Development of the fabrication technology of next-generation polycrystalline silicon solar cells using rapid crystallization

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This research is regarding the formation of polycrystalline silicon films by flash lamp annealing (FLA), millisecond discharge from Xe lamps, of precursor amorphous silicon films formed on glass substrates for solar cell application. We aimed the establishment of a technology to suppress Si film peeling during FLA without using Cr adhesion layers, which is unfavorable for the realization of high-efficiency solar cells.We have found that the use of glass substrates coated with textured transparent conductive oxide films results in the formation of poly-Si films without Si film peeling. This also demonstrates the possibility of realizing superstrate-type solar cells by using flash-lamp-crystallized polycrystalline silicon films.