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Exciton effects for high purity nanostructured hexagonal boron nitride

Exciton effects for high purity nanostructured hexagonal boron nitride
高纯度纳米结构六方氮化硼的激子效应
批准号:
22651056
负责人:
WATANABE Kenji
金额:
$2.23万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Exploratory Research
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2011

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中文摘要
翻译
对六方氮化硼(HBN)单晶的激子发光特性进行了研究,发现220 nm能带不同于215 nm自陷态的激子发光带,利用机械剥离技术可以在氧化硅片上制备并识别出227 nm束缚激子发光带BN单层和双层膜,使用更薄的SiO_2和/或窄光滤光片可以看到均匀的BN单层。使用hBN作为石墨烯衬底,石墨烯的电导性能显著改善,迁移率比传统的SiO_2衬底器件高出近一个数量级。
英文摘要
Excitonic luminescence of hexagonal boron nitride(hBN) single-crystal was studied, and found that the origin of the 220 nm band is different from that of the 215 nm self-trapped and the 227 nm bound exciton luminous bands BN mono-and bilayers can be prepared and identified on top of an oxidized Si wafer using a mechanical exfoliation technique and the use of thinner SiO_2 and/or narrow optical filters makes it possible to see even BN monolayers.By using hBN for the substrate of graphene, the electrical conduction properties of the graphene improved significantly, and its mobility reached almost one-order higher than that of the conventional SiO_2 substrate device.
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会议论文
六方晶窒化ホウ素単結晶の光学特性とその応用
六方氮化硼单晶的光学性质及其应用
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [太宰 卓朗, 濵嵜 容丞, 安井 伸太郎, 谷山 智康, 伊藤 満, 渡邊賢司]
通讯作者: 渡邊賢司
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [谷口尚, 渡邊賢司, 横山壽一, A.Pierret, Da-Hong Wang, 荒井祐介, A. Pierret, 田中純一, 渡邊賢司]
通讯作者: 渡邊賢司
DOI: --
发表时间: 2010
期刊:
影响因子: --
作者: [T.Tayagaki, S.Fukatsu, Y.Kanemistu, Nobuo Kimizuka, K.Watanabe]
通讯作者: K.Watanabe
DOI: 10.1038/nmat2968
发表时间: 2011-04-01
期刊: NATURE MATERIALS
影响因子: 41.2
作者: [Xue, Jiamin, Sanchez-Yamagishi, Javier, Leroy, Brian J.]
通讯作者: Leroy, Brian J.
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