Study on low energy-loss diamond power diodes

研究了金刚石肖特基二极管（sbd）漏电流产生的原因。结果表明，导致漏电流增大的因素有几个，其中内因是金刚石的固态特性，内因是金刚石sdd的器件结构因素，外因是金刚石的晶体缺陷。其中，泄漏电流水平与肖特基势垒高度之间存在较强的相关性，这是由于局部低肖特基势垒高度的形成。由于金刚石的表面终止特性和金刚石的低介电常数，这一特性是金刚石的本质问题。针对晶体缺陷的影响，提出了金刚石sdd杀伤缺陷的无损检测方法。金刚石sdd的热稳定性是通过界面氧的解吸实现的。

Origin of inducing the leakage current of diamond Schottky diodes (SBDs) were investigated. It was found that there are several factors of leakage current increase, which are categorized into the essential factor coming from the solid-state properties of diamond, device structural factors of diamond SBDs, and the extrinsic factors of crystalline defects of diamond. Among those, strong correlation between the leakage current level and the Schottky barrier height was observed, that is due to the formation of the localized low Schottky barrier height. This feature is essential problem of diamond because the diamond SBD utilizes surface termination properties and diamond has low dielectric constant. As for the effect of crystalline defects, we proposed the non-destructive detection method of the killer defects of diamond SBDs. Thermal stability of diamond SBDs was found to occur by the desorption of the interface oxygen.