Fabrication of new structure transistors using III-V Semiconductors/High-k materials on Si substrates

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Growth of InAs/AlGaSb heterostructures by molecular beam epitaxy and the characterization of antimonide-based composite-channel InAs MOSFETs are reported. Antimonide-based compound semiconductors such as those of InAs combined with AlGaSb are candidates for high-speed and low-power digital applications. InAs/AlGaSb MOSFETs utilizing high-k (HfO2) gate insulator were fabricated using a Ni/Au ohmic metallization. Low contact resistance using Ni/Au ohmic metal and annealing in N2 for 60 seconds. The transconductance gm of 414 mS/mm was obtained for the MOSFET with gate length of 1um.