Fabrication of Si/InGaN hybrid solar cells

提出了P-Si/InGaN异质结结构用于制备太阳能电池，以实现电流匹配并克服富In InGaN中p型掺杂的困难。这种结构可以通过调整InGaN中的In成分和/或p-Si中的掺杂来将光吸收扩展到全太阳光谱。我们已经成功地用PECVD方法在p型InGaN上沉积了存款非晶Si来制造异质结。异质结显示出非常好的特性，显示出p-n结行为。实现了光伏特性。InGaN量子点结构也成功地实现了长波长吸收。

P-Si/InGaN heterojunction structures are proposed to fabricate solar cells to achieve both the current match and overcome the difficulty of p-type doping in In-rich InGaN. This structure can extend the optical absorption to the full solar spectrum by adjusting the In composition in InGaN and/or doping in the p-Si. We have successfully deposit amorphous Si on p-type InGaN by PECVD deposition to fabricate heterojunctions. The heterojunction indicated very good characteristics, showing the p-n junction behavior. The photovoltaic properties are achieved. InGaN quantum dots structures are also successfully achieved to realize long-wavelength absorption.