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Studies on low-cost and environmentally-benign carbon solar cell

低成本环保碳太阳能电池的研究

基本信息

批准号：
09450010
负责人：
UMENO Masayoshi
金额：
$ 3.52万
依托单位：
Nagoya Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450010/
关键词：
Carbon Solar cell Camphor Ion beam sputtering Laser pulse deposition Thermal CVD 熱CVD しょうのうレーザアブレーションスパッタ CVD ドーピングクスノキド-ピング

项目摘要

Amorphous carbon has attracted attention as an environmentally begin and cheap solar cell over amorphous silicon. Thin films amorphous carbon (a-C) have been deposited using camphor as a source materials by different deposition methods, such as ion beam sputtering, pyrolysis and pulsed laser deposition. The films are subjected to various standard characterization techniques in order to tailor the required structural and opto-electrical properties for device applications. The effects of deposition parameters and annealing temperatures on the properties of carbon thin films have been investigated. The optical band gap increased with increasing the sputtering power or decreasing the deposition temperature, and 1 eV has been obtained at the optimum conditions. The film showed n type by the phosphorous doping. The pyrolyzed film showed p type with the carrier concentration of 10ィイD121ィエD1 to 10ィイD122ィエD1 cmィイD1-3ィエD1. For the films deposited by laser pulse deposition, the optical band gap showed 0.8 eV, whereas that deposited using graphite target showed 0.6 eV optical band gap. Both p- and n- type of carbon films have been obtained either through controlling the reposition parameters of a particular method or by doping. Solar cells of various configurations, such as n-C/p-Si, p-C/n-Si and n-C/p-C/p-Si, have been fabricated and their photoresponse characteristics are studied. The highest efficiency has been obtained by the cell configuration of n-C/p-C/p-Si. Effects of substrate temperature on the photovoltaic properties are also investigated.

与非晶硅相比，非晶碳作为一种环保开始和廉价的太阳能电池引起了人们的关注。以樟脑为原料，采用离子束溅射、热解和脉冲激光沉积等方法制备了非晶碳（a-C）薄膜。这些薄膜经过各种标准的表征技术，以定制设备应用所需的结构和光电性能。研究了沉积参数和退火温度对碳薄膜性能的影响。光学带隙随溅射功率的增大或沉积温度的降低而增大，在最佳条件下，光学带隙为1 eV。通过磷掺杂，薄膜呈现n型。当载流子浓度为10 μ mol/L D121 μ mol/L D1 ~ 10 μ mol/L D122 μ mol/L D1 cm-1 -3 μ mol/L D1时，热解膜为p型。对于通过激光脉冲沉积的膜，光学带隙显示0.8eV，而使用石墨靶沉积的膜显示0.6eV光学带隙。无论是通过控制特定方法的复位参数，还是通过掺杂，都可以得到p型和n型碳膜。制备了不同结构的n-C/p-Si、p-C/n-Si和n-C/p-C/p-Si太阳电池，并研究了它们的光响应特性。采用n-C/p-C/p-Si的电池结构获得了最高的效率。衬底温度对光伏特性的影响也进行了研究。