Research on interface stabilization of diamond junction for developing practical device applications

研究了用于高压工作的金刚石肖特基势垒二极管(SBD)的制作工艺。采用碳化钨作为SBD金属，在低于600K的温度范围内实现了器件的热稳定工作。SBD金属的后退火是稳定界面的有效方法，为了改善SBD的性能，探索了同时满足较高晶体质量和较厚金刚石膜生长的生长条件。因此，利用较高的微波功率密度，抑制衬底刻蚀是在高掺硼衬底上生长金刚石的关键。

Device fabrication procedure of diamond Schottky barrier diodes (SBD) for high voltage operation was investigated. By utilizing tungsten carbide as SBD metal, thermally stable device operation was obtained in the temperature range below 600K. Post annealing of SBD metals is found to be efficient for stabilizing the interface.For the purpose of improving SBD performance, growth condition that satisfies both higher crystalline quality and thicker diamond film growth was explored. Then suppression of substrate etching is crucial for diamond growth on highly boron doped substrate using higher microwave power density.