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Studies on low-cost and environmentally-benign carbon solar cell

Studies on low-cost and environmentally-benign carbon solar cell
低成本环保碳太阳能电池的研究
批准号:
09450010
负责人:
UMENO Masayoshi
金额:
$3.52万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1999

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中文摘要
翻译
非晶碳被吸引为一种环境开始和廉价的超晶硅太阳能电池。薄膜畸变碳(a-C)已使用不同沉积方法将Campor作为源材料储存在不同沉积方法中,例如离子束散射、幽门螺杆菌和脉冲激光沉积。该电影被提交给了各种标准的字符化技术,以订购并定制设备应用所需的结构和光电性能。已被调查的碳薄膜的沉积参数和退火温度对已被调查的影响。光学波段缺口增加了,增加了释放功率或降低了沉积温度,1 eV在最佳条件下获得了。这部电影放映了由磷酸盐注射的N型电影。您的位置:知道173>> D121> D122> D1 cm> D1-3> D1。对于由激光脉冲沉积物沉积的电影,光学带间隙显示为0.8 eV,当使用图形目标显示为0.6 eV光学带间隙时。两种p-和n-类型的碳膜都被通过控制特定方法的保留参数或被吸收的。各种配置的太阳能电池,如n-C/p-Si、p-C/n-Si和n-C/p-C/p-Si,已经制造并研究了它们的光子响应特性。最高的效率是由n-C/p-C/p-Si的单元格配置产生的。对光电压特性的底层温度的影响也是调查的。
英文摘要
Amorphous carbon has attracted attention as an environmentally begin and cheap solar cell over amorphous silicon. Thin films amorphous carbon (a-C) have been deposited using camphor as a source materials by different deposition methods, such as ion beam sputtering, pyrolysis and pulsed laser deposition. The films are subjected to various standard characterization techniques in order to tailor the required structural and opto-electrical properties for device applications. The effects of deposition parameters and annealing temperatures on the properties of carbon thin films have been investigated. The optical band gap increased with increasing the sputtering power or decreasing the deposition temperature, and 1 eV has been obtained at the optimum conditions. The film showed n type by the phosphorous doping. The pyrolyzed film showed p type with the carrier concentration of 10ィイD121ィエD1 to 10ィイD122ィエD1 cmィイD1-3ィエD1. For the films deposited by laser pulse deposition, the optical band gap showed 0.8 eV, whereas that deposited using graphite target showed 0.6 eV optical band gap. Both p- and n- type of carbon films have been obtained either through controlling the reposition parameters of a particular method or by doping. Solar cells of various configurations, such as n-C/p-Si, p-C/n-Si and n-C/p-C/p-Si, have been fabricated and their photoresponse characteristics are studied. The highest efficiency has been obtained by the cell configuration of n-C/p-C/p-Si. Effects of substrate temperature on the photovoltaic properties are also investigated.
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会议论文
S. M. Mininuzzaman, K. M. Krishna, T. Soga, T. Jimbo and M. Umeno: "Raman spectra of ion beam sputtered amorphous carbon thin films deposited from camphoric carbon"Carbon. Vol. 38. 127-131 (2000)
S. M. Mininuzzaman、K. M. Krishna、T. Soga、T. Jimbo 和 M. Umeno:“从樟脑碳沉积的离子束溅射非晶碳薄膜的拉曼光谱”Carbon。
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T. Sharda, T. Soga, T. Jimbo and M. Umeno: "Bias enhanced growth of nanocrystalline diamond films by microwave plasma chemical vapor deposition"Diamond and Related Materials. (in press). (2000)
T. Sharda、T. Soga、T. Jimbo 和 M. Umeno:“通过微波等离子体化学气相沉积偏置增强纳米晶金刚石薄膜的生长”金刚石和相关材料。
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K. M. Krishna, T. Soga, K. Mukhopadhyay, M. Sharon and M. Umeno: "Photovoltaic solar cell from camphoric carbon, a natural source"Solar Energy Materials and Solar Cells. Vol. 48. 25-33 (1997)
K. M. Krishna、T. Soga、K. Mukhopadhyay、M. Sharon 和 M. Umeno:“来自天然来源樟脑碳的光伏太阳能电池”太阳能材料和太阳能电池。
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共 23 条
    Heteroepitaxy of GaAs and GaN on Si and their device applications
    Studies on high-efficiency and low-cost compound semiconductor/Si tandem solar cell
    • 批准号:
      06402064
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $16.38万
    • 财政年份:
      1994
    • 负责人:
      UMENO Masayoshi
    • 依托单位:
    Fabrication of high-performance and long lifetime GaAs-based laser on Si substrate
    • 批准号:
      06555013
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $11.52万
    • 财政年份:
      1994
    • 负责人:
      UMENO Masayoshi
    • 依托单位:
    Hybrid growth of Inp on Si and its application to optical devices
    • 批准号:
      60460121
    • 项目类别:
      Grant-in-Aid for General Scientific Research (B)
    • 资助金额:
      $4.48万
    • 财政年份:
      1985
    • 负责人:
      UMENO Masayoshi
    • 依托单位:
    海外基金