开发基本技术，以实现量子信息器件，利用硅量子点中的电子自旋作为量子比特。我们提出了一种新的器件结构及其制造技术，用于光刻定义的硅量子点。我们成功地利用电子束光刻、反应离子蚀刻和氧化，在非掺杂的绝缘体上硅衬底上的金属-氧化物-半导体结构中制备了耦合量子点。然后，我们成功地观察到了量子点中的单电子状态和自旋相关的隧道现象。

The purpose of this work is to study physics and develop elemental technologies for realizing quantum information devices using electron spins in silicon quantum dots as qubits. We propose a novel device structure and its fabrication techniques for lithographically-defined silicon QDs. We successfully fabricated coupled QDs utilizing electron beam lithography, reactive ion etching, and oxidation, in a metal-oxide-semiconductor structure on a non-doped silicon-on-insulator substrate. We then succeeded in observing a single-electron regime in the QD and spin-related tunneling phenomena.