MEMS技術に基づく応力制御によるダイヤモンドのバンドエンジニアリング

本计画是利用我们所开发的金刚石微机电系统技术来调整金刚石的能带隙。在这一年里，我们制作了不同尺寸的单晶金刚石MEMS结构，如长50 - 160 μ m，宽10 μ m左右，厚500 - 4 μ m的悬臂梁和双夹梁。我们利用原子尺度的刻蚀方法对离子注入金刚石中的损伤进行了有效的刻蚀，并在10小时内将单晶金刚石悬臂梁的品质因数从10000提高到200000以上。我们还成功地在静电控制的金刚石弯曲，这是由共振频率测量和共振振幅控制证明。这些工作为下一步单晶金刚石的应变控制奠定了基础。

This proposal is to modulate the bandgap of diamond by using our developed diamond MEMS technology. In this year, we fabicated single-crystal diamond MEMS structures such as cantilevers and double-clamped beams with different dimensions of length from 50 to 160 um, width around 10um, and thickness from 500nm to 4um. We etched the ion-implantation induced damages in diamond by using an efficient atomic scale etching method and improved the quality factor of the single-crystal diamond cantilever from 10000 to over 200000 within 10 hrs. We also succeeded in the electrostatic control of the diamond bending, which was evidenced by the resonance frequency measurements and resonance amplitude control. These work forms the basis for next-stage of strain controlling in single-crystal diamond.